TRANSISTOR 50 MHZ Search Results

TRANSISTOR 50 MHZ Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 50 MHZ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: LDMOS RF Power Transistor 50 Watts, 800-1000 MHz, 26 Volts LD0810-50 LD0810-50 Preliminary Specifications LDMOS RF Power Transistor 50 Watts, 800-1000 MHz, 26V Features • • • • • • • Outline Drawing New LDMOS Technology Broadband Class AB Operation	Original	PDF	LD0810-50 -30dBc
transistor BV-1 501 Abstract: smd 501 transistor C5750X7R1H106M 30RF35 BLF6G38-50 BLF6G38LS-50 RF35 VJ1206Y104KXB Text: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 01 — 12 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1.	Original	PDF	BLF6G38-50; BLF6G38LS-50 ACPR885k ACPR1980k BLF6G38-50 BLF6G38LS-50 transistor BV-1 501 smd 501 transistor C5750X7R1H106M 30RF35 RF35 VJ1206Y104KXB
Untitled Abstract: No abstract text available Text: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 02 — 1 June 2010 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance	Original	PDF	BLF6G38-50; BLF6G38LS-50 ACPR885k ACPR1980k BLF6G38-50
30RF35 Abstract: BLF6G38-50 BLF6G38LS-50 C5750X7R1H106M RF35 VJ1206Y104KXB Text: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 02 — 1 June 2010 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance	Original	PDF	BLF6G38-50; BLF6G38LS-50 ACPR885k ACPR1980k BLF6G38-50 30RF35 BLF6G38LS-50 C5750X7R1H106M RF35 VJ1206Y104KXB
HF250-50 Abstract: ASI10615 250WPEP Text: HF250-50 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 0.550 4L FLG The ASI HF250-50 is a 50 V epitaxial silicon NPN transistor, designed for SSB communications. E FEATURES: • PG = 14 dB min. at 250 W/30 MHz • IMD3 = 150 dBc max. at 250 W PEP	Original	PDF	HF250-50 HF250-50 ASI10615 ASI10615 250WPEP
Untitled Abstract: No abstract text available Text: HF250-50 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 0.500 4L FLG The ASI HF250-50 is a 50 V epitaxial silicon NPN transistor, designed for SSB communications. .112x45° L A E FULL R FEATURES: C Ø.125 NOM. C • PG = 14 dB min. at 250 W/30 MHz	Original	PDF	HF250-50 HF250-50 112x45° 84ONETEST
HF220-50 Abstract: ASI10614 Text: HF220-50 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF220-50 is a 50 V epitaxial silicon NPN transistor, designed for SSB communications. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 13 dB Typical at 220 W/30 MHz • IMD3 = -30 dBc Max. at 220 W PEP	Original	PDF	HF220-50 HF220-50 112x45° ASI10614
BUH51 Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 UHC-400 Text: ON Semiconductor BUH51 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS The BUH51 has an application specific state–of–art die designed for use in 50 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large	Original	PDF	BUH51 BUH51 r14525 BUH51/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105 UHC-400
BUH51 Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 Text: ON Semiconductort BUH51 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS The BUH51 has an application specific state–of–art die designed for use in 50 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large	Original	PDF	BUH51 BUH51 r14525 BUH51/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Untitled Abstract: No abstract text available Text: ON Semiconductor BUH51 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS The BUH51 has an application specific state−of−art die designed for use in 50 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large	Original	PDF	BUH51 BUH51
Untitled Abstract: No abstract text available Text: KST5086/5087 PNP EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit -50 -50 -3 -50 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage	Original	PDF	KST5086/5087 OT-23 KST5086 KST5087 KST5087
transistor 502 Abstract: Rogers 4350B 4350B BLD6G21L-50 BLD6G21LS-50 Doherty amp doherty combiner 2110 transistor BLD6G22L-150BN/2 BLD6G22LS-50,112 Text: BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 02 — 18 March 2010 Objective data sheet 1. Product profile 1.1 General description The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using	Original	PDF	BLD6G22L-50; BLD6G22LS-50 BLD6G22L-50 BLD22LS-50 BLD6G22LS-50 transistor 502 Rogers 4350B 4350B BLD6G21L-50 BLD6G21LS-50 Doherty amp doherty combiner 2110 transistor BLD6G22L-150BN/2 BLD6G22LS-50,112
Untitled Abstract: No abstract text available Text: BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution	Original	PDF	BLD6G21L-50; BLD6G21LS-50 BLD6G21L-50 BLD6G21LS-50
BLD6G21L-50 Abstract: BLD6G21LS-50 4350B Text: BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution	Original	PDF	BLD6G21L-50; BLD6G21LS-50 BLD6G21L-50 BLD6G21LS-50 4350B

smd 501 transistor Abstract: smd transistor 501 BLD6G21LS-50 SOT1130A TD-SCDMA TRANSISTOR 2025 4350B BLD6G21L-50 Rogers 4350B 123J capacitor Text: BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev. 01 — 28 October 2009 Objective data sheet 1. Product profile 1.1 General description The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution	Original	PDF	BLD6G21L-50; BLD6G21LS-50 BLD6G21L-50 BLD6G21LS-50 smd 501 transistor smd transistor 501 SOT1130A TD-SCDMA TRANSISTOR 2025 4350B Rogers 4350B 123J capacitor
BLD6G22L-150BN/2 Abstract: BLD6G22L 4350B capacitor 82j 076MM BLD6G22L-150BN/BLD6G22L Text: BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 3 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using	Original	PDF	BLD6G22L-50; BLD6G22LS-50 BLD6G22L-50 BLD22LS-50 BLD6G22L-150BN/2 BLD6G22L 4350B capacitor 82j 076MM BLD6G22L-150BN/BLD6G22L
smd 501 transistor Abstract: No abstract text available Text: BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 01 — 15 December 2009 Objective data sheet 1. Product profile 1.1 General description The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using	Original	PDF	BLD6G22L-50; BLD6G22LS-50 BLD6G22L-50 BLD22LS-50 BLD6G22LS-50 smd 501 transistor
PB5350 Abstract: transistor marking c y pb5350 PBSS5350Z PNP TRANSISTOR SOT223 PBSS4350Z SC73 pb535 PBSS5350Z,135/NEXPERIA Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS5350Z 50 V low VCEsat PNP transistor Product specification Supersedes data of 2003 Jan 20 2003 May 13 Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350Z FEATURES	Original	PDF	M3D087 PBSS5350Z SCA75 613514/04/pp12 PB5350 transistor marking c y pb5350 PBSS5350Z PNP TRANSISTOR SOT223 PBSS4350Z SC73 pb535 PBSS5350Z,135/NEXPERIA
PB5350 Abstract: PBSS4350Z PBSS5350Z pb535 Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS5350Z 50 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Nov 13 2003 Jan 20 Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350Z FEATURES	Original	PDF	M3D087 PBSS5350Z SCA75 613514/03/pp12 PB5350 PBSS4350Z PBSS5350Z pb535
pb4350 Abstract: pbss4350z PBSS5350Z pb435 Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 PBSS4350Z 50 V low VCEsat NPN transistor Product specification Supersedes data of 2003 Jan 20 2003 May 13 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350Z FEATURES	Original	PDF	M3D087 PBSS4350Z SCA75 613514/03/pp12 pb4350 pbss4350z PBSS5350Z pb435
PB4350 Abstract: PBSS5350Z PBSS4350Z Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 PBSS4350Z 50 V low VCEsat NPN transistor Product specification Supersedes data of 2001 Jul 13 2003 Jan 20 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350Z FEATURES	Original	PDF	M3D087 PBSS4350Z SCA75 613514/02/pp12 PB4350 PBSS5350Z PBSS4350Z
Untitled Abstract: No abstract text available Text: 2N5087 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO=50V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO VcEO Vebo lc Po Tj Tstg 50 50 3 50 625	OCR Scan	PDF	2N5087 625mW 100pA,
amplifier 50 50W Abstract: uhf power transistor 50W UHF TRANSISTOR UHF amplifier module BAL0105-50 50w transistor Text: GAE GREAT AMERICAN ELECTROINCS BAL0105-50 Silicon NPN high power UHF transistor BAL0105-50 transistor assembly is designed for wideband push-pull power, large signal output, and driver amplifier stages in the 100-500 Mhz frequency range. Suitable for use in A, AB, B, C	OCR Scan	PDF	BAL0105-50 OT-161 amplifier 50 50W uhf power transistor 50W UHF TRANSISTOR UHF amplifier module BAL0105-50 50w transistor
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20004 50 Watts, 860 - 900 MHz Cellular Radio RF Power Transistor Description Key Features The 20004 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the860-900 MHz frequency band. It is rated at 50 Watts minimum output power	OCR Scan	PDF	the860-900 200mA

TRANSISTOR 50 MHZ Search Results

TRANSISTOR 50 MHZ Result Highlights (5)

TRANSISTOR 50 MHZ Datasheets Context Search

Untitled

transistor BV-1 501

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30RF35

HF250-50

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HF220-50

BUH51

BUH51

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Untitled

transistor 502

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BLD6G21L-50

smd 501 transistor

BLD6G22L-150BN/2

smd 501 transistor

PB5350

PB5350

pb4350

PB4350

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amplifier 50 50W

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