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    TRANSISTOR 80 GHZ Search Results

    TRANSISTOR 80 GHZ Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 80 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3 pin transistor 10 amp

    Abstract: Radar TRANSISTOR J13 5 pin transistor 3 amp PH1214-80M power transistor 13 w 12 transistor
    Text: Radar Pulsed Power Transistor 80 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-80M PH1214-80M Radar Pulsed Power Transistor - 80 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor


    Original     		PDF PH1214-80M PH1214-80M 3 pin transistor 10 amp Radar TRANSISTOR J13 5 pin transistor 3 amp power transistor 13 w 12 transistor

    UMIL80

    Abstract: No abstract text available
    Text: UMIL 80 80 Watts, 28 Volts, Class AB Defcom 200 - 500 MHz GENERAL DESCRIPTION CASE OUTLINE The UMIL80 is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 200-500 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused


    Original     		PDF UMIL80 150oC 200oC UMIL80

    BFG194

    Abstract: VPS05163
    Text: BFG 194 PNP Silicon RF Transistor  For low distortion broadband amplifiers in 4 antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05163 BFG194 OT-223 Oct-27-1999 BFG194 VPS05163

    BF 194 transistor

    Abstract: VPS05178 BFP194
    Text: BFP 194 PNP Silicon RF Transistor 3  For low distortion broadband amplifier in antenna and telecommunications systems up 4 to 1.5 GHz at collector currents from 20 mA to 80 mA 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05178 OT-143 900MHz Oct-12-1999 BF 194 transistor VPS05178 BFP194

    Untitled

    Abstract: No abstract text available
    Text: BIPOLARICS INC. Part Number BPT23B01-23P SILICON MICROWAVE POWER TRANSISTOR Package 23: 0.230" 2 Lead Pill FEATURES: • P = 1 W @ 2.3 GHz • High Gain out GPE = 8.0 dB @ 2.3 GHz • High Gain Bandwidth Product ft = 6.5 GHz @ IC = 80 mA • High Reliability


    Original     		PDF BPT23B01-23P BPT23B01-23P

    BPT23B01-23

    Abstract: No abstract text available
    Text: BIPOLARICS INC. Part Number BPT23B01-23 SILICON MICROWAVE POWER TRANSISTOR Package 23: 0.230" 2 Lead Flange FEATURES: • P = 1 W @ 2.3 GHz • High Gain out GPE = 8.0 dB @ 2.3 GHz • High Gain Bandwidth Product ft = 6.5 GHz @ IC = 80 mA • High Reliability


    Original     		PDF BPT23B01-23 BPT23B01-23

    Untitled

    Abstract: No abstract text available
    Text: BIPOLARICS INC. Part Number BPT30B01-23P SILICON MICROWAVE POWER TRANSISTOR Package 23: 0.230" 2 Lead Pill FEATURES: • P = 1 W @ 3.0 GHz • High Gain out GPE = 8.0 dB @ 3.0 GHz • High Gain Bandwidth Product ft = 6.5 GHz @ IC = 80 mA • High Reliability


    Original     		PDF BPT30B01-23P BPT30B01-23P

    BPT30B01-23

    Abstract: No abstract text available
    Text: BIPOLARICS INC. Part Number BPT30B01-23 SILICON MICROWAVE POWER TRANSISTOR Package 23: 0.230" 2 Lead Flange FEATURES: • P = 1 W @ 3.0 GHz • High Gain out GPE = 8.0 dB @ 3.0 GHz • High Gain Bandwidth Product ft = 6.5 GHz @ IC = 80 mA • High Reliability


    Original     		PDF BPT30B01-23 BPT30B01-23

    Untitled

    Abstract: No abstract text available
    Text: BFP196 NPN Silicon RF Transistor 3  For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2  Power amplifier for DECT and PCN systems  fT = 7.5 GHz 1 VPS05178


    Original     		PDF BFP196 VPS05178 OT143

    Untitled

    Abstract: No abstract text available
    Text: BFP196 NPN Silicon RF Transistor 3  For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2  Power amplifier for DECT and PCN systems  fT = 7.5 GHz 1 VPS05178


    Original     		PDF BFP196 VPS05178 OT143

    BFG196

    Abstract: BFG196 equivalent VPS05163
    Text: BFG196 NPN Silicon RF Transistor  For low noise, low distortion broadband 4 amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 3  Power amplifier for DECT and PCN Systems 2  fT = 7.5 GHz 1 VPS05163


    Original     		PDF BFG196 VPS05163 OT223 curr00MHz Jun-27-2001 BFG196 BFG196 equivalent VPS05163

    BFP196

    Abstract: VPS05178
    Text: BFP196 NPN Silicon RF Transistor 3  For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2  Power amplifier for DECT and PCN systems  fT = 7.5 GHz 1 VPS05178


    Original     		PDF BFP196 VPS05178 OT143 900MHz Jun-22-2001 BFP196 VPS05178

    Untitled

    Abstract: No abstract text available
    Text: BFG196 NPN Silicon RF Transistor  For low noise, low distortion broadband 4 amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 3  Power amplifier for DECT and PCN Systems 2  fT = 7.5 GHz 1 VPS05163


    Original     		PDF BFG196 VPS05163 BFG196 OT223

    BMT0912B80-40

    Abstract: amplifier TRANSISTOR 12 GHZ transistor military
    Text: BIPOLARICS INC. Part Number BMT0912B80-40 SILICON MICROWAVE POWER TRANSISTOR Package 40: 0.400” x 0.400” 2 Lead Flange FEATURES: • P = 80 W @ 0.9 - 1.2 GHz • High Gain out GPE = 7.5 dB to 8.2 dB • High Gain Bandwidth Product ft = 6.5 GHz @ IC = 4.6 A


    Original     		PDF BMT0912B80-40 BMT0912B80-40 amplifier TRANSISTOR 12 GHZ transistor military

    transistor bfp 196

    Abstract: transistor bf 196 VPS05178
    Text: BFP 196 NPN Silicon RF Transistor 3  For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2  Power amplifier for DECT and PCN systems  fT = 7.5 GHz 1 VPS05178


    Original     		PDF VPS05178 OT-143 900MHz Oct-12-1999 transistor bfp 196 transistor bf 196 VPS05178

    BFP196

    Abstract: No abstract text available
    Text: BFP196 NPN Silicon RF Transistor 3  For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2  Power amplifier for DECT and PCN systems  fT = 7.5 GHz 1 VPS05178


    Original     		PDF BFP196 VPS05178 OT143 BFP196

    Untitled

    Abstract: No abstract text available
    Text: BFG196 NPN Silicon RF Transistor  For low noise, low distortion broadband 4 amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 3  Power amplifier for DECT and PCN Systems 2  fT = 7.5 GHz 1 VPS05163


    Original     		PDF BFG196 VPS05163 BFG196 OT223

    BFP181R

    Abstract: No abstract text available
    Text: BFP196R NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz


    Original     		PDF BFP196R OT143R BFP181R

    029998

    Abstract: BFP196W BGA420 38128
    Text: BFP196W NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz


    Original     		PDF BFP196W OT343 029998 BFP196W BGA420 38128

    BFP196W

    Abstract: BGA420
    Text: BFP196W NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz


    Original     		PDF BFP196W OT343 BFP196W BGA420

    VCO 1.4 GHz

    Abstract: No abstract text available
    Text: PH3135-80M Radar Pulsed Power Transistor Preliminary 80 Watts, 3.10-3.50 GHz, 100 us Pulse, 10% Duty Features • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation New Power Dense Interdigitated Geometry


    OCR Scan     		PDF PH3135-80M SbM250S VCO 1.4 GHz

    73412

    Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
    Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7


    OCR Scan     		PDF NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318

    Untitled

    Abstract: No abstract text available
    Text: _ _ _ N AUER PHILIPS/DISCRETE _ ! i_ _ OLE I> • 0 8 0 0 1 3 0 AMPEREX, H IC K SVILLE 86D 0 1 80 8 D T-33-05 ^53131 00m04b b | BLX91CB SILICON PUNAR EPITAXIAL TRANSISTOR N-P-N silicon planar epitaxial transistor primarily designed fo r use in fast-switching wide-band video


    OCR Scan     		PDF T-33-05 00m04b BLX91CB OT-48/3. 7Z92365

    dm 0765

    Abstract: BFQ196 siemens DM 321 VCE0518I BFQ 244 cerec
    Text: SIEMENS BFQ 196 NPN Silicon RF Transistor Prelim inary Data • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA. 3 J • f t = 7.5 GHz F = 1.3 dB at 900 MHz


    OCR Scan     		PDF Q62702-F1348 fl235b05 00b7253 dm 0765 BFQ196 siemens DM 321 VCE0518I BFQ 244 cerec