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    TRANSISTOR 81 110 W 85 Search Results

    TRANSISTOR 81 110 W 85 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 81 110 W 85 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT 23 HHB

    Abstract: ADA4851-1 ADA4851-4 RU-14
    Text: Low Cost, High Speed, Rail-to-Rail Output Op Amps ADA4851-1/ADA4851-4 PIN CONFIGURATIONS High speed 130 MHz, −3 dB bandwidth 375 V/µs slew rate 85 ns settling time to 0.1% Excellent video specifications 0.1 dB flatness: 14 MHz Differential gain: 0.04% Differential phase: 0.06°


    Original     		PDF ADA4851-1/ADA4851-4 OT-23-6 TSSOP-14 ADA4851-1 ADA4851-1, OT-23 OT-23) 14-Lead SOT 23 HHB ADA4851-1 ADA4851-4 RU-14

    13MM

    Abstract: PH1819-4N v6 4n diode
    Text: an AMP comoanv Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz 4W PH1819-4N v2.00 Features ,975 .‘24 77, NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point


    Original     		PDF PH1819-4N rl850 300mA 13MM PH1819-4N v6 4n diode

    Ex-92

    Abstract: vegaswing 83 vegator Burgess Ex VIB41 VIB51 VIB52X PTB Ex-92.C.2141 VIB52 0/PTB Ex-92.C.2141
    Text: Level and Pressure Product Information Vibrating level switches Contents Contents 1 Product description 1.1 1.2 2 Function and application 2.1 2.2 3 Vibrating level switches overview . 7


    Original     		PDF

    philips ferroxcube 4c6

    Abstract: Philips Application Note ECO6907 Design of H.F. Wideband Power Transformers ferroxcube 4C6 toroid core philips toroid 4c6 ECO6907 4C6 toroid NCO8602 4c6 philips 14 x 9 x 5mm ECO7703
    Text: APPLICATION NOTE A wideband power amplifier 25 − 110 MHz with the MOS transistor BLF245 NCO8602 Philips Semiconductors A wideband power amplifier (25 − 110 MHz) with the MOS transistor BLF245 CONTENTS 1 SUMMARY 2 INTRODUCTION 3 DESIGN OF THE AMPLIFIER


    Original     		PDF BLF245 NCO8602 SCA57 philips ferroxcube 4c6 Philips Application Note ECO6907 Design of H.F. Wideband Power Transformers ferroxcube 4C6 toroid core philips toroid 4c6 ECO6907 4C6 toroid NCO8602 4c6 philips 14 x 9 x 5mm ECO7703

    sot446

    Abstract: LWE2010S SC15 SOT446A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LWE2010S NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor


    Original     		PDF LWE2010S SCA53 127147/00/02/pp12 sot446 LWE2010S SC15 SOT446A

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


    Original     		PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD

    NDL2405

    Abstract: No abstract text available
    Text: NDL SERIES Isolated 2W Wide Input Single Output DC/DC Converters FEATURES n RoHS compliant n 2:1 wide range voltage input n Continuous short circuit protection with current foldback n Operating temperature range -40ºC to 85ºC n 0.75% regulation n 1kVDC Isolation


    Original     		PDF NDL0505SC NDL0509SC NDL0512SC NDL0515SC NDL1205SC NDL1209SC NDL1212SC NDL1215SC NDL2405SC NDL2409SC NDL2405

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    Untitled

    Abstract: No abstract text available
    Text: NDL Series www.murata-ps.com Isolated 2W Wide Input Single Output DC/DC Converters FEATURES n RoHS compliant n 2:1 wide range voltage input n Continuous short circuit protection with current foldback n Operating temperature range -40ºC to 85ºC n 0.75% regulation


    Original     		PDF NDL0505SC NDL0509SC NDL0512SC NDL0515SC NDL1205SC NDL1209SC NDL1212SC NDL1215SC NDL2405SC NDL2409SC

    kdc_ndl

    Abstract: NDL2405SC 25V Electrolytic capacitor
    Text: NDL Series www.murata-ps.com Isolated 2W Wide Input Single Output DC/DC Converters FEATURES „ RoHS compliant „ 2:1 wide range voltage input „ Continuous short circuit protection with current foldback „ Operating temperature range -40ºC to 85ºC „


    Original     		PDF NDL0505SC NDL0509SC NDL0512SC NDL0515SC NDL1205SC NDL1209SC NDL1212SC NDL1215SC NDL2405SC NDL2409SC kdc_ndl 25V Electrolytic capacitor

    Untitled

    Abstract: No abstract text available
    Text: NDL Series www.murata-ps.com Isolated 2W Wide Input Single Output DC/DC Converters FEATURES n RoHS compliant n 2:1 wide range voltage input n Continuous short circuit protection with current foldback n Operating temperature range -40ºC to 85ºC n 0.75% regulation


    Original     		PDF NDL0505SC NDL0509SC NDL0512SC NDL0515SC NDL1205SC NDL1209SC NDL1212SC NDL1215SC NDL2405SC NDL2409SC

    NDL2405SC

    Abstract: ndl1212sc NDL2412SC NDL2415sc NDL0505SC NDL1205SC cs 1694 NDL1215SC NDL 020
    Text: NDL Series www.murata-ps.com Isolated 2W Wide Input Single Output DC/DC Converters FEATURES RoHS compliant 2:1 wide range voltage input Continuous short circuit protection with current foldback Operating temperature range -40ºC to 85ºC 0.75% regulation 1kVDC Isolation


    Original     		PDF NDL0505SC NDL0509SC NDL0512SC NDL0515SC NDL1205SC NDL1209SC NDL1212SC NDL1215SC NDL2405SC NDL2409SC NDL2405SC ndl1212sc NDL2412SC NDL2415sc NDL0505SC NDL1205SC cs 1694 NDL1215SC NDL 020

    NDL1205SC

    Abstract: NDL2405SC NDL1212SC NDL2412SC dielectric test standard A 1908 transistor NDL0505SC NDL1215SC 8066 transistor
    Text: NDL Series Isolated 2W Wide Input Single Output DC/DC Converters FEATURES n RoHS compliant n 2:1 wide range voltage input n Continuous short circuit protection with current foldback n Operating temperature range -40ºC to 85ºC n 0.75% regulation n 1kVDC Isolation


    Original     		PDF NDL0505SC NDL0509SC NDL0512SC NDL0515SC NDL1205SC NDL1209SC NDL1212SC NDL1215SC NDL2405SC NDL2409SC NDL1205SC NDL2405SC NDL1212SC NDL2412SC dielectric test standard A 1908 transistor NDL0505SC NDL1215SC 8066 transistor

    PH0810-15

    Abstract: No abstract text available
    Text: m an A M P com pany Wireless Bipolar Power Transistor, 15W 850 - 960 MHz PH0810-15 V2.00 .975 <2 4 .77 " Features • • • • • .725 <18.42)"" D esigned for l.i n e a r A m plifier A pplications Class AB: -30dBc Typ 3rd 1MD at 15 W atts PHP C o m m o n K m itter C onfiguration


    OCR Scan     		PDF -30dBc PH0810-15 PH0810-15 10T/NO. 1N4245)

    GP 836 DIODE

    Abstract: PH0810-4 ATC 1084 ic atc 1084 Transistor 933 atc 17-18 ATC 1084 020 diode 1776 B diode gp 421 TRANSISTOR D 1765
    Text: VM &CO M m an A M P com pany Wireless Bipolar Power Transistor, 4W 850 - 960 MHz PH0810-4 Features • • • • • • • .725 _ 18.42 NPN Silicon Microwave Pow er T ran sistor D esigned for Linear Am plifier A pplications C lass AB: -30dBc Typ 3rd IMD at 4 Watts PEP


    OCR Scan     		PDF -30dBc PH0810-4 1N4245) PH0810-4 10T/NO. GP 836 DIODE ATC 1084 ic atc 1084 Transistor 933 atc 17-18 ATC 1084 020 diode 1776 B diode gp 421 TRANSISTOR D 1765

    400 watt hf mosfet

    Abstract: 200 watt hf mosfet LF40100M "RF MOSFET" VDD400
    Text: an A M P company RF MOSFET Power Transistor, 100W, 40V 500 -1000 MHz LF40100M V2.00 Features • • • • Gold Metallized • Common Source Configuration Input Matched • Push-Pull Resfet Structure • Applications Lower Capacitances for Broadband Linear Operation


    OCR Scan     		PDF LF40100M 120BIAS LF401Ã 45E05 400 watt hf mosfet 200 watt hf mosfet "RF MOSFET" VDD400

    AX1209

    Abstract: LF40100M LF40100
    Text: A fa tjm m an A M P com pany RF MOSFET Power Transistor, 100W, 40V 500 -1000 MHz Features r.i Gold Metallized • Com m on Source Configuration Input Matched • Push-Pull Resfet Structure • Applications Broadband Linear O peration Lower Capacitances for


    OCR Scan     		PDF LF40100M AX1209 LF40100M LF40100

    NE24318

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by


    OCR Scan     		PDF NE243 NE24300 NE243187 NE243188 NE243287 NE243288 NE243499 IS12I NE24318

    NE24300

    Abstract: NE243187 transistor 81 110 w 63 NE243287 NE243188 NE243 NE243288 transistor 81 110 w 85 NE243499 NE24318
    Text: N E C / SbE D C A L IF O R N IA b*4274m 00D2371 31b «NECC H " '3 3 > - 0 S NEC NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is designed for oscillator


    OCR Scan     		PDF b4E7414 00D2371 NE243 NE24300 NE243187 NE243188 NE243287 NE243288 transistor 81 110 w 63 transistor 81 110 w 85 NE243499 NE24318

    NE243187

    Abstract: NE243188
    Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by NEC's gold, platinum and titanium metallization system. The


    OCR Scan     		PDF NE243 NE24300 NE243187 NE243188 NE243287 NE243288 NE243499

    transistor K 1413

    Abstract: 5607 transistor E243287 chip die npn transistor NE243287
    Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH O SCILLATO R POW ER O UTPUT: The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by NEC's gold, platinum and titanium metallization system. The


    OCR Scan     		PDF NE243 NE24300 transistor K 1413 5607 transistor E243287 chip die npn transistor NE243287

    yig tuned oscillator

    Abstract: transistor 81 110 w 63 yto oscillator om02-06
    Text: an A M P com pany YIG Tuned Oscillators 2 - 20 GHz MLYO 0000 Series V3.00 Features • • • • • Multioctave Tuning Ranges Miniature and Cube Packages High Linearity High Stability Low Phase Noise Description The YIG Tuned Oscillator YTO is a type of tuned oscil­


    OCR Scan     		PDF

    transistor 81 110 w 63

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor ‘ European Part Number 1C = 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz. • • • •


    OCR Scan     		PDF MRF581 transistor 81 110 w 63