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    TRANSISTOR 447 448 Search Results

    TRANSISTOR 447 448 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 447 448 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d 5072 transistor

    Abstract: transistor mc140 817 OPTO-coupler 817 OPTO microprocessor 8255 application seven segment opto 817 MC140 Datasheet IC 8155 8282/8283 eprom 8243
    Text: IC Testers 70 71 72 73 75 76 77 78 81 82 85 86 89 93 94 95 96 97 98 99 101 102 103 106 107 109 110 147 160 161 162 163 174 175 192 193 194 195 VPL-UICTS Universal IC Tester CMOS ICs MC140 : MC140 FEATURES q Tests most of the 6 to 40 pin ICs in DIP package. The list


    Original     		PDF MC140) MC140 8088/8085/Z80/6502) OperatN2003 ULN2004 Delhi-110092. d 5072 transistor transistor mc140 817 OPTO-coupler 817 OPTO microprocessor 8255 application seven segment opto 817 MC140 Datasheet IC 8155 8282/8283 eprom 8243

    cadstar pcb

    Abstract: cadstar shape synario cadstar ALLEGRO PART NUMBER INDEX
    Text: Synario ECS and Board Entry Index A Allegro Add symbol attributes . 3-38 Adding a netlister to a menu . 3-28, 3-41, 3-42 Allegro ECO Changes . 3-49


    Original     		PDF

    INVERTER DESIGN PDF DATASHEET

    Abstract: resistor resistors types of resistors DTD113EK DTD113ES transistor 447 448
    Text: Transistors Digital transistors built-in resistors DTD113EK / DTD113ES FFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow negative biasing of the


    Original     		PDF DTD113EK DTD113ES 96-354-D113E) INVERTER DESIGN PDF DATASHEET resistor resistors types of resistors DTD113ES transistor 447 448

    pin configuration of ic TL084

    Abstract: 8085 microprocessor realtime application uln2004 application note LM324 battery tester LM714 blueflash LM144 LM358 LM311 PIN CONFIGURATION ic moc3021 LM714 Application Note
    Text: IC Testers VPL-AICT LH2211 LH2311 LM2901 LM3302 HA17339 HA17393 HA17901 HA17903 Analog IC Tester Transistor Arrays ULN2001 ULN2002 ULN2003 ULN2004 ULN2005 ULN2064 ULN2065 ULN2066 ULN2067 ULN2068 ULN2069 ULN2074 ULN2075 TD62501 TD62502 TD62503 TD62504 TD62505


    Original     		PDF LH2211 LH2311 LM2901 LM3302 HA17339 HA17393 HA17901 HA17903 ULN2001 ULN2002 pin configuration of ic TL084 8085 microprocessor realtime application uln2004 application note LM324 battery tester LM714 blueflash LM144 LM358 LM311 PIN CONFIGURATION ic moc3021 LM714 Application Note

    Untitled

    Abstract: No abstract text available
    Text: FMBA14 FMBA14 C2 E1 C1 pin #1 B1 B2 E2 SuperSOTä-6 Mark: .1N Dot denotes pin #1 NPN Multi-Chip Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings*


    Original     		PDF FMBA14

    transistor j380

    Abstract: motorola J122 j392 transistor j122 J122 transistor j113 equivalent ic 65 MHZ rf transmitter ON SEMICONDUCTOR J122
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10350 Designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak


    Original     		PDF MRF10350 MRF10350 transistor j380 motorola J122 j392 transistor j122 J122 transistor j113 equivalent ic 65 MHZ rf transmitter ON SEMICONDUCTOR J122

    Untitled

    Abstract: No abstract text available
    Text: bb53^31 0023645 Philips Semiconductors DO1! H A P X Product specification N-channel enhancement mode vertical D-MOS transistor BSP128 N APIER PHILIPS/DISCRETE b?E T> QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching


    OCR Scan     		PDF BSP128 OT223

    Untitled

    Abstract: No abstract text available
    Text: KSR2208 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R e s is to r B uilt In • Switching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R ,= 4 7 K íi, Rj = 22KÍ¡) TO-92S • C om p le m en t to KSR1208


    OCR Scan     		PDF KSR2208 O-92S KSR1208 0G2S011

    transistor 513

    Abstract: 2sc for muting
    Text: Contents Contents Page Introduction 9 Physical configuration of leaded transistors 10 Quality assurance and reliability 11 Quality assurance system 12 Measures for quality assurance 12 Overview of manufacturing processes 13 Glossary of letters and symbols used in this data book


    OCR Scan     		PDF

    1N3220

    Abstract: No abstract text available
    Text: ZE TE X IN C T5 D 95D 0 6 0 5 1 8-bit ¡xP compatible A-D converter ZN447 ZN449 D ZN448 FEATURES DESCRIPTION • Easy Interfacing to microprocessor, or operates as a 'stand-alone' converter • Fast: 9/xs conversion tim e guaranteed • Choice o f linearity: 0.3LS B - Z N 4 4 7 ,


    OCR Scan     		PDF ZN447 ZN449 ZN448 1N3220

    BSP12

    Abstract: BSP128 transistor 447 448
    Text: b b S B T B l 00 23 0 4 5 GOT Philips Sem iconductors IAPX Product specification N-channel enhancement mode vertical D-MOS transistor BSP128 N AHER PHILIPS/DISCRETE FEATURES b?E D Q UICK REFERENCE DATA • Direct interface to C-MO S, TTL, etc. • High-speed switching


    OCR Scan     		PDF BSP128 OT223 BSP12 BSP128 transistor 447 448

    transistor 377

    Abstract: BD376 BD375 bd379
    Text: BD375/377/379 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POW ER LINEAR AND SWITCHING APPLICATIONS • Complement to BD376, BD378 and BD380 respectively A B S O LU T E MAXIMUM RATINGS Symbol Characteristic Collector Base Voltage : BD375 Rating V V V ceo 100 45


    OCR Scan     		PDF BD375/377/379 BD376, BD378 BD380 BD375 BD377 BD379 BD377 transistor 377 BD376 BD375 bd379

    Untitled

    Abstract: No abstract text available
    Text: BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD375, BD377 and BD379 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit -5 0 -7 5 - 100 -4 5 -6 0 -8 0 V V l C ollector Base Voltage


    OCR Scan     		PDF BD376/378/380 BD375, BD377 BD379 O-126 BD376 BD378 BD380

    sgsp230

    Abstract: No abstract text available
    Text: n Z J SGS THOM SON SGSP230 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP230 VDss 450 V ^D S on 3 Í2 Id 2.5 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH VOLTAGE - 450V FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION AT > 100KHz


    OCR Scan     		PDF SGSP230 SGSP230 100KHz OT-82 OT-194

    BUZ326

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE PowerMOS transistor OL.E D • ^53=131 O D l l47Sci T ■ BÜZ326 r - "’ 3 ^ -/3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ326 T0218AA; DD147hS 13UZ326 T-39-13 BUZ326

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bSE T> m bbS3T31 0037637 bTl BRY56 APX PROGRAMMABLE UNIJUNCTION TRANSISTOR Silicon planar PNPN trigger device in a plastic TO-92 envelope, intended fo r use in switching appli­ cations such as motor control, oscillators, relay replacement, timers, pulse shaper etc.


    OCR Scan     		PDF bbS3T31 BRY56 BRY56 bb53T31 DD2764D

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHIL IPS /DI SCRE TE bTE D m bbS3T31 DD3D7SD 711 W A P X Philips Semiconductors Product Specification PowerMOS transistor BUK543-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode


    OCR Scan     		PDF bbS3T31 BUK543-60A/B PINNING-SOT186 BUK543

    3MM LED

    Abstract: IR detector transistor 551 IR LED array nj TRANSISTOR green LED 3mm low 3mm "ir led" diode led ir 3mm photo diode LED 3mm 2ma
    Text: Selector Guide: 3mm IR and L E D Products DESCRIPTION DATA SHEET PAGE s 3mm IR Detector Infra Red Emitter 551-7110 4-7 3mm IR Detector Photo Transistor 551-7610 4-8 3mm IR Detector Photo Diode 551-7710 4-9 551-XX01 4-10 & 4-11 551-XX02 4-12 3mm LED CBI (DIN 41494 compatible)


    OCR Scan     		PDF 551-XX01 551-XX02 551-xx03 3MM LED IR detector transistor 551 IR LED array nj TRANSISTOR green LED 3mm low 3mm "ir led" diode led ir 3mm photo diode LED 3mm 2ma

    Untitled

    Abstract: No abstract text available
    Text: 3 0 e: D ¿ = 7 n 7 e! 2 ci2 3 7 Q Q 2ci c127 S C S -T H O M S O N T H T '— P ' S 0, — Vi f i T r S ^7# RjflH @ilLi gT]»lSÖÖ©i r - SGSP230 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP230 V dss 450 V ^DS(on 30 *D 2.5 A • HIGH SPEED SWITCHING APPLICATIONS


    OCR Scan     		PDF SGSP230 100KHZ SC-0000/1

    Untitled

    Abstract: No abstract text available
    Text: 25E D N AUER PHILIPS/DISCRETE • tb53ci31 002DbbS 1 PowerMOS transistor Fast Recovery Diode FET BUK627-600A BUK627-600B BUK627-600C r - 2 7 - i i GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.


    OCR Scan     		PDF tb53c 002DbbS BUK627-600A BUK627-600B BUK627-600C BUK627 bbS3T31

    BUK543

    Abstract: BUK543-60A BUK543-60B TTA10
    Text: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack


    OCR Scan     		PDF BUK543-60A/B -SOT186 BUK543 DS10NÃ BUK543-60A BUK543-60B TTA10

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor BUK543-60A/B Logic level _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack


    OCR Scan     		PDF BUK543-60A/B BUK543

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON BUV27 FAST NPN SWITCHING TRANSISTOR VERY LOW SATURATION VOLTAGE FAST TURN-O FF AND TURN-ON D E S C R IP T IO N High speed transistor suited for low voltage applica­ tions. High frequency and efficiency converters switching regulators m otor control.


    OCR Scan     		PDF BUV27

    Untitled

    Abstract: No abstract text available
    Text: MULTI CHIP BIPOLAR DIGITAL INTEGRATED CIRCUIT TD62M3600F 3CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M3600F is multi chip driver 1C incorporates 3 low saturation voltage discrete PNP transistors which equipped bias resistor and fly-w heeling diode. FEATURES


    OCR Scan     		PDF TD62M3600F TD62M3600F 300mA 450mA, RN6006)