BLV25
Abstract: 702 P TRANSISTOR br 2222 npn MGP303 MGP304
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV25 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV25 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast transmitters.
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BLV25
BLV25
702 P TRANSISTOR
br 2222 npn
MGP303
MGP304
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TRIMMER cap no-2222 809 07015
Abstract: 702 P TRANSISTOR BLV25 702 TRANSISTOR transistor Common Base configuration transistor w 04 59 VHF transmitter circuit rf transmitter* vhf philips blv25
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV25 VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor BLV25 DESCRIPTION FEATURES N-P-N silicon planar epitaxial
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BLV25
SC08a
TRIMMER cap no-2222 809 07015
702 P TRANSISTOR
BLV25
702 TRANSISTOR
transistor Common Base configuration
transistor w 04 59
VHF transmitter circuit
rf transmitter* vhf
philips blv25
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BLF2022-70
Abstract: BLF2047 ACPR10
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Preliminary specification 2000 Sep 21 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2022-70 PINNING FEATURES • High power gain
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M3D379
BLF2022-70
125002/04/pp10
BLF2022-70
BLF2047
ACPR10
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BLV57
Abstract: mexico Ceramic capacitor 105 RF push pull power amplifier UHF POWER TRANSISTOR MGP365
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV57 UHF linear push-pull power transistor Product specification Supersedes data of August 1986 1998 Feb 09 Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV57 PINNING - SOT161A
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BLV57
OT161A
SCA57
125108/00/02/pp24
BLV57
mexico Ceramic capacitor 105
RF push pull power amplifier
UHF POWER TRANSISTOR
MGP365
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Product specification Supersedes data of 2002 May 17 2002 Jul 04 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-70 PINNING - SOT502A
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M3D379
BLF2022-70
OT502A
SCA74
613524/04/pp12
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smd L19
Abstract: MGU538
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-90 UHF power LDMOS transistor Product specification Supersedes data of 2001 Mar 22 2002 Sep 09 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-90 PINNING - SOT502A
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M3D379
BLF2022-90
BLF2022-90
OT502A
MBK394
SCA74
613524/02/pp12
smd L19
MGU538
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4S2/4330
Abstract: smd capacitor philips 37281 4S2/4330 030 36301 CAP tantal SMD 4330 030 36 ferroxcube CHIP TANTAL CAP Philips 2222 capacitor BLF2022-70
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Product specification Supersedes data of 2000 Oct 04 2001 Nov 27 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-70 FEATURES PINNING
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M3D379
BLF2022-70
SCA73
613524/02/pp12
4S2/4330
smd capacitor philips
37281
4S2/4330 030 36301
CAP tantal SMD
4330 030 36 ferroxcube
CHIP TANTAL CAP
Philips 2222 capacitor
BLF2022-70
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BLF2022-70
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Product specification Supersedes data of 2001 Nov 27 2002 May 17 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-70 PINNING - SOT502A
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M3D379
BLF2022-70
OT502A
SCA74
613524/03/pp12
BLF2022-70
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-90 UHF power LDMOS transistor Product specification Supersedes data of 2002 Sep 09 2003 Feb 24 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-90 FEATURES PINNING - SOT502A
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M3D379
BLF2022-90
BLF2022-90
OT502A
15-Aug-02)
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smd transistor marking C14
Abstract: TRANSISTOR SMD MARKING CODE w2 smd TRANSISTOR code marking w2 smd code marking C8 all transistor book
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Product specification Supersedes data of 2002 Jul 04 2003 Feb 24 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-70 FEATURES PINNING - SOT502A
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M3D379
BLF2022-70
BLF2022-70
OT502A
15-Aug-02)
smd transistor marking C14
TRANSISTOR SMD MARKING CODE w2
smd TRANSISTOR code marking w2
smd code marking C8
all transistor book
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BLF2022-70
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Product specification Supersedes data of 2002 Jul 04 2003 Feb 24 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-70 FEATURES PINNING - SOT502A
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M3D379
BLF2022-70
OT502A
SCA75
613524/05/pp12
BLF2022-70
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BLF2022-90
Abstract: BLF2022S-90 MBL105
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF2022-90; BLF2022S-90 UHF power LDMOS transistor Product specification Supersedes data of 2003 Feb 24 2003 Jun 13 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-90; BLF2022S-90
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M3D379
M3D461
BLF2022-90;
BLF2022S-90
SCA75
613524/04/pp12
BLF2022-90
BLF2022S-90
MBL105
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4S2/4330
Abstract: BLF2022-90
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-90 UHF power LDMOS transistor Product specification Supersedes data of 2002 Sep 09 2003 Feb 24 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-90 FEATURES PINNING - SOT502A
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M3D379
BLF2022-90
OT502A
SCA75
613524/03/pp12
4S2/4330
BLF2022-90
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BLF2047
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2047 UHF power LDMOS transistor Product specification Supersedes data of 1999 Jul 01 1999 Dec 02 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047 FEATURES PINNING • High power gain
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M3D379
BLF2047
125002/04/pp12
BLF2047
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2SC5414
Abstract: TA-102
Text: Ordering number:ENN5910 NPN Epitaxial Planar Silicon Transistor 2SC5414 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions • High gain : S21e =9.5dB typ f=1GHz . · High cutoff frequency : fT=6.7GHz typ. 2 unit:mm 2004B [2SC5414]
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ENN5910
2SC5414
2004B
2SC5414]
2SC5414
TA-102
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE bbS3^31 D0Efle 4cJ m BLV25 D IAPX V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast transmitters. Features: • internally matched input fo r wideband operation and high power gain;
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BLV25
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blv 33 transistor
Abstract: BLV25 rf 2222 vp1020 multilayer
Text: N AMER PHILIPS/DISCRE TE bTE » • bbS3<i31 ÜÜEflc Mcl l'il BLV25 I V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily for use in v.h.f.-f.m . broadcast transmitters. Features: • internally matched input for wideband operation and high power gain;
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BLV25
blv 33 transistor
BLV25
rf 2222
vp1020
multilayer
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BLV57
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE fciTE D • bb53T31 002^050 bb2 BLV57 U.H.F. LINEAR PUSH-PULL POWER TRANSISTOR Two n-p-n silicon planar epitaxial transistor sections in one envelope to be used as push-pull amplifier, prim arily intended fo r use in linear u.h.f. television transmitters and transposers.
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bb53T31
BLV57
BLV57
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271 Ceramic Disc Capacitors
Abstract: TRIMMER cap no-2222 809 07015 BLV25 MJ5015 rf 2222 702 P TRANSISTOR 7z08
Text: 41E D PHILIPS INTERNATIONAL • 7110ÖSb DÜS71ÛQ b H P H I N BLV25 T -3 3 -IS V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily for use in v.h,f,-f.m . broadcast transmitters. Features:. • internally matched input for wideband operation and high power gain;
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DDS71Ã
BLV25
T-33-IS
271 Ceramic Disc Capacitors
TRIMMER cap no-2222 809 07015
BLV25
MJ5015
rf 2222
702 P TRANSISTOR
7z08
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2N335
Abstract: ScansUX7
Text: TYPE 2N335 N-P-N GROWN-JUNCTION SILICON TRANSISTOR BU LL ET IN NO. DL-S 591038. M AR C H 1959 Beta From 36 to 90 Specifically designed for high gain at high temperatures m echanical data Welded case with glass-to-metal hermetic seal between case and leads. Unit weight is approximately
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2N335
100-H
7S222
ScansUX7
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2n333
Abstract: No abstract text available
Text: TYPE 2N333 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U LL E T IN NO. DL-S 591036, M AR C H 1959 Beta From 18 to 40 Specifically designed for high gain at high temperatures mcchanical data Welded case with glass-to-metal hermetic seal between case and leads. Ln it weight is approximately
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2N333
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Untitled
Abstract: No abstract text available
Text: TYPE 2N334 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T IN NO . D L -S 591037, M A R C H 1959 Beta From 18 to 90 Specifically designed for high gain at high temperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. Unit weight is approximately
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2N334
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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