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    TRANSISTOR 400V Search Results

    TRANSISTOR 400V Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    RJP4013ASP-00#J5 Renesas Electronics Corporation IGBT 400V 150A SOP-8 Visit Renesas Electronics Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    RJP4010AGE-00#P5 Renesas Electronics Corporation 400V, 150A, IGBT for Strobe Flash Visit Renesas Electronics Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 400V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    transistor SOT23 4d

    Abstract: MMBTA94L MMBTA94 MMBTA94-AE3-R MMBTA94L-AE3-R MMBTA94G
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PC MAX =350mW * Low collector-Emitter saturation voltage „ APPLICATIONS * Telephone switching


    Original     		PDF MMBTA94 -400V 350mW MMBTA94L MMBTA94G MMBTA94-AE3-R MMBTA94L-AE3-R MMBTA94G-AE3-R OT-23 QW-R206-008 transistor SOT23 4d MMBTA94L MMBTA94 MMBTA94-AE3-R MMBTA94L-AE3-R MMBTA94G

    transistor SOT23 4d

    Abstract: MMBTA94L MMBTA94L-AE3-R MMBTA94 MMBTA94-AE3-R marking 4d
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter Voltage: VCEO=-400V * Collector Dissipation: PC MAX =350mW * Low Collector-Emitter Saturation Voltage „ APPLICATIONS * Telephone Switching


    Original     		PDF MMBTA94 -400V 350mW MMBTA94L MMBTA94G MMBTA94-AE3-R MMBTA94L-AE3-R MMBTA94G-AE3-R OT-23 QW-R206-008 transistor SOT23 4d MMBTA94L MMBTA94L-AE3-R MMBTA94 MMBTA94-AE3-R marking 4d

    TO-92 VCEO400V

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PD MAX =625mW * Low collector-Emitter saturation voltage „ ORDERING INFORMATION Ordering Number


    Original     		PDF MPSA94 -400V 625mW MPSA94L-AB3-R MPSA94G-AB3-R MPSA94L-T92-B MPSA94G-T92-B MPSA94L-T92-K MPSA94G-T92-K MPSA94L-T92-R TO-92 VCEO400V

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBTA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =350mW *Low collector-Emitter saturation voltage 2 1 APPLICATIONS *Telephone switching *High voltage switch


    Original     		PDF MMBTA94 -400V 350mW OT-23 QW-R206-008

    sot23 4d

    Abstract: transistor marking 4D MMBTA94
    Text: UTC MMBTA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =350mW *Low collector-Emitter saturation voltage 2 1 APPLICATIONS *Telephone switching *High voltage switch


    Original     		PDF MMBTA94 -400V 350mW OT-23 QW-R206-008 sot23 4d transistor marking 4D MMBTA94

    PZTA94G-AA3-R

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD PZTA94 Preliminary PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PD MAX =625mW * Low collector-Emitter saturation voltage „ ORDERING INFORMATION Ordering Number


    Original     		PDF PZTA94 -400V 625mW PZTA94L-AA3-R PZTA94G-AA3-R OT-223 QW-R207-026

    MPSA94L

    Abstract: UTC MPSA94L MPSA94
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PD MAX =625mW * Low collector-Emitter saturation voltage Lead-free: MPSA94L Halogen-free: MPSA94G


    Original     		PDF MPSA94 -400V 625mW MPSA94L MPSA94G MPSA94-AB3-R MPSA94-T92-B MPSA94-T92-K MPSA94L-AB3-R MPSA94L-T92-B MPSA94L UTC MPSA94L MPSA94

    transistor SOT23 4d

    Abstract: pnp transistor 300v sot23 pnp low saturation transistor sot23
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES 3 *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: PC MAX =350mW *Low collector-Emitter saturation voltage APPLICATIONS 1 *Telephone switching


    Original     		PDF MMBTA94 -400V 350mW OT-23 MMBTA94L MMBTA94-AE3-6-R MMBTA94L-AE3-6-R OT-23 MMBTA94L-AE3-6-R transistor SOT23 4d pnp transistor 300v sot23 pnp low saturation transistor sot23

    KSA1625

    Abstract: TO-92 VCEO400V
    Text: UTC KSA1625 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92


    Original     		PDF KSA1625 -400V 625mW QW-R201-067 KSA1625 TO-92 VCEO400V

    Untitled

    Abstract: No abstract text available
    Text: UTC MPSA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92


    Original     		PDF MPSA94 -400V 625mW QW-R201-021

    Untitled

    Abstract: No abstract text available
    Text: UTC MPSA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92


    Original     		PDF MPSA94 -400V 625mW

    MPSA94

    Abstract: No abstract text available
    Text: UTC MPSA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92


    Original     		PDF MPSA94 -400V 625mW QW-R201-021 MPSA94

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD PZTA44/45 NPN SILICON TRANSISTOR NPN HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-emitter voltage: VCEO=400V PZTA44 VCEO=350V(PZTA45) * Collector current up to 300mA „ APPLICATION * Telephone switching * High voltage switch


    Original     		PDF PZTA44/45 PZTA44) PZTA45) 300mA PZTA44L-AA3-R PZTA44G-AA3-R PZTA45L-AA3-R PZTA45G-AA3-R OT-223

    transistor 7333

    Abstract: BU426A
    Text: BU426A Power Transistor High Voltage Switching BU426A type is a fast switching high voltage transistor, more specially intended for operating in colour TV supply systems. Features: • Collector-Emitter sustaining voltage VCEO sus = 400V (Minimum) - BU426A.


    Original     		PDF BU426A BU426A BU426A. transistor 7333

    transistor SOT23 4d

    Abstract: MMBTA94 MMBTA94-AE3-R MMBTA94L MMBTA94L-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES 3 *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: PC MAX =350mW *Low collector-Emitter saturation voltage APPLICATIONS 1 2 *Telephone switching *High voltage switch


    Original     		PDF MMBTA94 -400V 350mW OT-23 MMBTA94L MMBTA94-AE3-R MMBTA94L-AE3-R transistor SOT23 4d MMBTA94 MMBTA94-AE3-R MMBTA94L MMBTA94L-AE3-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter Voltage: * VCEO=400V UTC MPSA44 * VCEO=350V (UTC MPSA45) * Collector Current up to 300mA „ ORDERING INFORMATION Ordering Number Lead Free


    Original     		PDF MPSA44/45 MPSA44) MPSA45) 300mA MPSA44L-AB3-R MPSA44G-AB3-R MPSA45L-AB3-R MPSA45G-AB3-R MPSA44L-T92-B MPSA44G-T92-B

    KSP94

    Abstract: PNP 400V KSP44
    Text: KSP94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 • High Collector-Emitter Voltage: VCEO= -400V • Low Collector-Emitter Saturation Voltage • Complement to KSP44 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Collector-Base Voltage


    Original     		PDF KSP94 -400V KSP44 -300V, -400V, -10mA -50mA -100mA -10mA, -50mA, KSP94 PNP 400V KSP44

    MMBTA94

    Abstract: MMBTA94-AE3-R MMBTA94L MMBTA94L-AE3-R MMBTA94G-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES 3 * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PC MAX =350mW * Low collector-Emitter saturation voltage „ APPLICATIONS 2 1 SOT-23 * Telephone switching


    Original     		PDF MMBTA94 -400V 350mW OT-23 MMBTA94L MMBTA94G MMBTA94-AE3-R MMBTA94L-AE3-R MMBTA94G-AE3-R MMBTA94 MMBTA94-AE3-R MMBTA94L MMBTA94L-AE3-R MMBTA94G-AE3-R

    Untitled

    Abstract: No abstract text available
    Text: MPSA44 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. " " TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Package: TO-92 * Complement To MPSA94 * High Collector-Emitter Voltage Vceo=400V * Collector Dissipation Pc=625mA Ta=25<>C


    OCR Scan     		PDF MPSA44 MPSA94 625mA 300uS, 100uA 100mA

    Untitled

    Abstract: No abstract text available
    Text: KSP94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • High Collector-Emitter Voltage: VCEo = - 400V • Low Collector-Emltter Saturation Voltage • Complement to MPSA44 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage


    OCR Scan     		PDF KSP94 MPSA44

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 3512B _ 2SA1786/2SC4646 2SA1786:PNP Epitaxial Planar Silicon Transistor 2SC4646:NFN Triple Diffused Planar Silicon Transistor High Voltage Driver Applications Features • Large current capacity Ic = 2A • High breakdown voltage (Vceo = 400V)


    OCR Scan     		PDF 3512B 2SA1786/2SC4646 2SA1786 2SC4646 2SA1786 12894TH AX-8287/4231MH 5180TA X-6912

    MJ13001

    Abstract: MJ13001A TO-92 VCEO400V VCBo-500V
    Text: FORWARD INTERNATIONAL BLBCIRONTCS LID. MJ13001A SEMICONDUCTOR "" TECHNICAL DATA NPN TRIPLE DIFFUSED SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR * Collector-Emitter Voltage Vceo=400V * Collector Dissipation Pc Max =625 mW (Ta=25°C) ABSOLUTE MAXIMUM RATINGS at Twrib=25°C


    OCR Scan     		PDF MJ13001A 100uA MJ13001 MJ13001A TO-92 VCEO400V VCBo-500V