on 222 transistor
Abstract: 4503 ISAHAYA Diagrams
Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN226AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN226AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=0.22kΩ,R2=2.2kΩ）
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RTGN226AP
RTGN226AP
on 222 transistor
4503
ISAHAYA
Diagrams
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Japanese Transistor
Abstract: RTGN141AP RTGN141 rtgn14
Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN141AP PRELIMINARY TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN141AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=10kΩ,R2=10kΩ）
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RTGN141AP
RTGN141AP
Japanese Transistor
RTGN141
rtgn14
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Japanese Transistor
Abstract: R1047K 0.47k resistor rtgn426
Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN426AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN426AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=0.47kΩ,R2=4.7kΩ）
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RTGN426AP
RTGN426AP
Japanese Transistor
R1047K
0.47k resistor
rtgn426
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RTGN234AP
Abstract: rtgn234 Japanese Transistor isahaya transistor electronics
Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN234AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN234AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=2.2kΩ,R2=10kΩ）
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RTGN234AP
RTGN234AP
rtgn234
Japanese Transistor
isahaya
transistor electronics
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RTGN14BAP
Abstract: 4503 swithing rtgn14
Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN14BAP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN14BAP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R2=10kΩ） ● High collector current IC=1A
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RTGN14BAP
RTGN14BAP
4503
swithing
rtgn14
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RTGN432P
Abstract: No abstract text available
Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN432P TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN432P is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=4.7kΩ,R2=10kΩ） ● High collector current IC=1A
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RTGN432P
RTGN432P
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RTGN131AP
Abstract: 4503 rtgn131
Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN131AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN131AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=1kΩ,R2=1kΩ） ● High collector current IC=1A
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RTGN131AP
RTGN131AP
4503
rtgn131
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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OCR Scan
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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PDF
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NEC 2403
Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
Text: DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
2SC4227-T1
NEC 2403
3181 R33
2SC4227-T2
of transistor C 4908
TC-2403
0 811 404 614
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A 564 transistor
Abstract: 3181 R33 transistor A 564
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
A 564 transistor
3181 R33
transistor A 564
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RT1N241
Abstract: RT3T22M
Text: PRELIMINARY RT3T22M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION is a composite transistor built with 2.1 RT1N241 chip and RT1P241 chip in SC-88 package. 1.25 2.0 Each transistor elements are independent.
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RT3T22M
RT1N241
RT1P241
SC-88
RT3T22M
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RT1P144
Abstract: RT3T14M
Text: PRELIMINARY RT3T14M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION is a composite transistor built with 2.1 RT1N144 chip and RT1P144 chip in SC-88 package. 1.25 2.0 Each transistor elements are independent.
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RT3T14M
RT1N144
RT1P144
SC-88
RT3T14M
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transistor marking N1
Abstract: RT1N141 RT3N11M
Text: RT3N11M Compound Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING RT3N11M is compound transistor built with two Unit：mm RT1N141 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.
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RT3N11M
RT3N11M
RT1N141
SC-88
JEITASC-88
transistor marking N1
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RT3N77M
Abstract: No abstract text available
Text: PRELIMINARY RT3N77M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION is a composite transistor built with 2.1 RT1N140 chip and RT1N140 chip in SC-88 package. 1.25 2.0 Each transistor elements are independent.
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RT3N77M
RT1N140
SC-88
JEITASC-88
RT3N77M
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RT3N66M
Abstract: No abstract text available
Text: PRELIMINARY RT3N66M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION is a composite transistor built with 2.1 RT1N430 chip and RT1N430 chip in SC-88 package. 1.25 2.0 Each transistor elements are independent.
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RT3N66M
RT1N430
SC-88
JEITASC-88
RT3N66M
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RT1P141
Abstract: RT3P11M
Text: RT3P11M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3P11M is compound transistor built with two RT1P141 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.
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RT3P11M
RT3P11M
RT1P141
SC-88
JEITASC-88
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Untitled
Abstract: No abstract text available
Text: RT3P77M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3P77M is compound transistor built with two RT1P140 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.
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RT3P77M
RT3P77M
RT1P140
SC-88
JEITASC-88
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Untitled
Abstract: No abstract text available
Text: RT3PEEM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3PEEM is compound transistor built with two RT1P234 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.
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RT1P234
SC-88
JEITASC-88
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RT3N22M
Abstract: RT1N241 RT1N* MARKING
Text: RT3N22M Compound Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3N22M is compound transistor built with two RT1N241 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.
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RT3N22M
RT3N22M
RT1N241
SC-88
JEITASC-88
RT1N* MARKING
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transistor NEC D 587
Abstract: 3181 R33 transistor c 3181
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
2SC4227-T1
transistor NEC D 587
3181 R33
transistor c 3181
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY RT3TTM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION is a composite transistor built with 2.1 RT1N250 chip and RT1P250 chip in SC-88 package. 1.25 2.0 Each transistor elements are independent.
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RT1N250
RT1P250
SC-88
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RT3P66M
Abstract: No abstract text available
Text: PRELIMINARY RT3P66M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3P66M is compound transistor built with two RT1P430 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.
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RT3P66M
RT3P66M
RT1P430
SC-88
JEITASC-88
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2SC5938
Abstract: RT3C55M
Text: b RT3C55M Composite Transistor For Muting Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3C55M is compound transistor built with two 2SC5938 chips in SC-88 package. FEATURE Silicon NPN epitaxial type Each transistor elements are independent.
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RT3C55M
RT3C55M
2SC5938
SC-88
JEITASC-88
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RT1P441
Abstract: RT3P33M
Text: PRELIMINARY RT3P33M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3P33M is compound transistor built with two RT1P441 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.
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RT3P33M
RT3P33M
RT1P441
SC-88
JEITASC-88
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