Liteon PC817
Abstract: cosmo 817 CNY 817 PC123 Triac Liteon 4n33 toshiba PC817 4n33 4n25 datasheet 4N25 CROSS nec pc123 817 cosmo
Text: PHOTO COUPLER CROSS REFERENCE Transistor Output - DC Input KODENSHI SHARP PC-17T1 PC-17T2 PC-17T4 FAIRCHILD VISHAY NEC LITEON COSMO H11A817 K817P SFH615A SFH615AA SFH617A PS2501-1 PS2561-1 PS2571-1 LTV-816 LTV-817 -V LTV-819-1 LTV123 LTV-610 K1010 PS2501-2
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PC-17T1
PC-17T2
PC-17T4
H11A817
K817P
SFH615A
SFH615AA
SFH617A
PS2501-1
PS2561-1
Liteon PC817
cosmo 817
CNY 817
PC123 Triac
Liteon 4n33
toshiba PC817
4n33 4n25 datasheet
4N25 CROSS
nec pc123
817 cosmo
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LDJ2H825M03FA062
Abstract: AWB7225 DATE CODE MURATA Hybrid Couplers
Text: AWB7225 860 - 894 MHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System
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AWB7225
AWB7225
LDJ2H825M03FA062
DATE CODE MURATA
Hybrid Couplers
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HVR-1X 7 diode
Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
Text: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility
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O01EC0
TM1061S-L
TM1061S-R
TM1241S-L
TM1241S-R
TM1261S-L
TM1261S-R
TM1641P-L
TM1641S-L
TM1661P-L
HVR-1X 7 diode
STR80145
SE135N
hvr 1X 3 diode
semiconductor STR 20005
sk a 3120c
SE110N
ux-c2b equivalent
transistor CS 9012 PNP
STR83159
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transistor BC 458
Abstract: transistor a42 MO-003 transistor Bc 540 ua109a CERAMIC PIN GRID ARRAY CPGA lead frame transistor bc 577 W144A UA65A CERAMIC QUAD FLATPACK CQFP
Text: Hermetic Dimensional/Thermal Data The following table identifies all of the hermetic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the ceramic and
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MARKING E4 "Pin Diode"
Abstract: PS7200J mark code e4 diode KLS7-DS-02-B-00 DIP
Text: California Eastern Laboratories Solid State Relays Selection Guide NUMBERING SYSTEM PS7XXXL-XX-XX Taping E3/E4 F3/F4 All SOP products are available in T&R and most DIP product are available in Surface Mount/ T&R. 1 Form A/1 Form B 2 Form A/2 Form B Dual 1 Form A/1 Form B
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A11/A15
PS71XX
PS72XX
PS73XX
PS75XX
PS78XX
SS-441-01-55
SS-EN-60-950
SFS-EN-60-950
NEK-EN-60-950
MARKING E4 "Pin Diode"
PS7200J
mark code e4 diode
KLS7-DS-02-B-00 DIP
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LM317
Abstract: LM317 application note LM317 10 pin ICS1702EB operation of LM317 LM-317 AN0007 lm317 5V LM317 applications ICS1702
Text: Galaxy Power, Inc. 2500 Eisenhower Avenue • PO Box 890 • Valley Forge, PA 19482-0890 • Ph: 610 676-0188 •Fax: (610) 676-0189 • www.galaxypower.com Application Note #: AN0007 Device: ICS1702 Description: LM317 Current Source Operation in the ICS1702EB/CR
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AN0007
ICS1702
LM317
ICS1702EB/CR
LM317.
LM317
ICS1702EB
LM317 application note
LM317 10 pin
operation of LM317
LM-317
AN0007
lm317 5V
LM317 applications
ICS1702
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Untitled
Abstract: No abstract text available
Text: SHD418302 SHD418302A SHD418302B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4024, REV.Formerly part number SHD4182/A/B NPN BI-POLAR DARLINGTON POWER TRANSISTOR • • • Hermetic, Ceramic Package Electrically equivalent to 2N6301 Surface Mount Package
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SHD4182/A/B
SHD418302
SHD418302A
SHD418302B
2N6301
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4023 IC
Abstract: world transistor equivalent and data
Text: SHD418309 SHD418309A SHD418309B SENSITRON SEMICONDUCTOR PRELIMINARY DATA SHEET DATA SHEET 4023, REV.- NPN BI-POLAR POWER TRANSISTOR Hermetic, Ceramic Package Electrically equivalent to 2N3442 Surface Mount Package Absolute Maximum Ratings* Symbol
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SHD418309
SHD418309A
SHD418309B
2N3442
4023 IC
world transistor equivalent and data
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD418203/A/B TECHNICAL DATA DATA SHEET 941, REV. A Formerly part number SHD4183/A/B PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N3741 • Surface Mount Package Absolute Maximum Ratings*
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SHD4183/A/B
SHD418203/A/B
2N3741
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD418204/A/B TECHNICAL DATA DATA SHEET 1077, REV. – Formerly part number SHD4184/A/B PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N6193 • Surface Mount Package Absolute Maximum Ratings*
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SHD4184/A/B
SHD418204/A/B
2N6193
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LM317
Abstract: nimh charger lm317 MJE371 LM317 application note nimh lm317 ICS1718 lm317 regulator ICS1700 ICS1708 ICS1700A
Text: Galaxy Power, Inc. 2500 Eisenhower Avenue • PO Box 890 • Valley Forge, PA 19482-0890 • Ph: 610 676-0188 •Fax: (610) 676-0189 • www.galaxypower.com Application Note #: AN0018 Device: ICS1700A, ICS1702, ICS1708, ICS1712, ICS1718, ICS1722 Description: 1 Amp Linear NiCd/NiMH Charger Concept Using On-Semi's MJE371
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AN0018
ICS1700A,
ICS1702,
ICS1708,
ICS1712,
ICS1718,
ICS1722
MJE371
LM317
nimh charger lm317
MJE371
LM317 application note
nimh lm317
ICS1718
lm317 regulator
ICS1700
ICS1708
ICS1700A
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IL7824ACM
Abstract: No abstract text available
Text: IL7824ACM CHIP FOR THREE-TERMINAL POSITIV VOLTAGE REGULATOR IC Features: Output Current in Excess of 1.5A Tj=25°C,PD≤15W No External Components Required Internal Short Circuit Current Limiting Internal Thermal Overload Protection Output Transistor Safe-Area Compensation
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IL7824ACM
PD15W)
230x230
25AIo0
0VVin38V;
Tj125
IL7824ACM
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Untitled
Abstract: No abstract text available
Text: IL7809ACM CHIP FOR THREE-TERMINAL POSITIV VOLTAGE REGULATOR IC Features: Output Current in Excess of 1.5A Tj=25°C,PD≤15W No External Components Required Internal Short Circuit Current Limiting Internal Thermal Overload Protection Output Transistor Safe-Area Compensation
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IL7809ACM
PD15W)
Groun36V
230x230
5VVin24V
Tj125
25AIo0
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Untitled
Abstract: No abstract text available
Text: IL7818ACM CHIP FOR THREE-TERMINAL POSITIV VOLTAGE REGULATOR IC Features: Output Current in Excess of 1.5A Tj=25°C,PD≤15W No External Components Required Internal Short Circuit Current Limiting Internal Thermal Overload Protection Output Transistor Safe-Area Compensation
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IL7818ACM
PD15W)
230x230
21VVin33V;
Tj125
25AIo0
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IL7815ACM
Abstract: il7815
Text: IL7815ACM CHIP FOR THREE-TERMINAL POSITIV VOLTAGE REGULATOR IC Features: Output Current in Excess of 1.5A Tj=25°C,PD≤15W No External Components Required Internal Short Circuit Current Limiting Internal Thermal Overload Protection Output Transistor Safe-Area Compensation
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IL7815ACM
PD15W)
230x230
5VVin30V
Tj125
25AIo0
IL7815ACM
il7815
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Untitled
Abstract: No abstract text available
Text: ERICSSON ^ E 20155* 9 Watts, 610-960 MHz UHF Power Transistor Description T he 20 15 5 is a class C, NPN , com m o n base RF po w e r tra n sisto r intended fo r 28 V d c op era tion from 610 to 960 M Hz. Rated at 9 w a tts m inimum output power, it m ay be used for both C W and PEP applications.
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IFBB
Abstract: No abstract text available
Text: Philips Semiconductors b b S 3T 31 0 Q 3 Q lb 4 610 M UHF push-pull power MOS transistor a n N AMER PHILIPS/DISCRETE FEATURES APX Product specification BLF547 bH E I PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures
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BLF547
OT262A2
0D30172
MRB022
IFBB
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ m CUPNTS blE ]> • 4447564 D0ÜT7Ö3 HEW LETT A T -0 1 610 PACKARD UP to 4 Hz General Purpose Silicon Bipolar Transistor 33b 100 mil Package Features • 22.0 dBm typical Pi dB at 2.0 GHz • 9.5 dB typical Gi dB at 2.0 GHz • • High Gain-Bandwidth Product: 7.0 GHz typical fr
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AT-01610
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RXB06150W
Abstract: FO-91 TRANSISTOR package erie capacitor ERIE ceramic capacitor variable capacitor
Text: Philips Sem iconductors Prelim inarjrspecification - i ^ NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL 3 3 - / 5 ' 1 RXB06150W _ SbE D • 711DflEb D O H b S 45 ^2T FEATURES DESCRIPTION APPLICATIONS
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RXB06150W
FO-91B
FO-91
RXB06150W
FO-91 TRANSISTOR package
erie capacitor
ERIE ceramic capacitor
variable capacitor
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RZB06050W
Abstract: transistor B42 Transistor 2TD 476 capacitor 100B102KP50X capacitor 476
Text: P h ilip s S e m icon d u ctors Prelim inary sp ecification NPN silicon planar epitaxial „ m ic rowave power transistor PHILIPS INTERNATIONAL FEATURES Suitable for short and medium pulse applications up to 1 ms/10% Internal input prematching networks allow an easier design
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RZB06050W
FO-57C
711Dfi2fci
T-33-09
RZB06050W
transistor B42
Transistor 2TD
476 capacitor
100B102KP50X
capacitor 476
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deflexion coil
Abstract: transistor NTC 1,0 ntc 470 15 what is vertical deflection ntc 310 AE67/T9 deflection Bridge AEF1062 AEF1080 NEC+k+2134+transistor
Text: Deflection units Deflection unit for the 110° colour TV picture tube A 66-500 X Inline tube 20 AX Type AEF1080 Vertical deflection coils Horizontal deflection colls ¿H mH ÄH Q SHMM A Lm mH Ä V 3) Q A/ m m A R/NTCCombination Q 1,11 ±4% 1,15± 10% 6,34
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AEF1080
AEF71
AEF1062
deflexion coil
transistor NTC 1,0
ntc 470 15
what is vertical deflection
ntc 310
AE67/T9
deflection Bridge
NEC+k+2134+transistor
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QVB11434
Abstract: Apertures
Text: B [ TECHNOLOGIES Slotted Optical Switch QVB Series With Wires DESCRIPTION The QVB series of switches with wires attached is designed to allow the user maximum flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN phototransistor
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74bbfion
74bbflSl
QVB11433
QVB21413
QVB21414
QVB11434
Apertures
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TRANSISTOR BC 534
Abstract: transistor bc 537 TR BC 237 B transistor bc 488 transistor 537 b 360 transistor bc 630 transistor BC682 TRANSISTOR BC 431 BC526 BC682
Text: fia DE|b[m?flfl OODDbSb ‘ï I 6091788 MICRO ELECTRONIC S C O R P - — Û2D 00656 D TYPE NO. V CE SAT H lFE CASE Pd ImW) 'c (A) V CEO (V) *T min Cob COMPLE max max M EN TARY (Vi 'c max *C (mA) V CE min (V) (A) (MHz) (pF) TYPE 432 440 441 445 446 P
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O-92F
10CKD
to-02
melf-002.
melf-006
to-237
MT-12
Sto/s-20
TRANSISTOR BC 534
transistor bc 537
TR BC 237 B
transistor bc 488
transistor 537 b 360
transistor bc 630
transistor BC682
TRANSISTOR BC 431
BC526
BC682
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Untitled
Abstract: No abstract text available
Text: NPN Photo Transistor TPS610 A pplications • PhotoSensor • Photoelectric Counter • Various Kinds of Readers * Position Detection • Remote Controls Features • 05mm Epoxy Resin Package » High Sensitivity: lL= 250|iA Typ. • Half Value Angle: QVi = ± 8° (Typ.)
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TPS610
TLN110
TLN205
98-4LED
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