Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 81 120 W 55 Search Results

    TRANSISTOR 81 120 W 55 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 81 120 W 55 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2735GN-100

    Abstract: transistor 3,5Ghz, power 100w s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ power transistor gan s-band
    Text: 2735GN-100 Rev 1 2735GN – 100M 100 Watts - 60 Volts, 300 s, 10% 2700 - 3500 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2735GN-100 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 100 Watts of pulsed RF


    Original     		PDF 2735GN-100 2735GN 55-QP transistor 3,5Ghz, power 100w s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ power transistor gan s-band

    Untitled

    Abstract: No abstract text available
    Text: 2730GN-100L Rev 1 2730GN – 100L 100 Watts, 3 mS , 30%, +55 Volts 2700 - 3000 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2730GN-100M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 100 Watts of pulsed RF


    Original     		PDF 2730GN-100L 2730GN 55-QP 2730GN-100M 55-QP

    circuit diagram board

    Abstract: 55-QP
    Text: 2729GN-150 Rev 1 2729GN – 150 150 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2729GN-150 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 13dB gain, 150 Watts of pulsed RF


    Original     		PDF 2729GN-150 2729GN 55-QP circuit diagram board

    Untitled

    Abstract: No abstract text available
    Text: 2729GN-150 Rev 1 2729GN – 150 150 Watts - 60 Volts, 100 µs, 10% Radar 2700 - 2900 MHz CASE OUTLINE 55-QP Common Source GENERAL DESCRIPTION The 2729GN-150 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 13dB gain, 150 Watts of pulsed RF


    Original     		PDF 2729GN-150 2729GN 55-QP 55-QP

    2731GN

    Abstract: No abstract text available
    Text: 2731GN-110M Rev 1 2731GN – 110M 110 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-110M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 110 Watts of pulsed RF


    Original     		PDF 2731GN-110M 2731GN 55-QP 2731GN

    SOT 23 HHB

    Abstract: No abstract text available
    Text: Low Cost, High Speed, Rail-to-Rail, Output Op Amps ADA4851-1/ADA4851-2/ADA4851-4 PIN CONFIGURATIONS High speed 130 MHz, −3 dB bandwidth 375 V/ s slew rate 55 ns settling time to 0.1% Excellent video specifications 0.1 dB flatness: 11 MHz Differential gain: 0.08%


    Original     		PDF ADA4851-1/ADA4851-2/ADA4851-4 OT-23, 14-lead AEC-Q100 ADA4851-2W ADA4851-4W) ADA4851-1 OT-23) SOT 23 HHB

    PSMN030-150P

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN030-150P SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 150 V ID = 55.5 A


    Original     		PDF PSMN030-150P PSMN030-150P O220AB)

    SOT 23 HHB

    Abstract: ADA4851-1 ADA4851-2 ADA4851-4 AEC-Q100 RU-14 ADA4851
    Text: Low Cost, High Speed, Rail-to-Rail, Output Op Amps ADA4851-1/ADA4851-2/ADA4851-4 PIN CONFIGURATIONS High speed 130 MHz, −3 dB bandwidth 375 V/ s slew rate 55 ns settling time to 0.1% Excellent video specifications 0.1 dB flatness: 11 MHz Differential gain: 0.08%


    Original     		PDF ADA4851-1/ADA4851-2/ADA4851-4 OT-23, 14-lead AEC-Q100 ADA4851-2W ADA4851-4W) ADA4851-1 SOT 23 HHB ADA4851-1 ADA4851-2 ADA4851-4 RU-14 ADA4851

    2SD1616A

    Abstract: No abstract text available
    Text: 2SD1616A 2SD1616A TRANSISTOR NPN TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 1 A Collector-base voltage 120 V V(BR)CBO: Operating and storage junction temperature range 3. BSAE 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SD1616A 100mA 100mA, PW350 2SD1616A

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors N-channel logic level Product specification TrenchMOS(TM) FEATURES transistor SYMBOL PSMN005-55B;


    Original     		PDF PSMN005-55B; PSMN005-55P 603502/300/04/pp12

    150B

    Abstract: PSMN030-150B
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN030-150B SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 150 V ID = 55.5 A


    Original     		PDF PSMN030-150B PSMN030-150B OT404 150B

    SMD marking code 55B

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors N-channel logic level Product specification TrenchMOS(TM) FEATURES transistor SYMBOL PSMN005-55B;


    Original     		PDF PSMN005-55B; PSMN005-55P PSMN005-55P SMD marking code 55B

    13MM

    Abstract: PH1819-4N v6 4n diode
    Text: an AMP comoanv Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz 4W PH1819-4N v2.00 Features ,975 .‘24 77, NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point


    Original     		PDF PH1819-4N rl850 300mA 13MM PH1819-4N v6 4n diode

    balun transformer 75 ohm

    Abstract: 300 ohms balun b 595 transistor CRC10 UF281OOH
    Text: RF MOSFET Power Transistor, iOOW, 28V 100 - 500 MHz UF281 OOH Features N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Input Capacitance c IS


    Original     		PDF UF281 3050152-W balun transformer 75 ohm 300 ohms balun b 595 transistor CRC10 UF281OOH

    ADA4851-1YRJZ-R2

    Abstract: HSB SOT-23-6 ADA4851-1 ADA4851-2 ADA4851-4 RU-14 HSB MSOP8
    Text: Low Cost, High Speed, Rail-to-Rail Output Op Amps ADA4851-1/ADA4851-2/ADA4851-4 PIN CONFIGURATIONS High speed 130 MHz, −3 dB bandwidth 375 V/ s slew rate 55 ns settling time to 0.1% Excellent video specifications 0.1 dB flatness: 11 MHz Differential gain: 0.08%


    Original     		PDF ADA4851-1/ADA4851-2/ADA4851-4 OT-23-6, TSSOP-14, ADA4851-1 ADA4851-1 14-Lead RU-14 ADA4851-1YRJZ-R2 HSB SOT-23-6 ADA4851-2 ADA4851-4 RU-14 HSB MSOP8

    SEMCO

    Abstract: DU1230S SEMCO CL
    Text: = - =- an AMP company = = RF MOSFET Power Transistor, 3OW, 12V 2 - 175 MHz DUI 230s Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices


    Original     		PDF -55to DU123OS SEMCO DU1230S SEMCO CL

    HSB MSOP-8

    Abstract: No abstract text available
    Text: Low Cost, High Speed, Rail-to-Rail Output Op Amps ADA4851-1/ADA4851-2/ADA4851-4 PIN CONFIGURATIONS High speed 130 MHz, −3 dB bandwidth 375 V/µs slew rate 55 ns settling time to 0.1% Excellent video specifications 0.1 dB flatness: 11 MHz Differential gain: 0.08%


    Original     		PDF ADA4851-1/ADA4851-2/ADA4851-4 OT-23-6, TSSOP-14, ADA4851-1 ADA4851-1, OT-23 ADA4851-2 14-Lead HSB MSOP-8

    TRANSISTOR BV 32

    Abstract: Bv 42 transistor PH1617-30 K010 G177
    Text: an AMP ZE comDanv r = Wireless Bipolar Power Transistor, 1.6 - 1.7 GHz 30W PHI 617-30 Features l l l l l Designed for Linear Amplifier Applications -30 dBc Typ 3rd IMD at 30 Watts PEP Common Emitter Class AB Operation Internal Input Impedance Matching Diffused Emitter Ballasting


    Original     		PDF

    ADA4851-1

    Abstract: ADA4851-2 ADA4851-4 RU-14
    Text: Low Cost, High Speed, Rail-to-Rail, Output Op Amps ADA4851-1/ADA4851-2/ADA4851-4 PIN CONFIGURATIONS High speed 130 MHz, −3 dB bandwidth 375 V/ s slew rate 55 ns settling time to 0.1% Excellent video specifications 0.1 dB flatness: 11 MHz Differential gain: 0.08%


    Original     		PDF ADA4851-1/ADA4851-2/ADA4851-4 OT-23, 14-lead ADA4851-1 RU-14 ADA4851-1 ADA4851-2 ADA4851-4 RU-14

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


    Original     		PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD

    T35 diode

    Abstract: power diode T35-4 diode T35 -4-D6 T35-4 diode
    Text: Afifacm w an A M P com pany Wireless Bipolar Power Transistor, 35W 850 - 960 MHz PH0810-35 V2.00 Features • • • • • • .975 2 4 .7 7 .725 _ (18,42) D esigned for L inear A m plifier A pplications Class AB: -30dBc Typ 3rd IMD at 15 W atts PEP


    OCR Scan     		PDF -30dBc PH0810-35 1N4245 10T/ND. PH0810-35 T35 diode power diode T35-4 diode T35 -4-D6 T35-4 diode

    GP 836 DIODE

    Abstract: PH0810-4 ATC 1084 ic atc 1084 Transistor 933 atc 17-18 ATC 1084 020 diode 1776 B diode gp 421 TRANSISTOR D 1765
    Text: VM &CO M m an A M P com pany Wireless Bipolar Power Transistor, 4W 850 - 960 MHz PH0810-4 Features • • • • • • • .725 _ 18.42 NPN Silicon Microwave Pow er T ran sistor D esigned for Linear Am plifier A pplications C lass AB: -30dBc Typ 3rd IMD at 4 Watts PEP


    OCR Scan     		PDF -30dBc PH0810-4 1N4245) PH0810-4 10T/NO. GP 836 DIODE ATC 1084 ic atc 1084 Transistor 933 atc 17-18 ATC 1084 020 diode 1776 B diode gp 421 TRANSISTOR D 1765

    93C24

    Abstract: No abstract text available
    Text: an A M P com pany Wireless Bipolar Power Transistor, 4W 1.6 -1.7 GHz Features • • • • • • • • Symbol Rating '♦ 60 V VCES 60 V Emitter-Base Voltage V EBO 3.0 V 'c 0.7 A 19.5 W ir ' ! d LH] T 1LR ii LMi r - L H lU •HJ' 'f K l BA S i G/B


    OCR Scan     		PDF PH1617-4N 93C24

    TRANSISTOR 3FT 81

    Abstract: T20 64 diode transistor 81 110 w 63 transistor 9163
    Text: an A M P com pany Wireless Bipolar Power Transistor, 2W 1.6-1 .7 GHz PH1617-2 Features • • • • • • Designed for Linear Amplifier Applications Class AB: -33 dBc 'I’yp 3rd 1MD at 2 Watts PKP Class A: +44 dBm Typ 3rd Order Intercept Point Common Emitter Configuration


    OCR Scan     		PDF PH1617-2 TRANSISTOR 3FT 81 T20 64 diode transistor 81 110 w 63 transistor 9163