MJ13001AL
Abstract: No abstract text available
Text: FORW ARD INTERNATIONAL ELECTRONICS LTD, MJ13001AL SEMICONDUCTOR TECHNICAL DATA NPN TRIPLE DIFFUSED SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Package: 10-126 1 i * Collector-Emitter Voltage Vceo=400V * Collector Dissipation Pc Max =lW {Ta=25°C) l ABSOLUTE MAXIMUM RATINGS a t Tamb=25°C
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MJ13001AL
100uA
MJ13001AL
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MJ13001
Abstract: MJ13001A TO-92 VCEO400V VCBo-500V
Text: FORWARD INTERNATIONAL BLBCIRONTCS LID. MJ13001A SEMICONDUCTOR "" TECHNICAL DATA NPN TRIPLE DIFFUSED SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR * Collector-Emitter Voltage Vceo=400V * Collector Dissipation Pc Max =625 mW (Ta=25°C) ABSOLUTE MAXIMUM RATINGS at Twrib=25°C
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MJ13001A
100uA
MJ13001
MJ13001A
TO-92 VCEO400V
VCBo-500V
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MJ13001
Abstract: MJ13001AL mj1300 MJ13001A SS TRANSISTOR VCBo-500V VCEO400V VCEO-400V
Text: MJ13001AL SEM ICO N DU CTO R FOKWAKD INTERNATIONAL E L E C ntO N K S L ID . " " TECHNICAL DATA NPN IIOPLE DIFFUSED SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Package: TO-126 * Collector-Emitter Voltage Vceo=400V * Collector Dissipation Pc Max =lW (Ta=25°C)
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MJ13001AL
O-126
100uA
100uA
MJ13001
MJ13001AL
mj1300
MJ13001A
SS TRANSISTOR
VCBo-500V
VCEO400V
VCEO-400V
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Untitled
Abstract: No abstract text available
Text: MJ13001A SEMICONDUCTOR _ TECHNICAL DATA NPN TRIPLE DIFFUSED SILICON TRANSISTOR fflGH VOLTAGE TRANSISTOR * Collector-Emitter Voltage Vceo=400V * Collector Dissipation Pc Max =625 mW (Ta=25“C) ABSOLUTE MAXIMUM RATINGS at Tamb=25°C C haracteristic Symbol R ating
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MJ13001A
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