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    TRANSISTOR 725 Search Results

    TRANSISTOR 725 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 725 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RS394

    Abstract: NPN Monolithic Transistor Pair "matched transistor" NPN Transistor Pair
    Text: Issued November 1985 J6193 Supermatched pairRS394 Stocknumber 295-725 A junction isolated ultra well matched monotholic NPN transistor pair. This device features an order of magnitude improvement in matching over available transistor pairs. In many applications the RS394 will


    Original     		PDF J6193 RS394 RS394 120dB 10Circuit NPN Monolithic Transistor Pair "matched transistor" NPN Transistor Pair

    BLF888

    Abstract: dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP
    Text: BLF888 UHF power LDMOS transistor Rev. 04 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


    Original     		PDF BLF888 BLF888 dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP

    Untitled

    Abstract: No abstract text available
    Text: BLF888 UHF power LDMOS transistor Rev. 03 — 11 February 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


    Original     		PDF BLF888 BLF888

    BUH51

    Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 UHC-400
    Text: ON Semiconductor BUH51 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS The BUH51 has an application specific state–of–art die designed for use in 50 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large


    Original     		PDF BUH51 BUH51 r14525 BUH51/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105 UHC-400

    J0266

    Abstract: J-0834 J1930 001aaj288
    Text: BLF871 UHF power LDMOS transistor Rev. 01 — 18 December 2008 Objective data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The


    Original     		PDF BLF871 BLF871 J0266 J-0834 J1930 001aaj288

    blf878

    Abstract: ez90 j4213 Bv 42 transistor J0314 Reference blf878
    Text: BLF878 UHF power LDMOS transistor Rev. 02 — 15 June 2009 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from


    Original     		PDF BLF878 BLF878 ez90 j4213 Bv 42 transistor J0314 Reference blf878

    BLF871

    Abstract: DVB-T transistor amplifier rogers 5880 uhf amplifier design Transistor TRANSISTOR GENERAL DIGITAL L6 of transistor C 4212 900 mhz av transmitter D2140
    Text: BLF871 UHF power LDMOS transistor Rev. 03 — 21 September 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The


    Original     		PDF BLF871 BLF871 DVB-T transistor amplifier rogers 5880 uhf amplifier design Transistor TRANSISTOR GENERAL DIGITAL L6 of transistor C 4212 900 mhz av transmitter D2140

    BUH51

    Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
    Text: ON Semiconductort BUH51 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS The BUH51 has an application specific state–of–art die designed for use in 50 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large


    Original     		PDF BUH51 BUH51 r14525 BUH51/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105

    BLF871

    Abstract: J1930
    Text: BLF871 UHF power LDMOS transistor Rev. 02 — 5 March 2009 Preliminary data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The


    Original     		PDF BLF871 BLF871 J1930

    Untitled

    Abstract: No abstract text available
    Text: BLF888 UHF power LDMOS transistor Rev. 5 — 21 January 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


    Original     		PDF BLF888

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductor BUH51 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS The BUH51 has an application specific state−of−art die designed for use in 50 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large


    Original     		PDF BUH51 BUH51

    j4213

    Abstract: blf878 rogers 5880 Bv 42 transistor J3125 h a 431 transistor Reference blf878 transistor w 431 PDF Datasheets 900 mhz av transmitter J0314
    Text: BLF878 UHF power LDMOS transistor Rev. 01 — 15 December 2008 Preliminary data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from


    Original     		PDF BLF878 BLF878 j4213 rogers 5880 Bv 42 transistor J3125 h a 431 transistor Reference blf878 transistor w 431 PDF Datasheets 900 mhz av transmitter J0314

    j3076

    Abstract: BLF888 Technical Specifications of DVB-T2 Transmitter J1455 DVB-T2 L33 TRANSISTOR LDMOS digital C4532X7R1E475MT020U RF35 J1378
    Text: BLF888 UHF power LDMOS transistor Rev. 5 — 21 January 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


    Original     		PDF BLF888 j3076 BLF888 Technical Specifications of DVB-T2 Transmitter J1455 DVB-T2 L33 TRANSISTOR LDMOS digital C4532X7R1E475MT020U RF35 J1378

    NPN Monolithic Transistor Pair

    Abstract: RS394 NPN Transistor Pair
    Text: Issued March 1997 232-2784 Data Pack J Supermatched pair RS394 Data Sheet RS stock number 295-725 A junction isolated ultra well matched monotholic NPN transistor pair. This device features an order of magnitude improvement in matching over available transistor pairs. In many applications the RS 394 will


    Original     		PDF RS394 NPN Monolithic Transistor Pair RS394 NPN Transistor Pair

    Untitled

    Abstract: No abstract text available
    Text: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The


    Original     		PDF BLF871; BLF871S BLF871 BLF871S

    NPN Monolithic Transistor Pair

    Abstract: RS394 ultra low noise NPN transistor TRANSISTOR noise figure measurements NPN Transistor Pair
    Text: Issued November 1985 006-193 Data Pack J Supermatched pair RS394 Data Sheet RS stock number 295-725 A junction isolated ultra well matched monotholic NPN transistor pair. This device features an order of magnitude improvement in matching over available transistor pairs. In many applications the RS 394 will


    Original     		PDF RS394 NPN Monolithic Transistor Pair RS394 ultra low noise NPN transistor TRANSISTOR noise figure measurements NPN Transistor Pair

    BLF871

    Abstract: 900 mhz av transmitter DVB-T transistor amplifier OFDM transmitter UHF rogers 5880 UHF/UHF/blf871
    Text: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The


    Original     		PDF BLF871; BLF871S BLF871 BLF871S 900 mhz av transmitter DVB-T transistor amplifier OFDM transmitter UHF rogers 5880 UHF/UHF/blf871

    2SC5006

    Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
    Text: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range


    Original     		PDF 2SC5006 2SC5006 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    ZO 107 MA

    Abstract: 341S
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low


    OCR Scan     		PDF 2SC5009 2SC5009 ZO 107 MA 341S

    TRANSISTOR 2SC 2581

    Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS


    OCR Scan     		PDF 2SC5009 2SC5009 TRANSISTOR 2SC 2581 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733

    J02017

    Abstract: J0201 440 transistor
    Text: 15E D § bBt.7254 GGfl?20S ñ | MOTOROLA SC MOTOROLA XSTRS/R F SEM3CONDUCTOR TECHNICAL DATA The RF Line J02017 NPN Silicon UHF Power Transistor The J0201 7 is an internally matched N P N silicon UHF power transistor. Its multicell design allows optimum heat dissipation and operating efficiency. A slotted-grid finger


    OCR Scan     		PDF J0201 J02017 J02017 440 transistor

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range


    OCR Scan     		PDF 2SC5006 2SC5006