la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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PDF
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TRANSISTOR 2N 4401
Abstract: transistor 4400 4401 transistor 2N4400 2N4401 4401 NPN 4401 transistor transistor 2n transistor 4401
Text: HN/2N 4400/4401 NPN EPITAXIAL SILICON TRANSISTOR General purpose transistor Collector Emitter Voltage: VCE0 = 40V Collector Dissipation: Pc max = 625mW On special request, these transistors can be manufactured in different pin configurations. Please refer to the “TO-92
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625mW
TRANSISTOR 2N 4401
transistor 4400
4401 transistor
2N4400
2N4401
4401
NPN 4401 transistor
transistor 2n
transistor 4401
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NPN medium power transistor in a SOT package
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UN1596 Preliminary NPN SILICON TRANSISTOR NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR DESCRIPTION The UTC UN1596 are series of NPN silicon planar transistor, which has gain of 500 at IC=100mA.It can be used in such
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UN1596
UN1596
100mA
100mA
UN1596L
UN1596G
UN1596-AA3-R
UN1596L-AA3-R
UN1596G-AA3-R
OT-223
NPN medium power transistor in a SOT package
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UN1596 Preliminary NPN SILICON TRANSISTOR NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR DESCRIPTION The UTC UN1596 are series of NPN silicon planar transistor, which has gain of 500 at IC=100mA.It can be used in such
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UN1596
UN1596
100mA
100mA
UN1596L-AA3-R
UN1596G-AA3-R
OT-223
QW-R207-021
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PDF
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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PDF
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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PDF
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SC15
Abstract: LTE42008R Data Handbook sc15
Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE42008R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 24 Philips Semiconductors Product specification NPN microwave power transistor
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LTE42008R
OT440A
SCA53
127147/00/02/pp12
SC15
LTE42008R
Data Handbook sc15
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CLE, NP80N055DLE, NP80N055ELE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
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NP80N055CLE,
NP80N055DLE,
NP80N055ELE
NP80N055CLE
NP80N055DLE
O-220AB
O-262
O-263
O-220AB)
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MP-25
Abstract: NP80N055CLE NP80N055DLE NP80N055ELE NP80N055KLE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CLE,NP80N055DLE,NP80N055ELE,NP80N055KLE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP80N055CLE
NP80N055DLE
NP80N055ELE
NP80N055KLE
O-262
NP80N055ELE
O-220AB
NP80N055DLE
NP80N055CLE
O-263
MP-25
NP80N055KLE
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d1409
Abstract: MP-25 NP82N055CLE NP82N055DLE NP82N055ELE NP82N055KLE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CLE,NP82N055DLE,NP82N055ELE,NP82N055KLE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP82N055CLE
NP82N055DLE
NP82N055ELE
NP82N055KLE
O-262
NP82N055ELE
O-220AB
NP82N055DLE
NP82N055CLE
O-263
d1409
MP-25
NP82N055KLE
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d1415
Abstract: NP36N055HLE NP36N055ILE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HLE, NP36N055ILE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
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NP36N055HLE,
NP36N055ILE
NP36N055HLE
O-251
O-252
O-251)
d1415
NP36N055HLE
NP36N055ILE
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d1415
Abstract: NP36N055SLE NP36N055HLE NP36N055ILE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HLE, NP36N055ILE, NP36N055SLE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect PART NUMBER Transistor designed for high current switching applications.
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NP36N055HLE,
NP36N055ILE,
NP36N055SLE
NP36N055HLE
NP36N055ILE
O-251
O-252
O-251)
d1415
NP36N055SLE
NP36N055HLE
NP36N055ILE
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CLE, NP82N055DLE, NP82N055ELE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
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NP82N055CLE,
NP82N055DLE,
NP82N055ELE
NP82N055CLE
NP82N055DLE
O-220AB
O-262
O-263
O-220AB)
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D1409
Abstract: MP-25 NP80N055CLE NP80N055DLE NP80N055ELE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CLE, NP80N055DLE, NP80N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP80N055CLE,
NP80N055DLE,
NP80N055ELE
O-262
O-220AB
NP80N055DLE
NP80N055CLE
O-263
O-220AB)
D1409
MP-25
NP80N055CLE
NP80N055DLE
NP80N055ELE
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NP80N055ELE
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CLE, NP80N055DLE, NP80N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP80N055CLE,
NP80N055DLE,
NP80N055ELE
NP80N055CLE
NP80N055DLE
NP80N055ELE
O-220AB
O-262
O-263
O-220AB)
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PDF
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MP-25
Abstract: NP82N055CLE NP82N055DLE NP82N055ELE
Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CLE, NP82N055DLE, NP82N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching
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NP82N055CLE,
NP82N055DLE,
NP82N055ELE
O-262
O-220AB
NP82N055DLE
NP82N055CLE
O-263
MP-25
NP82N055CLE
NP82N055DLE
NP82N055ELE
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HLE, NP36N055ILE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
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NP36N055HLE,
NP36N055ILE
NP36N055HLE
NP36N055ILE
O-251
O-252
O-251)
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CLE, NP82N055DLE, NP82N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP82N055CLE,
NP82N055DLE,
NP82N055ELE
NP82N055CLE
NP82N055DLE
NP82N055ELE
O-220AB
O-262
O-263
O-220AB)
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PDF
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2n4401
Abstract: TRANSISTOR 2N 4401 "cb it" 4400 transistor transistor 4400
Text: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: Veto=40V • Collector Dissipation: pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (T,=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage
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2N4400/4401
625mW
2N4401
lc50mA,
500mA,
100MHz
--100MHz
150mA
TRANSISTOR 2N 4401
"cb it"
4400 transistor
transistor 4400
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NP80N055DLE
Abstract: NP80N055ELE MP-25 NP80N055CLE
Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CLE, NP80N055DLE, NP80N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP80N055CLE,
NP80N055DLE,
NP80N055ELE
O-220AB
MP-25)
O-262
MP-25
NP80N055DLE
NP80N055CLE
NP80N055DLE
NP80N055ELE
NP80N055CLE
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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PDF
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LTE42012R
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE42012R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE42012R FEATURES PINNING - SOT440A • Interdigitated structure provides high emitter efficiency
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LTE42012R
OT440A
SCA53
127147/00/02/pp12
LTE42012R
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LTE42005S
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE42005S NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE42005S FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors provide excellent
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LTE42005S
OT440A
LTE42005S
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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PDF
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