oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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BFG135 amplifier
Abstract: BFG135 BFG135 - BFG135 MBB300
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor
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BFG135
OT223
CGY2020G
SCA50
647021/1200/01/pp12
BFG135 amplifier
BFG135
BFG135 - BFG135
MBB300
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BFR540
Abstract: MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1995 September 1999 Aug 23 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR540 The transistor is encapsulated in a
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BFR540
BFR540
125006/03/pp16
MSB003
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5B smd transistor data
Abstract: smd transistor marking 5B 5B SMD TRANSISTOR smd transistor 5B CMBT4123
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT4123 GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking CMBT4123 = 5B PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE
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ISO/TS16949
OT-23
CMBT4123
C-120
5B smd transistor data
smd transistor marking 5B
5B SMD TRANSISTOR
smd transistor 5B
CMBT4123
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BFG35
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
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BFG35
OT223
MSB002
OT223.
125006/03/pp16
BFG35
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BFG198
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a
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BFG198
OT223
MSB002
OT223.
CGY2020G
SCA50
647021/1200/01/pp12
BFG198
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5B smd transistor data
Abstract: 5B SMD TRANSISTOR smd transistor 5B CMBT4123
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4123 GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking CMBT4123 = 5B PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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OT-23
CMBT4123
C-120
5B smd transistor data
5B SMD TRANSISTOR
smd transistor 5B
CMBT4123
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BUJ103AX
Abstract: BP317 BU1706AX
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
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BUJ103AX
SCA60
135104/240/02/pp12
BUJ103AX
BP317
BU1706AX
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BP317
Abstract: BU1706AX BUJ204AX
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
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BUJ204AX
SCA60
135104/204/02/pp12
BP317
BU1706AX
BUJ204AX
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
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BUJ103A
O220AB
SCA60
135104/240/02/pp12
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BUJ204A
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for
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BUJ204A
O220AB
SCA60
135104/240/02/pp12
BUJ204A
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str 6707
Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.
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M3D067
BF859
O-202
MBH794
O-202)
SCA63
115002/00/03/pp8
str 6707
philips 23
2108 npn transistor
ic str 6707
TO-202 transistor NPN
BF859
BP317
D-20097
transistor d 2333
philips ltd 202
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marking 5B
Abstract: No abstract text available
Text: BC807 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BC807-25 5B BC807-40 5C SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS
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BC807
BC807-25
BC807-40
OT-23
BC817
OT-23
marking 5B
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transistor bfr96
Abstract: BFR96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola
Text: MOTOROLA Order this document by BFR96/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state–of–the–art microwave transistor chip which features fine–line geometry, ion–implanted arsenic emitters and gold
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BFR96/D
BFR96
BFR96
BFR96/D*
DEVICEBFR96/D
transistor bfr96
BFR964
RF NPN POWER TRANSISTOR 3 GHZ 200 watts
motorola J50
datasheet for transistor bfr96
BFR96 TRANSISTOR
BFR961
RF TRANSISTOR 1.5 GHZ
BFR96 motorola
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5B smd transistor data
Abstract: transistor marking SA p sot-23 5B SMD TRANSISTOR smd transistor 5B smd transistor 5b sot-23 5b transistor smd ts 4141 TRANSISTOR smd smd transistor marking 5b transistor smd 5B SA SOT-23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4123 GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking CMBT4123 = 5B Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS
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OT-23
CMBT4123
C-120
5B smd transistor data
transistor marking SA p sot-23
5B SMD TRANSISTOR
smd transistor 5B
smd transistor 5b sot-23
5b transistor smd
ts 4141 TRANSISTOR smd
smd transistor marking 5b
transistor smd 5B
SA SOT-23
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BFW17A
Abstract: bfw17a philips semiconductor lem HA
Text: NPN 1 GHz wideband transistor 5bE T> m PHI! IPS INTERNATIONAL DESCRIPTION ^ '" ^ 3 3 BFW17A 711Dfl2b GOMbOEB Mfc.3 « P H I N PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case. The transistor has extremely good
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BFW17A
711Dfl2b
D04fc
0D4b025
BFW17A
bfw17a philips semiconductor
lem HA
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SQD65BB75
Abstract: sqd65B
Text: TRANSISTOR M O D U L E non -ISOLATED TYPE SQP65BB75 S Q D 6 5B B is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • VCbo= 750V, lc = 65A • Suitable for Resonance circuit applications.
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SQP65BB75
SQD65BB75
00DEE22
SQD65BB75
sqd65B
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TRANSISTOR ph 618
Abstract: transistor 911 TRANSISTOR 618 BFQ33C 1383 transistor BFQ33 transistor 1005 2G
Text: Philips Semiconductors Product specification BFQ33C NPN 12 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE ]> 711DÔ5t. G0H543T 5b7 • P H I N PINNING NPN transistor in hermetically-sealed, sub-miniature, SOT173 and SOT173X micro-stripline envelopes, primarily
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OT173
OT173X
BFQ33C
G0H543T
figure076
711DfiEfci
TRANSISTOR ph 618
transistor 911
TRANSISTOR 618
BFQ33C
1383 transistor
BFQ33
transistor 1005 2G
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BFQ108
Abstract: BFQ10 SOT122A 45005B
Text: Philips Sem iconductors Product specification - PNP 4 GHz wideband transistor pHILIPS INTERNATIONAL DESCRIPTION 5bE ]> 3 3 -/7 BFQ108 711GÖEb DD4S5S3 fllfl • PHIN PINNING The BFQ108 is a high output voltage PNP transistor in a SOT122A envelope, primarily Intended for use
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BFQ108
711Gfl2b
BFQ108
OT122A
45005B)
BFQ10
SOT122A
45005B
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Untitled
Abstract: No abstract text available
Text: -T~35>~OS MSB11900Y M AINTENANC E TYPE PHILIPS i n t e r n a t i o n a l 5bE D • 7110aEb ÜDMbBBß b37 H P H I N - PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor tw o transistor sections intended fo r use in m ilitary and professional applications. It operates only in pulsed conditions and is recommended fo r IFF applications at 1.0 9MHz.
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MSB11900Y
7110aEb
2x1000
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TRansistor L 701
Abstract: vmk 5 pin BUK995-60A
Text: Philips Components Data sheet Preliminary specif ication status date of issue March 1991 9 0 BUK995-60A PowerMOS transistor Logic Level SensorFET 5bE D PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode logic level field-effect power transistor in a 5 pin plastic
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OT263
BUK995-60A
004M7b5
TRansistor L 701
vmk 5 pin
BUK995-60A
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BFR96
Abstract: BFR96 philips Transistor 933 Transistor s44 transistor bfr96 transistorbfr96
Text: Philips Semiconductors Product specification - 3 /- . Z 3 NPN 5 GHz wideband transistor DESCRIPTION 711002b 004577b 1A7 • P H I N 5bE D PHILIPS INTERNATIONAL BFR96 PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as
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ON4487)
BFQ32.
BFR96
711DflSb
r-31-23
711Dfl2b
BFR96
BFR96 philips
Transistor 933
Transistor s44
transistor bfr96
transistorbfr96
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2322-712
Abstract: BFG134 LC 3524 philips resistor 2322 763 2222 372 TAG 453 665 800 2222 379 2322 712 fr 253/30 r h a 431 transistor
Text: Product specification Philips Semiconductors T ^ 3 3 -a s NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION BFG134 VllOBSb □04S20l4 4ôb M P H I N 5bE D PINNING NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for
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OT103
33-OS
BFG134
Q04S2014
OT103.
2322-712
BFG134
LC 3524
philips resistor 2322 763
2222 372
TAG 453 665 800
2222 379
2322 712
fr 253/30 r
h a 431 transistor
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BFQ268
Abstract: No abstract text available
Text: Philips Semiconductors_ ,—. 7^ 3 3 - 0 5 - NPN 1 GHz video transistor PH ILIPS INTERNATIONAL DESCRIPTION Product specification - BFQ268; BFQ268/1 5bE D • 7 1 1 D flP b OOMShS? 344 « P H I N PINNING NPN silicon epitaxial transistor with
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BFQ268;
BFQ268/1
711002t)
BFQ268
OT172A1)
BFQ268/I
OT172A3
BFQ268/I
004SbbD
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