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    TRANSISTOR 5C Search Results

    TRANSISTOR 5C Result Highlights (5)

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    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 5C Datasheets Context Search

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    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    SMD TRANSISTOR MARKING 5c

    Abstract: SMD TRANSISTOR MARKING 5c npn smd transistor 5c smd transistor 5c sot-23 5C smd CMBT4124 5c smd transistor transistor 5c smd package
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT4124 GENERAL PURPOSE TRANSISTOR N–P–N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBT4124 = 5C Pin configuration 1 = BASE


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    ISO/TS16949 OT-23 CMBT4124 C-120 SMD TRANSISTOR MARKING 5c SMD TRANSISTOR MARKING 5c npn smd transistor 5c smd transistor 5c sot-23 5C smd CMBT4124 5c smd transistor transistor 5c smd package PDF

    SMD TRANSISTOR MARKING 5c

    Abstract: smd transistor 5c smd transistor 5c sot-23 SMD TRANSISTOR MARKING 5c npn 5C smd transistor 5c smd package CMBT4124 transistor marking SA p sot-23
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4124 GENERAL PURPOSE TRANSISTOR N–P–N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBT4124 = 5C Pin configuration


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    OT-23 CMBT4124 C-120 SMD TRANSISTOR MARKING 5c smd transistor 5c smd transistor 5c sot-23 SMD TRANSISTOR MARKING 5c npn 5C smd transistor 5c smd package CMBT4124 transistor marking SA p sot-23 PDF

    marking 5B

    Abstract: No abstract text available
    Text: BC807 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BC807-25 5B BC807-40 5C SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS


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    BC807 BC807-25 BC807-40 OT-23 BC817 OT-23 marking 5B PDF

    Untitled

    Abstract: No abstract text available
    Text: CMBT4124 GENERAL PURPOSE TRANSISTOR N -P -N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm M arking CMBT4124 = 5C 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.4 _K02 0.89* 0.60 0.40 2.00_ 1.80 ABSOLUTE MAXIMUM RATINGS


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    CMBT4124 PDF

    smd transistor 5c sot-23

    Abstract: SMD TRANSISTOR MARKING 5c smd transistor 5c ts 4141 TRANSISTOR smd transistor marking SA p sot-23 smd transistor 5c p SMD TRANSISTOR MARKING 5c npn SA sot-23 smd transistor 5c l SMD MARKING 5c npn
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4124 GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking CMBT4124 = 5C Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS


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    OT-23 CMBT4124 C-120 smd transistor 5c sot-23 SMD TRANSISTOR MARKING 5c smd transistor 5c ts 4141 TRANSISTOR smd transistor marking SA p sot-23 smd transistor 5c p SMD TRANSISTOR MARKING 5c npn SA sot-23 smd transistor 5c l SMD MARKING 5c npn PDF

    PH2735

    Abstract: No abstract text available
    Text: Aß Linear Power Transistor PH2735-5CE 5 Watts, 2.70-3.50 GHz Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB Operation Common Emitter Configuration Internal Input and Output Impedance Matching


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    PH2735-5CE PH2735 PDF

    CQ 629

    Abstract: No abstract text available
    Text: DTC323TS Digital transistor, NPN, with 1 resistor Features Dimensions Units : mm • available in SPT (SC-72)package • in addition to standard features of digital transistor, this transistor has: DTC323TS (SPT) — low collector saturation voltage, typically, VCE(sat) = 40 mV for


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    DTC323TS SC-72 DTC323TS 100-C CQ 629 PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: CRO CL117 NPN SILICON TRANSISTOR TO-92F LEAD FORM to MELF-002 DESCRIPTION CL117 is NPN silicon planar transistor designed for general purpose high voltage and video amplifier application. \ , I 1 1 J 7 * 2 * 0 .3 0 _ // >i í \ l |5C 8fQ tg >| ^ * 2 .04 <01 >


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    CL117 CL117 O-92F MELF-002) 100mA 625mW 20MHz 300//S, Jul-98 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMBT4124 GENERAL PURPOSE TRANSISTOR N -P-N transistor PACKAGE OU TLINE DETAILS A LL DIM ENSIONS IN mm M arking CMBT4124 = 5C _3,0_ 2.8 0.14 0.09 0.48 038 0.70 0.50 3 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.4 11.4 1.2 R0.1 .004 " _1 .02 _


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    CMBT4124 PDF

    2SC3827

    Abstract: marking t54 S2LB
    Text: SILICON TRANSISTOR 2SC3827 UHF OSILLATOR NPN SILICON EPITAXIAL TRANSISTOR " M IN I M O L D " DESCRIPTION PACKAGE DIMENSIONS The 2SC3827 is an NPN silicon epitaxial transistor intended fo r use as in m illim e ter* UHF oscillator in a tuner o f a TV receiver.


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    2SC3827 2SC3827 marking t54 S2LB PDF

    Siemens 1736

    Abstract: 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312
    Text: 2SC D m ISIEG 023SbQS Q0Q4312 ì NPN Silicon Planar Transistor SIEMENS AKTIEN6ESELLSCHAF BCY66 $12 BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for


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    0235bG5 Q004312 BCY66 Q60203-Y66 TcaseS45Â fi23Sb05 Q0QM31? 120Hz Siemens 1736 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMBT4124 GENERAL PURPOSE TRANSISTOR N -P -N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm M ark in g CM BT4124 = 5C 3.0 2.8 0.14 0.48 1 0.38 Ii 3 Pin configuration 1 I I1 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1.02 0.89" 0.60 0.40 2.00 1.80


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    CMBT4124 BT4124 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC 1927 is an NPN silicon epitaxial dual transistor that


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    2SC1927 2SC1275, PDF

    power Junction FET advantages and disadvantages

    Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
    Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor


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    ED-19, 5966-3084E power Junction FET advantages and disadvantages 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet PDF

    transistor bf 979

    Abstract: Q62702-F610 C12B pnp vhf transistor
    Text: ^ I 5SE D • . . flE3SbDS 0GG45fl4 T ■ SIEG PIMP Silicon Planar Transistor BF 979 S SIEMENS AK TI EN GES ELL SCH AF 5C 04584 D - BF 97 9 S is a PNP silicon planar transistor in low-capacitance plastic package similar to TO 119 50 B 3 DIN 41867 .


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    fl235bOS Q62702-F610 25i02 160ansistion transistor bf 979 Q62702-F610 C12B pnp vhf transistor PDF

    2SB0709A

    Abstract: 2SB709A 2SD0601A 2SD601A UP04601
    Text: Composite Transistors UP04601 Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) Unit: mm 0.20+0.05 –0.02 (0.30) • Features ■ Basic Part Number of Element 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20) • Two elements incorporated into one package (Each transistor is


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    UP04601 2SB0709A 2SB709A 2SD0601A 2SD601A UP04601 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor BUK552-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


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    BUK552-60A/B BUK552 T0220ABate1re BUK552-60A/B PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK562-60A Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for


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    BUK562-60A SQT404 BUK562-60A tina14 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E J> bt.53^31 002A730 253 APX BFS23A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran­


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    002A730 BFS23A 175MHz 00Bfl73t> PDF

    8ch pnp DARLINGTON TRANSISTOR ARRAY

    Abstract: pnp DARLINGTON TRANSISTOR ARRAY ULN* PNP transistor array PNP DARLINGTON SINK DRIVER pnp darlington array m54586p pnp darlington array ULN uln2803 to drive 7 segment display ULS2003H nec pa2003c
    Text: [ 1 ] Product Code Index [ 1 ] Product Code Index 1. IFD Family Tree Inter-Face Driver S-Driver Series TD62Sx×× Transistor-Array Series Monolithic Array Series Bipolar Transistor Array TD62××× or ULN/ULQ 2xxx DMOS Transistor Array TB62××× Multi-Chip IC Type MCT array


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    TD62S× TD62M× TD62C× TB62/TD/ULN/ULQ D62598AP TD62601P TD62602P TD62603P TD62604P TD62703P 8ch pnp DARLINGTON TRANSISTOR ARRAY pnp DARLINGTON TRANSISTOR ARRAY ULN* PNP transistor array PNP DARLINGTON SINK DRIVER pnp darlington array m54586p pnp darlington array ULN uln2803 to drive 7 segment display ULS2003H nec pa2003c PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK542-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack


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    BUK542-60A/B BUK542 -SOT186 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMLT5554 SURFACE MOUNT SILICON DUAL, COMPLEMENTARY HIGH VOLTAGE TRANSISTOR w w w. c e n t r a l s e m i . c o m The CENTRAL SEMICONDUCTOR CMLT5554 consists of one 2N5551 NPN silicon transistor and one individual isolated complementary 2N5401 PNP silicon transistor, manufactured by the epitaxial planar process


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    CMLT5554 2N5551 2N5401 OT-563 100MHz 12-February PDF