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    TRANSISTOR 6802 Search Results

    TRANSISTOR 6802 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 6802 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400 PDF

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N PDF

    acrian RF POWER TRANSISTOR

    Abstract: acrian RF POWER TRANSISTOR 300 w acrian inc acrian H100-50
    Text: DE| ACRIAN INC 2301 DESCRIPTION 1.5 WATTS - 20 VOLTS 2300 MH2 The 2301 is a common base transistor capable of providing 1.5 watts of C W RF output power at 2300 MHz. This hermetically sealed transistor is specifically designed for telemetry and telecommunications applications. It


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    -65to acrian RF POWER TRANSISTOR acrian RF POWER TRANSISTOR 300 w acrian inc acrian H100-50 PDF

    acrian RF POWER TRANSISTOR

    Abstract: PU 391 acrian inc
    Text: GENERAL 2010 DESCRIPTION 10 WATT - 28 VOLTS 2000 MHZ The 2010 is a common base transistor capable of providing 10 watts of CW RF output power in the 2000 MHz band. This hermetically sealed transistor is specifically designed for Class C amplifier applications. It utilizes gold


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    U14Q9 400mA, D0D1411 10nfd@ acrian RF POWER TRANSISTOR PU 391 acrian inc PDF

    acrian RF POWER TRANSISTOR

    Abstract: 960-1215 MHz transistor 20W ejc2 x band pulsed amplifier radar ELECTROLYTIC CAPACITOR 5u acrian RF resistor acrian inc acrian
    Text: 0182998 ACRIAN INC GENERAL T? DE jOlflSTTfl □□□lOflfl 0 0912*45 DESCRIPTION 45 WATTS - 50 VOLTS 960-1215 MHz The 0912-45 is an internally matched, common base transistor providing 45 watts of pulsed RF output power across the 960-1215 MHz band. This transistor is


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    -65to T-33-15 50VDC 10OpF acrian RF POWER TRANSISTOR 960-1215 MHz transistor 20W ejc2 x band pulsed amplifier radar ELECTROLYTIC CAPACITOR 5u acrian RF resistor acrian inc acrian PDF

    transistor 30054

    Abstract: transistor 3005 2 acrian RF POWER TRANSISTOR transistor 3005 i 3005-2 transistor 3005-2 transistor b 30054 acrian ic ACRIAN acrian inc
    Text: 0182998 ACRIAN GENERAL INC 97D 0 1 4 7 9 3005 DESCRIPTION 5 WATT - 28 VOLTS 3000 MHz The 3005 is a common base transistor capable of providing 5 watts of CW RF output power at 3000 MHz. This hermetically sealed transistor is specifically designed for telemetry and telecommunications


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    acrian RF POWER TRANSISTOR

    Abstract: Acrian s 46120 BVces Scans-00115701
    Text: 0182998 ACRIAN INC dFJ T~~ 3Jt~s/ 0DP1531 1 46120 GENERAL DESCRIPTION 20 WATTS - 28 VOLTS 1000 MHz The 46120 is a stable common emitter transistor capable of providing 20 watts of CW RF output power across the 500-1000 MHz frequency band. This transistor is specifically designed


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    0Dpi53i 100mA acrian RF POWER TRANSISTOR Acrian s 46120 BVces Scans-00115701 PDF

    2015M

    Abstract: 2015M-2
    Text: 0182998,. ACRI AN, INC 0D D 1414 2015M D ES C R IP TIO N 15 WATTS - 28 VOLTS 2 OHz The 2015M is an internally matched, common base transistor ' capable of providing 15 Watts of C W RF output power across the 1000-2000 M Hz band. This transistor is specifically designed


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    2015M 600mA 2015M 2015M-2 PDF

    3B817

    Abstract: 2SB817 2SD1047 transistor 2sd1047 2SB817 2SD1047
    Text: Ordering number: EN 680F 2SB817/2SD1047 2SB817 : P N P Ep itax ial Plan ar Silicon Transistor 2SD1047 : N P N Triple Diffused Plan ar Silicon Transistor 140V/12A, AF 60W Output Applications F e atu re s •Capable of being mounted easily because of one-point fixing type plastic molded package


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    2SB817/2SD1047 2SB817 2SD1047 40V/12A, 2SB817 2SD1047. 3B817 2SD1047 transistor 2sd1047 2SB817 2SD1047 PDF

    acrian RF POWER TRANSISTOR

    Abstract: 91s Amplifier 2023-6T
    Text: GENERAL 2023-16 D E S C R IP T IO N 16 WATTS - 24 VOLTS 2.0-2.3 GHz The 2023-16 is an Internally matched common base transistor providing 16 watts of RF C W output power across the 2000-2300 M Hz band. This hermetically sealed transistor Is specifically designed for telemetry


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    2023-6T T-33-11 160mA Tc-50Â acrian RF POWER TRANSISTOR 91s Amplifier 2023-6T PDF

    acrian RF POWER TRANSISTOR

    Abstract: JTDA50 JTDA50-2 Scans-00115670
    Text: 0182998 ACRIAN INC GENERAL T? DE j G i a a n f l □□□1012 2 T D ' T - J j - LS JTDA50 DESCRIPTION The JTDA50 is a common basis transistor providing 50 watts of pulsed RF output power across the 960-1215 MHz Band. This hermetically sealed transistor is specifically designed for


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    JTDA50 UTDA50 JTDA50-2 acrian RF POWER TRANSISTOR JTDA50-2 Scans-00115670 PDF

    acrian RF POWER TRANSISTOR

    Abstract: 3001 transistor ACRIAN K3003 acrian inc AN-3001 transistor m 3003 g
    Text: A C R I A N INC t ? deT| oiaa^a DDGm?i o 3001 GENERAL DESCRIPTION The 300.1 is a common base transistor capable of providing 1 watt of CW RF output power at 3000 MHz. This hermetically sealed transistor is specifically designed for telemetry and telecommunications applications. It uses gold metalization and


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    0DD1473 0D01474 acrian RF POWER TRANSISTOR 3001 transistor ACRIAN K3003 acrian inc AN-3001 transistor m 3003 g PDF

    acrian RF POWER TRANSISTOR

    Abstract: 1000 class ab power amplifier LBAA s 46120 Scans-00115699
    Text: 0182998 ACRIAN "t? INC ' 3S- * 7 de I G i a s ^ a DDGisa? □ 46104 GENERAL DESCRIPTION 4 WATTS - 28 VOLTS 1000 MHz The 46104 is a stable common emitter transistor capable of providing 4 watts of CW RF output power across the 500-1000 MHz frequency band. This transistor is specifically designed


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    OUT40

    Abstract: No abstract text available
    Text: 0 182998 .AGRIAN. INC T? infini02e]TA 0001433 a i l kCRIAN G EN ER A L 2304 D E S C R IP TIO N 4.0 WATTS - 20 VOLTS 2300 MHz The 2304 is a common base transistor capable of providing 4 watts of CW RF output power at 2300 MHz. This hermetically sealed transistor is specifically designed


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    0DG1433 cc-20 OUT40 PDF

    microstripline

    Abstract: acrian RF POWER TRANSISTOR 8mob5 VCC125 ACRIAN transistor 835 A1W TRANSISTOR 8008-6 8MOB15 8MOB25
    Text: ^ 0 1 8 2 .9 9 8 ':, A C R I AN A Ï NC*; GENERAL »E D 0 0 1 3 S ti D E SC R IP TIO N The 8MOB25 is an internally matched, common base transistor capable of providing 25 Watts of CW RF output power at 835 MHz. This transistor is specifically designed for cellular radio amplifier


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    000135b 8MOB25 1-10PF microstripline acrian RF POWER TRANSISTOR 8mob5 VCC125 ACRIAN transistor 835 A1W TRANSISTOR 8008-6 8MOB15 PDF

    acrian RF POWER TRANSISTOR

    Abstract: Acrian T9 acrian RF POWER TRANSISTOR T9 acrian inc
    Text: 0 1 8 2 9 9 8 ACRI'AN. INC h, Hü Æ& GENERAL T? SPI ÜP D E ;| 0 1 0 2 ^ 0 ^!jjj|jjjgjgg 0DD1403 4 J ^0 |j|ijj|jUp*^ 2003 D E S C R IP T IO N The 2003 is a common base transistor capable of providing 3 Watts of C W RF output power in the 1000-2000 MHz. This hermetically sealed transistor is specifically designed for


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    0DD1403 Vcb-28V Ic-100mA Tf-25Â acrian RF POWER TRANSISTOR Acrian T9 acrian RF POWER TRANSISTOR T9 acrian inc PDF

    acrian RF POWER TRANSISTOR

    Abstract: 46100-2 DDD135S dfjg acrian inc acrian acrian B
    Text: "i? ACRIAN INC dF J DIAS']Tfl 0 0 0 1 5 5 4 4 r mmamm a m « • ■ !— j i m H n m m h v j l n iH shM H ■ m — — wo - ■ H g fM I 1 AN 46100/46101 GENERAL DESCRIPTION The 46100 is a common emitter transistor capable of providing 1 Watt of CW RF output power at 960 MHz. This transistor is


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    acrian RF POWER TRANSISTOR

    Abstract: transistor 2001 hi acrian 2001 acrian inc
    Text: T7 A C R I A N INC S E I DlñSTTñ D D 0 1 4 0 D 1 ’Ja iküa Sai JO wSh25«i KSP¡Sr n i km mrim mKm iwl WPÁi1 G EN ER A L 2001 D E S C R IP TIO N The 2001 is a common base transistor capable of providing 1.0 Watts of CW RF output power at 2000 MHz. This hermetically sealed transistor is specifically designed for


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    0D014D0 Vcb-28V 100mA acrian RF POWER TRANSISTOR transistor 2001 hi acrian 2001 acrian inc PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    UMIL80

    Abstract: UMIL10 j105 transistor acrian inc
    Text: UMILIO GENERAL DESCRIPTION The UMIL10 is a general purpose UHF power common emitter transistor designed for use through 400 MHz. It features gold metallization for high reliability and diffused ballasting for superior ruggedness. It can be operated full Class A at


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    UMIL10 UMIL80 j105 transistor acrian inc PDF

    0105-50

    Abstract: Scans-00115685
    Text: 0182998 ACRIAN GENERAL 97D 0 1156 INC 0104-100 DESCRIPTION 100 WATTS - 28 VOLTS 100-400 MHz The 0104-100 balanced transistor is specifically designed for wideband operation from 100-400 MHz. It may be operated Class A, AB or C. Gold metalization and silicon


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    -T-33-15 -65to Vcc-28V T-33-15 0105-50 Scans-00115685 PDF

    acrian RF POWER TRANSISTOR

    Abstract: acrian RF POWER TRANSISTOR 300 w TRANSISTOR S250 S250-50 acrian ic S250-50-2 S250-50-3 S25-50 le200 acrian inc
    Text: 0182998 ACRIAN INC 97D 01153 D -33-15 DE •dlfla'na 00 01153 7 GENERAL DESCRIPTION The S250-50 is a 50V 250 W PEP NPN silicon RF power transistor designed for 1.5 to 30 MHz linear applications. Gold metallization and difussed resistors assure optimum reliability and ruggedness.


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    S250-50 S250-50-3 Icq-100 acrian RF POWER TRANSISTOR acrian RF POWER TRANSISTOR 300 w TRANSISTOR S250 acrian ic S250-50-2 S250-50-3 S25-50 le200 acrian inc PDF

    acrian RF POWER TRANSISTOR

    Abstract: VTV-075-2 F627-8Q1 VTV150 F627-8 VTV075 VTV-075 VTV-075-3 VTV-075-4 acrian inc
    Text: GENERAL V I v - u / o 7.5 WATTS • 2$ VOLTS 175-225 MHz VHF - TV LINEAR DESCRIPTION The VTV-075 is a silicon NPN transistor designed for linear broadcast applications. It has been designed for high efficiency, 3high linearity, Class A operation in VHF Band III


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    VTV-075 5-70pF 2-20pF 25-240pF 50//f 1000pF F627-8Q1 acrian RF POWER TRANSISTOR VTV-075-2 F627-8Q1 VTV150 F627-8 VTV075 VTV-075-3 VTV-075-4 acrian inc PDF

    UMIL60

    Abstract: C2M60-28 UMIL25 UMIL60-2 k 3683 transistor acrian inc
    Text: 0182998 ACRIAN INC ~t? d T J G ia s^ a cmoiaoM D jj-/y UMIL60 GENERAL DESCRIPTION The UMIL60 is a double input matched broadband transistor specifically intended for use in the 225-400 MHz frequency band. It may be operated Class A, AB, or C. Gold metallization


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    0D015G4 UMIL60 C2M60-28. 000120k T-33-13 UMIL60 C2M60-28 UMIL25 UMIL60-2 k 3683 transistor acrian inc PDF