K1150PG
Abstract: K1150Pg Opto Coupler opto coupler 4n35 datasheet Opto Coupler 4N33 darlington opto coupler opto coupler 4n35 purpose of opto coupler 4n35 4 channel triac opto x1 transistor K1150P
Text: Vishay Semiconductors Classification Chart for Opto Couplers General purpose 4N27/28 CTR>10% Standard 4N25/26 CTR>20% Transistor output 4N35–37 CTR>100% 6 Pin-Series Base n.c. TCDT1110 Transistor output CTR>50% High CTR 4N32/33 Darlington output CTR>500%
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4N27/28
4N25/26
TCDT1110
4N32/33
CNY74
MCT6H/62H
K827PH
K825P
K824P
K845P
K1150PG
K1150Pg Opto Coupler
opto coupler 4n35 datasheet
Opto Coupler 4N33
darlington opto coupler
opto coupler 4n35
purpose of opto coupler 4n35
4 channel triac opto
x1 transistor
K1150P
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2SD2600
Abstract: No abstract text available
Text: 2SD2600 Ordering number : EN8564 SANYO Semiconductors DATA SHEET 2SD2600 NPN Triple Diffused Planar Silicon Darlington Transistor Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features
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2SD2600
EN8564
2SD2600
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TA-1083
Abstract: 2SB1664
Text: 2SB1664 Ordering number : EN8528 SANYO Semiconductors DATA SHEET 2SB1664 PNP Epitaxial Planar Silicon Darlington Transistor Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features • •
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2SB1664
EN8528
TA-1083
2SB1664
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MARKING SSG SOT23
Abstract: E6327 Q67000-S063 SN7002 sot-23 Marking 7002
Text: SN 7002 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking SN 7002 60 V 0.19 A 5Ω SOT-23 sSG Type SN 7002 Ordering Code Q67000-S063 D Tape and Reel Information
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OT-23
Q67000-S063
E6327
MARKING SSG SOT23
E6327
Q67000-S063
SN7002
sot-23 Marking 7002
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MARKING SSG SOT23
Abstract: 7002 MARKING 7002 SSG 23 TRANSISTOR SN7002 E6327 Q67000-S063 SOT-23 marking HG sot23 7002 transistor marking 7002
Text: SN 7002 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking SN 7002 60 V 0.19 A 5Ω SOT-23 sSG Type SN 7002 Ordering Code Q67000-S063 D Tape and Reel Information
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OT-23
Q67000-S063
E6327
Sep-13-1996
MARKING SSG SOT23
7002
MARKING 7002
SSG 23 TRANSISTOR
SN7002
E6327
Q67000-S063
SOT-23 marking HG
sot23 7002
transistor marking 7002
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2N7002PT
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2N7002PT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.250 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 * Rugged and reliable.
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2N7002PT
OT-23
OT-23)
002PT
2N7002PT
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NDS7002A
Abstract: e05a 2N7000 2N7002 C1995 NDF7000A national 2N7002 sot23 7002
Text: 2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology These products have been
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2N7000
2N7002
NDF7000A
NDS7002A
NDS7002A
e05a
C1995
national 2N7002
sot23 7002
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MJE2955
Abstract: 2N3645 bc557 BC307 BC212
Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu The facturer
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O-92SP
O-237
O-220
O-928>
iO051
MJE2955
2N3645
bc557
BC307
BC212
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2N7002x
Abstract: transistor SOT23 1d 2N7002M
Text: ALPHA SEMICONDUCTOR 2N7002 E xcellence in A n alo g Pow er P roducts N-Channel Enhancement-Mode MOS Transistor PRODUCT DESCRIPTION T he A L PH A S em iconductor’s 2N 7002 device is a vertical D M O S FE T transistor housed in a surface m ount SO T-23 for m icro
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2N7002
2N7002M
2N7002X
OT-23
OT-23
transistor SOT23 1d
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TLP721F
Abstract: No abstract text available
Text: GaAs IRED & PHOTO-TRANSISTOR TLP721F TLP721F OFFICE MACHINE. U nit in mm SWITCHING POWER SUPPLY. The TOSHIBA TLP721F consists of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode in a four lead plastic DIP package. All param eters are tested to the specification of TLP721.
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TLP721F
TLP721F)
TLP721F
TLP721.
UL1577,
E67349
BS415
SS4330784
VDE0884
VDE0804
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convertisseur de 12v -220v
Abstract: porte logique porte logique and ttl 7004 TRANSISTOR BIPOLAIRE IC Ensemble
Text: SF.T SF.T SF.T SF.T F.E.T. ANALOGIC GATES PORTES AN ALO G IQ UES A TRANSISTORS A EFFET DE CHAMP These silicon devices are constituted by : Ces dispositifs, eu siliciu m s o nt composés : • a field-effect transistor N channel - d ’un transistor à e ffe t de cham p canal N
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702 sot 23
Abstract: transistor marking 7002
Text: Central 2N 7002 semiconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.
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2N7002
OT-23
200mA
702 sot 23
transistor marking 7002
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2N7002LT1
Abstract: No abstract text available
Text: I MOTOROLA Order this document by 2N7002LT1/D SEMICONDUCTOR TECHNICAL DATA TM OS FET Transistor 2N 7002LT1 N -C h a n n e l E n hancem en t 3 drain Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit V d SS 60 Vdc VDGR 60 Vdc 'D Id mAdc 'd m
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2N7002LT1/D
7002LT1
O-236AB)
2N7002LT1
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N7002LT1
Abstract: 2N7002LT1 N7002LT
Text: TRANSYS 2N 7002LT1 mCTKONICS t LIMITED 3 DRAIN FET Transistor N-Channel Enhancement MAXIMUM RATINGS 2 Rating Symbol Value Unit VDSS 60 Vdc V d GR 60 Vdc id mAdc Id m ±115 ±75 ±800 Vg s Vg s m ±20 ±40 Vdc Vpk Drain-Source Voltage Drain-Gate Voltage R q s = 1
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N7002LT1
2N7002LT1
OT-23
N7002LT1
2N7002LT1
N7002LT
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MARKING SSG SOT23
Abstract: transistor marking 7002 TRANSISTOR 7002 marking code sSG SOT23
Text: SIEMENS SN 7002 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0-8.2.0V Pin 1 Pin 2 Pin 3 ~G Type VDS b f lDS(on) Package Marking SN 7002 60 V 0.19 A 5Ü SOT-23 sSG Type SN 7002 Ordering Code Q67000-S063
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OT-23
Q67000-S063
E6327
OT-23
GPS05557
MARKING SSG SOT23
transistor marking 7002
TRANSISTOR 7002
marking code sSG SOT23
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IMIT TC2
Abstract: Mosfet 2n7000 2N7002-702 2N7002 MARKING 712 mosfet motor dc 48v NDS7002A-712 702 TRANSISTOR sot-23 "ON Semiconductor" 2N7002 NDS7002A 2N7000
Text: Semiconductor March 1993 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third
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2N7000/2N7002/NDF7000A/NDS7002A
IMIT TC2
Mosfet 2n7000
2N7002-702
2N7002 MARKING 712
mosfet motor dc 48v
NDS7002A-712
702 TRANSISTOR sot-23
"ON Semiconductor" 2N7002
NDS7002A
2N7000
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2N7000
Abstract: 2N700 7002A 2n7002 FE -2N7002 "ON Semiconductor" 2N7002
Text: November 1995 PAIRCHII-D M ICDNDUCTQ R ! 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high
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2N7000
2N7002
NDS7002A
400mA
2N7002A
2N700
7002A
FE -2N7002
"ON Semiconductor" 2N7002
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7002N
Abstract: 2N7000 S7002
Text: November 1995 PAIRCHII-D M ICDNDUCTQ R ! 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high
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2N7000
2N7002
NDS7002A
400mA
2N7002A
7002N
S7002
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PDF
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dc7002n
Abstract: No abstract text available
Text: SEM IC ONDUCTO R tm NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This
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NDC7002N
dc7002n
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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Darlington transistor to 92
Abstract: N50 DIODE
Text: INTEGRATED TELECOM CIRCUITS ITC117P/ITC135P/ITC137P DESCRIPTION T h e Integrated Telecom Circuit series com bines a 1-Form-A solid state relay, bridge rectifier, Darlington transistor, optocoupler and zener diodes in one package for all your telecom applications.
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ITC117P/ITC135P/ITC137P
ITC117P/ITC135P/ITC137P
ITC117P/ITC135P/1TC137P
Darlington transistor to 92
N50 DIODE
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N7000
Abstract: 2N7000 MOSFET CJ NDF7000A sfs sot23 Mosfet 2n7000 2N7000 2N7002 NDF7000A NDS7002A 7002 transistor sm
Text: March 1993 Semiconductor 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National's very high cell density third generation DMOS technology. These products have been
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2N7000/2N7002/NDF7000A/NDS7002A
81-043-299-240B
bSD1130
N7000
2N7000 MOSFET
CJ NDF7000A
sfs sot23
Mosfet 2n7000
2N7000
2N7002
NDF7000A
NDS7002A
7002 transistor sm
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NDS7002A
Abstract: No abstract text available
Text: March 1993 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology. These products have been
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2N7000/2N7002/NDF7000A/NDS7002A
NDS7002A
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PDF
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