2SC4815
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4815 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4815 is a power transistor developed for high-speed switching and features low VCE sat and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators.
|
Original
|
PDF
|
2SC4815
2SC4815
|
Untitled
Abstract: No abstract text available
Text: ELM98xxxxC CMOS Voltage regulator •General description ELM98xxxxC is CMOS voltage regulator, which mainly consists of reference voltage source, error amplifier, short-protected control transistor, thermal protection circuit, output voltage setting resistors. The standard output
|
Original
|
PDF
|
ELM98xxxxC
ELM98
|
Mosfet FDD
Abstract: CBVK741B019 F63TNR FDD6680 MTD3055V
Text: MTD3055V N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
|
Original
|
PDF
|
MTD3055V
Mosfet FDD
CBVK741B019
F63TNR
FDD6680
MTD3055V
|
DSAS 13-0
Abstract: d92 02 a9hv
Text: IRFR9024 P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
|
Original
|
PDF
|
IRFR9024
DSAS 13-0
d92 02
a9hv
|
a9hv
Abstract: No abstract text available
Text: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
|
Original
|
PDF
|
MTD2955V
a9hv
|
UN1111
Abstract: UNR1111 XN06111 XN6111
Text: Composite Transistors XN06111 XN6111 Silicon PNP epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Symbol
|
Original
|
PDF
|
XN06111
XN6111)
UN1111
UNR1111
XN06111
XN6111
|
MTD3055V
Abstract: fairchild mosfets
Text: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
|
Original
|
PDF
|
MTD3055V*
MTD3055V
fairchild mosfets
|
a7w transistor
Abstract: a7w 57 transistor a7w
Text: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
|
Original
|
PDF
|
MTD3055V*
a7w transistor
a7w 57
transistor a7w
|
IRFR9024
Abstract: No abstract text available
Text: IRFR9024* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
|
Original
|
PDF
|
IRFR9024*
IRFR9024
|
MTD2955
Abstract: CBVK741B019 F63TNR FDD6680 MTD2955V
Text: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
|
Original
|
PDF
|
MTD2955V
MTD2955
CBVK741B019
F63TNR
FDD6680
MTD2955V
|
MTD2955V
Abstract: transistor WT9 a9hv
Text: MTD2955V* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
|
Original
|
PDF
|
MTD2955V*
MTD2955V
transistor WT9
a9hv
|
Untitled
Abstract: No abstract text available
Text: IRFR9024* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
|
Original
|
PDF
|
IRFR9024
IRFR9024*
|
Untitled
Abstract: No abstract text available
Text: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
|
Original
|
PDF
|
MTD3055V
MTD3055V*
|
Untitled
Abstract: No abstract text available
Text: MTD2955V* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
|
Original
|
PDF
|
MTD2955V
MTD2955V*
|
|
|
3055VL
Abstract: a9hv transistor WT9 MTD3055VL u6 transistor AYRA
Text: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
|
Original
|
PDF
|
MTD3055VL
MTD3055VL
O-252
3055VL
a9hv
transistor WT9
u6 transistor
AYRA
|
D665
Abstract: SI4532DY w992
Text: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very
|
Original
|
PDF
|
Si4532DY
D665
w992
|
Untitled
Abstract: No abstract text available
Text: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very
|
Original
|
PDF
|
Si4532DY
|
Untitled
Abstract: No abstract text available
Text: Si4532DY Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very
|
Original
|
PDF
|
Si4532DY
|
Untitled
Abstract: No abstract text available
Text: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very
|
Original
|
PDF
|
Si4532DY
|
transistor 6z
Abstract: marking 6Z UN1111 XN6111
Text: Composite Transistors XN6111 Silicon PNP epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Collector to base voltage Rating Collector to emitter voltage of element Collector current 1 : Collector Tr1 2 : Base (Tr1)
|
Original
|
PDF
|
XN6111
transistor 6z
marking 6Z
UN1111
XN6111
|
marking 6Z
Abstract: UN1111 UNR1111 XN06111 XN6111
Text: Composite Transistors XN06111 XN6111 Silicon PNP epitaxial planer transistor 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3 1.50+0.25
|
Original
|
PDF
|
XN06111
XN6111)
UNR1111
UN1111)
marking 6Z
UN1111
XN06111
XN6111
|
marking 6Z
Abstract: UN1111 UNR1111 XP06111 XP6111
Text: Composite Transistors XP06111 XP6111 Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
|
Original
|
PDF
|
XP06111
XP6111)
UNR1111
UN1111)
marking 6Z
UN1111
XP06111
XP6111
|
l7805 regulator
Abstract: L4960 NOTE transistor l4941 data sheet ic l7805 voltage drop circuit from 220V to 10V l7805 line L4960 L6217 l7805 L4941 equivalent
Text: APPLICATION NOTE VERY LOW DROP REGULATORS ENHANCE SUPPLY PERFORMANCE By Paolo ANTONIAZZI and Arturo WOLFSGRUBER Standard three-terminal voltage regulator ICs use an NPN transistor as the series pass element, so the input-output voltage drop is 1.5V-2V. Low dropout
|
Original
|
PDF
|
|
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
|
OCR Scan
|
PDF
|
|
