MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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2SA2160
Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series
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O-220FM
47P4869E
2SA2160
2SA2149
2SC6005
RQW200
rdx100n45
RQA200N03
rqw200n03
RLA130N03
rdx*100n45
2sc6027
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transistor 471A
Abstract: pnp DARLINGTON TRANSISTOR ARRAY avalanche diode SLA4010 471A STA301A pnp darlington array npn darlington array AVALANCHE TRANSISTOR PNP avalanche transistor
Text: Transistor array with built-in avalanche diode SLA4010, STA301A, 371A, 401A, 406A, 413A, 435A, 460C, 471A, 475A, 481A, 485A, SDC03, 04, 0 6 The Darlington transistor chip with a built-in avalanche diode is a planar type monolithic Darlington transistor chip having
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SLA4010,
STA301A,
SDC03,
transistor 471A
pnp DARLINGTON TRANSISTOR ARRAY
avalanche diode
SLA4010
471A
STA301A
pnp darlington array
npn darlington array
AVALANCHE TRANSISTOR
PNP avalanche transistor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic
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DTA143EE
416/SC
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network
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LDTA124EET1
SC-89
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6aa marking
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic
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DTA114YE
416/SC
6aa marking
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CTA4100A
Abstract: No abstract text available
Text: Relays and Timers www.factorymation.com Digital Timers/Counters/Tachometers 6 1/1IN D Part Number Input Voltage Description CTA4000A 100–240VAC Output 1: Transistor/Relay comb. Output 2: Transistor CTA4000D 24VDC Output 1: Transistor/Relay comb. Output 2: Transistor
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CTA4000A
240VAC
CTA4000D
24VDC
CTA4100A
CTA4100D
12VDC
100mA
CTA4100A
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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2SD2402
Abstract: transistor 2sD2402 Transistor Marking EY
Text: DATA SHEET SILICON TRANSISTOR 2SD2402 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2402 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for
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2SD2402
2SD2402
2SB1571
transistor 2sD2402
Transistor Marking EY
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PT 4304 a transistor
Abstract: 2SC3587 noise diode
Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise
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2SC3587
2SC3587
PT 4304 a transistor
noise diode
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transistor 1000V 6A
Abstract: diode 6A 1000v E76102 SQD300AA100 transistor VCE 1000V Ultrasonic moter application transistor 1000V high current darlington transistor SQD300AA120 M6 transistor
Text: TRANSISTOR MODULE SQD300AA100 UL;E76102 M SQD300AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for
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SQD300AA100
E76102
SQD300AA100
SQD300AA120
transistor 1000V 6A
diode 6A 1000v
transistor VCE 1000V
Ultrasonic moter application
transistor 1000V
high current darlington transistor
SQD300AA120
M6 transistor
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Mitsubishi M54564
Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
Text: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide
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A/20V
16P2Z
16pin
225mil
05MIN.
20pin
300mil
20P2N
20P2E
Mitsubishi M54564
M54534
M54571P
m54667p
M54585FP
m54571
M54566FP
16P2N
M54522P equivalent
m54532p
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IC A 3120
Abstract: Transistor AC 51 transistor case To 105 a 3120 ic diode 400A 8A TRANSISTOR M6 transistor SQD400AA120 transistor VCE 1000V SQD400AA100
Text: TRANSISTOR MODULE SQD400AA100 UL;E76102 M SQD400AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for
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SQD400AA100
E76102
SQD400AA100
SQD400AA120
IC A 3120
Transistor AC 51
transistor case To 105
a 3120 ic
diode 400A
8A TRANSISTOR
M6 transistor
SQD400AA120
transistor VCE 1000V
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Vbe 40 transistor
Abstract: SQD300BA60 600v 10A ultra fast recovery diode diode module 6A darlington power transistor 10a fast recovery diode 1a trr 200ns
Text: TRANSISTOR MODULE Hi- SQD300BA60 UL;E76102 M SQD300BA60 is a Darlington power transistor module with a ULTRA HIGH hFE, high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is electrically isolated
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SQD300BA60
E76102
SQD300BA60
200ns)
400mA
Vbe 40 transistor
600v 10A ultra fast recovery diode
diode module 6A
darlington power transistor 10a
fast recovery diode 1a trr 200ns
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BUX45
Abstract: transistor et 460
Text: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection
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CB-19
BUX45
transistor et 460
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2SC3603
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise
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2SC3603
2SC3603
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise
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2SC3603
2SC3603
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC 3587 is an NPN epitaxial transistor designed for lownoise am plification at 0.5 to 6.0 GHz. This transistor has low-noise
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2SC3587
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NEC K 2500
Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150
Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise
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2SC3604
2SC3604
15obots
NEC K 2500
N transistor NEC K 2500
2SC1223
transistor marking S00
2SC2367
NEC marking b
NEC PART NUMBER MARKING
2SC3603
2SC2150
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2SC2150
Abstract: 2SC1223 TRANSISTOR 2sC 5250 2sc3604 micro X
Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise
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2SC3604
2SC3604
2SC3603
2SC2150
2SC1223
TRANSISTOR 2sC 5250
micro X
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE SQD400AA100 SQD400AA10 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for
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SQD400AA100
SQD400AA10
-400A
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transistor NEC D 586
Abstract: nec a 634 NEC D 586 2SC3587 NEC K 2500 NEC 3500
Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise am plification at 0.5 to 6.0 GHz. T his transistor has low-noise
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2SC3587
2SC3587
transistor NEC D 586
nec a 634
NEC D 586
NEC K 2500
NEC 3500
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULES- SQQ300BA60 U L;E 76102 M ) is a Darlington power transistor module with a , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 200ns). The mounting base of the module is electrically isolated
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SQQ300BA60
200ns)
hrEfe750
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TCA 785
Abstract: transistor BUX 48 vu bux BUX41 sonde de temperature
Text: *BUX 41N NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE îfc Preferred device D isp o sitif recom m andé High speed, high current, high power transistor Transistor de puissance rapide, fo r t courant Thermal fatigue inspection
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CB-19
TCA 785
transistor BUX 48
vu bux
BUX41
sonde de temperature
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