TRANSISTOR 7K Search Results

TRANSISTOR 7K Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 7K Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
D1486 Abstract: 2SC4342 Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4342 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SC4342 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM	Original	2SC4342 2SC4342 O-126 D1486	PDF
D1485 Abstract: 2SA1720 Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SA1720 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM	Original	2SA1720 2SA1720 O-220 D1485	PDF
NEC 2sc4552 Abstract: 2SC4552 Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is	Original	2SC4552 2SC4552 NEC 2sc4552	PDF
D1316 Abstract: 2SA1744 Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1744 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at Low VCE(sat). This transistor is	Original	2SA1744 2SA1744 D1316	PDF
2SC4551 Abstract: No abstract text available Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4551 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is	Original	2SC4551 2SC4551	PDF
Mitsubishi M54564 Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p Text: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide	Original	A/20V 16P2Z 16pin 225mil 05MIN. 20pin 300mil 20P2N 20P2E Mitsubishi M54564 M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p	PDF
2SD2164 Abstract: No abstract text available Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2164 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2164 is a single power transistor developed especially PACKAGE DRAWING UNIT: mm for high hFE. This transistor is ideal for simplifying drive circuits and	Original	2SD2164 2SD2164	PDF
D1486 Abstract: No abstract text available Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2162 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and	Original	2SD2162 2SD2162 O-220 O-220) D1486	PDF
2SC4815 Abstract: No abstract text available Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4815 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4815 is a power transistor developed for high-speed switching and features low VCE sat and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators.	Original	2SC4815 2SC4815	PDF
2SA1843 Abstract: No abstract text available Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1843 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1843 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.	Original	2SA1843 2SA1843	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> 8-UNIT 400mA DARLIGNON TRANSISTOR ARRAY DESCRIPTION M54583WP is eight-circuit collector-current sink type Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated	Original	400mA M54583WP 400mA) M54583 Jul-2011 Jun-2011	PDF
M54523 Abstract: pnp 8 transistor array 18P4G 20P2N-A M54583 M54583FP M54583P 8 pin 4v power supply ic Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor	Original	M54583P/FP 400mA M54583P M54583FP M54583P 400mA) M54523 pnp 8 transistor array 18P4G 20P2N-A M54583 8 pin 4v power supply ic	PDF
M54583FP Abstract: pnp darlington array M54523 PNP DARLINGTON ARRAYS 18P4G 20P2N-A M54583 M54583P pnp 8 transistor array Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor	Original	M54583P/FP 400mA M54583P M54583FP M54583P 400mA) pnp darlington array M54523 PNP DARLINGTON ARRAYS 18P4G 20P2N-A M54583 pnp 8 transistor array	PDF

M54523 Abstract: M54583FP 18P4G 20P2N-A M54583 M54583P pnp 8 transistor array 8-channel PNP darlington array Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor	Original	M54583P/FP 400mA M54583P M54583FP M54583P 400mA) M54523 18P4G 20P2N-A M54583 pnp 8 transistor array 8-channel PNP darlington array	PDF
2SC4553 Abstract: No abstract text available Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4553 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low PACKAGE DRAWING UNIT: mm collector saturation voltage and features large current switching at a	Original	2SC4553 2SC4553	PDF
pnp darlington array Abstract: PNP DARLINGTON SINK DRIVER 500ma pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY darlington Mitsubishi M54585 darlington array M54587 20P2N-A M54587FP Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54587P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor	Original	M54587P/FP 500mA M54587P M54587FP pnp darlington array PNP DARLINGTON SINK DRIVER 500ma pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY darlington Mitsubishi M54585 darlington array M54587 20P2N-A	PDF
SMUN5211DW Abstract: Digital Transistor SMUN52XXDW SOT-363 marking 05 CHIP TRANSISTOR smun5235dw transistor marking 7D SMUN5214DW "two TRANSISTORs" sot-363 Text: SMUN52XXDW NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are	Original	SMUN52XXDW SMUN5211DW 22-Jun-2007 Digital Transistor SMUN52XXDW SOT-363 marking 05 CHIP TRANSISTOR smun5235dw transistor marking 7D SMUN5214DW "two TRANSISTORs" sot-363	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54561P 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54561P is seven-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform	Original	M54561P 300mA M54561P 300mA)	PDF
pnp DARLINGTON TRANSISTOR ARRAY Abstract: M54583FP nmos transistor symbol switching transistor M54585 DARLINGTON TRANSISTOR ARRAY Text: <TRANSISTOR ARRAY> M54583FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY SINK TYPE DESCRIPTION PIN CONFIGURATION M54583FP is eight-circuit collector-current sink type Darlington transistor arrays. The circuits are made of PNP and NPN NC transistors. Both the semiconductor integrated circuits perform	Original	M54583FP 400mA M54583FP 400mA) pnp DARLINGTON TRANSISTOR ARRAY nmos transistor symbol switching transistor M54585 DARLINGTON TRANSISTOR ARRAY	PDF
M54661P Abstract: 89COM M54661FP 8 pin 4v power supply ic pnp 8 transistor array Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54661P/FP 4-UNIT 80V/1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54661P and M54661FP are four-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor	Original	M54661P/FP M54661P M54661FP opera04 89COM 8 pin 4v power supply ic pnp 8 transistor array	PDF
PNP DARLINGTON SINK DRIVER 500ma Abstract: M54585 pnp 8 transistor array M54587 20P2N-A M54587FP M54587P 8-channel PNP darlington array Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54587P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor	Original	M54587P/FP 500mA M54587P M54587FP PNP DARLINGTON SINK DRIVER 500ma M54585 pnp 8 transistor array M54587 20P2N-A 8-channel PNP darlington array	PDF
8-unit darlington transistor array Abstract: No abstract text available Text: <TRANSISTOR ARRAY> M54583FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY SINK TYPE DESCRIPTION PIN CONFIGURATION M54583FP is eight-circuit collector-current sink type Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform	Original	M54583FP 400mA M54583FP 400mA) 20P2N-A 8-unit darlington transistor array	PDF
MJE2955 Abstract: 2N3645 bc557 BC307 BC212 Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu The facturer	OCR Scan	O-92SP O-237 O-220 O-928> iO051 MJE2955 2N3645 bc557 BC307 BC212	PDF

TRANSISTOR 7K Search Results

TRANSISTOR 7K Result Highlights (5)

TRANSISTOR 7K Datasheets Context Search

MN1280

D1486

D1485

NEC 2sc4552

D1316

2SC4551

Mitsubishi M54564

2SD2164

D1486

2SC4815

2SA1843

Untitled

M54523

M54583FP

M54523

2SC4553

pnp darlington array

SMUN5211DW

Untitled

pnp DARLINGTON TRANSISTOR ARRAY

M54661P

PNP DARLINGTON SINK DRIVER 500ma

8-unit darlington transistor array

MJE2955