PBSS5250T
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5250T 50 V, 2 A PNP low VCEsat BISS transistor Product specification 2003 Oct 09 Philips Semiconductors Product specification 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250T QUICK REFERENCE DATA FEATURES
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M3D088
PBSS5250T
SCA75
R75/01/pp7
PBSS5250T
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2sa1929
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1929 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Mitsubishi 2SA1929 is a silicon PNP epitaxial type transistor. It is designed for
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2SA1929
2SA1929
-100V
300mA,
100Hz)
110mV
270Hz
X10-3
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BCX71G
Abstract: MMBT5086 FLS SOT 23
Text: SA MS UN G SEM ICONDUCTOR INC IME D | 7 ^ 4 1 4 5 0007554 2 | PNP EPITAXIAL SILICON TRANSISTOR BCX71G Y-3H- “ GENERAL PURPOSE TRANSISTOR ~ ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Colfecfor-Emitter Voltage Emitter-Base Voltage
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BCX71G
MMBT5086
OT-23
BCX71G
FLS SOT 23
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t3hs
Abstract: BF970 sot 37
Text: T-3HS BF970 PHILIPS INTERNATIONAL SbE D 711005b 0042100 731 IPHIN SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic T-package intended fo r application as self-oscillating mixer stage in u.h.f. tuners. QUICK REFERENCE DATA Collector-base voltage open emitter
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BF970
711005b
OT-37.
711002b
00421flc
T--31-15
t3hs
BF970
sot 37
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bdl 40
Abstract: l43 transistor transistor marking 2d ghz 9335 895 BFG480W
Text: DISCRETE SEMICONDUCTORS sheet BFG480W NPN wideband transistor Preliminary specification Supersedes data of 1998 Mar 06 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Jul 09 PHILIPS Philips Semiconductors Preliminary specification NPN wideband transistor
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BFG480W
BFG480W
SCA60
04/00/02/pp1
bdl 40
l43 transistor
transistor marking 2d ghz
9335 895
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transistor B 1184
Abstract: MGR638 BFG480W
Text: DISCRETE SEMICONDUCTORS BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 Philips Semiconductors 1998 Oct 21 PHILIPS Philips Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING • High power gain
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BFG480W
BFG480W
MSB842
SCA60
125104/00/03/pp16
transistor B 1184
MGR638
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 860 ObE » • bbS3^31 0013^22 1 D 01684 BLX13 V H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended fo r s.s.b. in class-A and AB and in f.m . transm itting appli cations in class-C w ith a supply voltage up to 28 V, The transistor is resistance stabilized and tested
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BLX13
147nH
118nH
bbS3T31
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BI 344 TRANSISTOR
Abstract: l43 transistor transistor dk qe 9335 895 DK 53 code transistor
Text: DISCRETE SEMICONDUCTORS s h eet BFG21W UHF power transistor 1998 Jul 06 Product specification Supersedes data of 1997 Nov 21 File under Discrete Semiconductors, SC14 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification UHF power transistor
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BFG21W
OT343R
SCA60
04/00/03/pp1
BI 344 TRANSISTOR
l43 transistor
transistor dk qe
9335 895
DK 53 code transistor
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BC856CW
Abstract: BC856BW
Text: Product specification Philips Semiconductors BC856W; BC857W; BC858W PNP general purpose transistor PIN CONFIGURATION FEATURES • S- mini package. DESCRIPTION NPN transistor in a plastic SOT323 package. PINNING - SOT323 PIN DESCRIPTION 1 base 2 emitter 3 collector
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BC856W;
BC857W;
BC858W
OT323
BC856W:
BC856AW
BC856BW
BC857W:
BC857AW
BC856CW
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uln 2800 data
Abstract: BUK566-60H
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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BUK566-60H
711002b
00T5b05
uln 2800 data
BUK566-60H
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T160R
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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BUK465-100A
SQT404
T160R
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2SD2449
Abstract: 2-21F1A 2SB1594 2sb15
Text: TO SH IBA TOSHIBA TRANSISTOR 2SD2449 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2449 High Breakdown Voltage : Vqe O = 160 V (Min.) Complementary to 2SB1594 MAXIMUM RATINGS (Tc = 25°C) SYMBOL VCBO
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2SD2449
2SB1594
2SD2449
2-21F1A
2SB1594
2sb15
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fairchild micrologic
Abstract: D9109 10-JK 9110 F 9109
Text: HIGH LEVEL LOGIC DIODE-TRANSISTOR MICROLOGIC. INTEGRATED CIRCUITS COMPOSITE DATA SHEET A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRODUCT O'C TO 75*C TEMPERATURE RANGE GENERAL DESCRIPTION— The Fairchild High Level Logic Diode-Transistor Micrologic® Integrated Circuit
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M3700
10--JK
fairchild micrologic
D9109
10-JK
9110
F 9109
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Untitled
Abstract: No abstract text available
Text: FZ 300 R 12 KF 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values 1200 Thermal properties RthJC DC, pro Baustein / per module 0 ,0 6 3 RthCK pro Baustein / per module
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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DARLINGTON 3A 100V npn array
Abstract: mp45
Text: TOSHIBA MP4506 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P4 5 0 6 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING.
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MP4506
DARLINGTON 3A 100V npn array
mp45
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J493
Abstract: BLX13 philips 3h1 ic hf 3487 4312 020 36620 VHF IF 70MHz
Text: N AMER PHILIPS/DISCRETE 860 01684 DbE D • ^53=131 D O ^ S E D T ~ 3 3 ' Ì 1 . BLX13 Jl H.F./V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and A B and in f.m. transmitting appli cations in class-C with a supply voltage up to 28 V, The transistor is resistance stabilized and tested
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bS3T31
BLX13
70MHz
J493
BLX13
philips 3h1
ic hf 3487
4312 020 36620
VHF IF 70MHz
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2SD2449
Abstract: 2-21F1A 2SB1594 transistor equivalent type
Text: TO SH IBA 2SD2449 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2449 Unit in mm High Breakdown Voltage : V q e O = 160 V (Min.) Complementary to 2SB1594 MAXIMUM RATINGS (Ta = 25°C)
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2SD2449
2SB1594
2SD2449
2-21F1A
transistor equivalent type
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Untitled
Abstract: No abstract text available
Text: FZ 600 R 12 KF 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values V ces ¡c 1200 V 6 00 A Thermal properties RfhJC DC, pro Baustein / per module RlthCK pro Baustein / per module
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R06KF2/3
FZ600R12KF
600ft
3HD32R7
0002G17
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MP4020 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 Mv • ■ P ■ a ■n i n HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE
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MP4020
CollMP4020
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BFY90 PHILIPS
Abstract: BFY90
Text: Philips Semiconductors Product specification bbSBIBl D0321S5 b^2 BIAPX NPN 1 GHz wideband transistor BFY90 N AMER PHILIPS/DISCRETE DESCRIPTION b^E J> PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the
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D0321S5
BFY90
bb53T31
MBA397
MEA363
BFY90 PHILIPS
BFY90
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Untitled
Abstract: No abstract text available
Text: FS 15 R 12 KF 2 Therm ische Eigenschaften Therm al properties 0,167 DC, pro Baustein / per module RthJC 1 DC, pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 1200 V 15 A
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DDD20b0
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44t transistor
Abstract: No abstract text available
Text: FS 15 R 06 KFS Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V 15 A V ces Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 2,27 ~ *th J C DC, pro Zweig / per arm
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