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    TRANSISTOR 3EM Search Results

    TRANSISTOR 3EM Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 3EM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 3em

    Abstract: marking 3EM sot-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTH10 TRANSISTOR NPN SOT–23 FEATURES  VHF/UHF Transistor MARKING: 3EM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value


    Original     		PDF OT-23 MMBTH10 100MHz transistor 3em marking 3EM sot-23

    transistor marking 3em

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTH10 TRANSISTOR NPN SOT–23 FEATURES  VHF/UHF Transistor MARKING: 3EM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value


    Original     		PDF OT-23 MMBTH10 transistor marking 3em

    voltage regulator sot-89 3v

    Abstract: dcdc sot-89 FHD3205 FHD3205E FHD3205P FHD3205Q FHD3205R transistor marking 2a REGULATOR SOT89 30v high power amplifier sot89
    Text: SOT-89 EPITAXIAL SILICON Transistor FHD3205 FEATURES特征 •High current output up to 2A; ·Low saturation voltage; ·Complement to FHB1273; ·NPN EPITAXIAL SILICON TRANSISTOR. Applications应用 ·Audio power amplifier; ·DC-DC converter; ·Voltage regulator.


    Original     		PDF OT-89 FHD3205 FHB1273; FHD3205r 200mA voltage regulator sot-89 3v dcdc sot-89 FHD3205 FHD3205E FHD3205P FHD3205Q FHD3205R transistor marking 2a REGULATOR SOT89 30v high power amplifier sot89

    transistor marking 3em

    Abstract: transistor marking code SOT-23 TRANSISTOR K 135 J 50 SOT-23 transistor code PB TRANSISTOR K 135 transistor marking code 3EM SOT-23 marking 3EM sot-23 transistor code PB marking code PC sot-23 3em sot-23
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z High transition frequency. z Power dissipation. PC=350mW MMBTH10 Pb Lead-free APPLICATIONS z VHF/UHF Transistor. SOT-23 ORDERING INFORMATION Type No. Marking Package Code


    Original     		PDF MMBTH10 350mW) OT-23 BL/SSSTC125 transistor marking 3em transistor marking code SOT-23 TRANSISTOR K 135 J 50 SOT-23 transistor code PB TRANSISTOR K 135 transistor marking code 3EM SOT-23 marking 3EM sot-23 transistor code PB marking code PC sot-23 3em sot-23

    BC546

    Abstract: BC547 45V 100mA NPN Transistor bc547 BC548 transistor bc547 BC547 4,5V 100mA NPN Transistor bc547 collector base emitter transistor BC548 of BC547 Transistor Bc547 npn
    Text: BC546 / BC547 / BC548 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation CLASSIFICATION OF hFE Product-Rank BC546A 1Collector 2Base 3Emitter


    Original     		PDF BC546 BC547 BC548 BC546A BC546B BC546C BC547A BC547B BC547C BC548A BC547 45V 100mA NPN Transistor BC548 transistor bc547 BC547 4,5V 100mA NPN Transistor bc547 collector base emitter transistor BC548 of BC547 Transistor Bc547 npn

    transistor marking 3em

    Abstract: MMBTH10LT1 mmbth10 MMBTH10-4LT1
    Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc


    Original     		PDF MMBTH10LT1, MMBTH10-4LT1 r14525 MMBTH10LT1/D transistor marking 3em MMBTH10LT1 mmbth10 MMBTH10-4LT1

    Untitled

    Abstract: No abstract text available
    Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc


    Original     		PDF MMBTH10LT1, MMBTH10-4LT1

    BC337

    Abstract: BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25
    Text: BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation CLASSIFICATION OF hFE Product-Rank BC337-16 1Collector 2Base 3Emitter J


    Original     		PDF BC337 BC338 BC337-16 BC337-25 BC337-40 BC338-16 BC338-25 BC338-40 Bas20V, 100mA BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25

    BC327

    Abstract: BC328 TRANSISTOR BC327-40 BC327 PNP transistor TRANSISTOR pnp BC328 BC327 transistor BC328-16 transistor BC328 bc327 datasheet BC327-25
    Text: BC327 / BC328 PNP Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 2Base 3Emitter J CLASSIFICATION OF hFE 1 A Product-Rank BC327-16


    Original     		PDF BC327 BC328 BC327-16 BC327-25 BC328-16 BC328-25 BC328-40 BC327-40 -10mA, -100mA BC328 TRANSISTOR BC327-40 BC327 PNP transistor TRANSISTOR pnp BC328 BC327 transistor BC328-16 transistor BC328 bc327 datasheet BC327-25

    transistor marking 3em

    Abstract: MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2
    Text: MMBTH10LT1, MMBTH10−4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS


    Original     		PDF MMBTH10LT1, MMBTH10-4LT1 MMBTH10LT1/D transistor marking 3em MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2

    mps 1049

    Abstract: JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23
    Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS


    Original     		PDF MMBTH10LT1, MMBTH10-4LT1 mps 1049 JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23

    Untitled

    Abstract: No abstract text available
    Text: 'Is.ii.E.u*y <3Emi- 2ondu.otoT O^ , Dna. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N3847 N-P-N SILICON POWER TRANSISTOR ••btolute maximum ratings at 25*C ease temperature (unless otherwise noted)


    Original     		PDF 2N3847

    2SB1182

    Abstract: No abstract text available
    Text: 2SB1182 PNP TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3EMITTER 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value Units VCBO Collector- Base Voltage -40 V VCEO Collector-Emitter Voltage


    Original     		PDF 2SB1182 O-251/TO-252-2L O-251 O-252-2L -500mA -200mA 30MHz

    3dd13001 TRANSISTOR

    Abstract: 3DD13001
    Text: 3DD13001 3DD13001 TRANSISTOR NPN FEATURES Power dissipation PCM: TO-251 1.2 W (Tamb=25℃) 1. BASE Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range 2. COLLECTOR 3EMITTER TJ, Tstg: -55℃ to +150℃


    Original     		PDF 3DD13001 O-251 3dd13001 TRANSISTOR 3DD13001

    Untitled

    Abstract: No abstract text available
    Text: MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318 STYLE 6


    Original     		PDF MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G NSVMMBTH10LT1G MMBTH10â 04LT1G MMBTH10LT1/D

    transistor marking code 3EM SOT-23

    Abstract: NSVMMBTH10 MMBTH10LT1G MMBTH10-4LT1G transistor marking 3em transistor 3em Marking code mps
    Text: MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318 STYLE 6


    Original     		PDF MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G AEC-Q101 OT-23 O-236) MMBTH10LT1/D transistor marking code 3EM SOT-23 NSVMMBTH10 MMBTH10LT1G transistor marking 3em transistor 3em Marking code mps

    marking Specific Device Code Date Code sot-23 4l

    Abstract: transistor 3em
    Text: MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor NPN Silicon http://onsemi.com Features • S and NSV Prefixes for Automotive and Other Applications • Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable


    Original     		PDF MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L AEC-Q101 OT-23 O-236) MMBTH10LT1/D marking Specific Device Code Date Code sot-23 4l transistor 3em

    2SB1182

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2Plastic-Encapsulate Transistors 2SB1182 TO-251 TO-252-2 TRANSISTOR PNP FEATURES Power dissipation 1.BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2.COLLECTOR Symbol Parameter Value


    Original     		PDF O-251/TO-252-2Plastic-Encapsulate 2SB1182 O-251 O-252-2 -500mA -200mA 30MHz 2SB1182

    3DD13001

    Abstract: No abstract text available
    Text: 3DD13001 0.2A , 600V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 Power switching applications A D B CLASSIFICATION OF hFE 1 Product-Rank 3DD13001-A


    Original     		PDF 3DD13001 3DD13001-A 3DD13001-B 19-Aug-2011 3DD13001

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 2SB1182 Plastic-Encapsulate Transistors TRANSISTOR PNP TO-252 FEATURES Power Dissipation 1.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2.COLLECTOR Symbol Parameter Value Unit VCBO Collector- Base Voltage


    Original     		PDF O-252 2SB1182 -500mA -200mA 30MHz

    marking 3EM sot-23

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBTH10LT1 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.225 W（Tamb=25℃） Collector current ICM : 0.05


    Original     		PDF OT-23 MMBTH10LT1 MMBTH10LT1 037TPY 950TPY 550REF 022REF marking 3EM sot-23

    BD 9222

    Abstract: SN7481 SN7484 SN7442 SN5481 WQ 5012 SN7444
    Text: CIRCUIT TYPES SN5481, SN5484, SN7481, SN7484 16-BIT ACTIVE-ELEMENT MEMORIES TTL MSI SN5481/SN7481 CIRCUITS W FLAT PACKAGE TOP VIEW description The 16-bit active-element memory is a m o n o lith ic , high-speed, transistor-transistor-logic (TTL) X4 WRITE


    OCR Scan     		PDF SN5481, SN5484, SN7481, SN7484 16-BIT SN5481/SN7481 SN5484/SN7484 BD 9222 SN7481 SN7442 SN5481 WQ 5012 SN7444

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1601 International IQR Rectifier IRG4BC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .


    OCR Scan     		PDF IRG4BC20FD O-22QAB

    Untitled

    Abstract: No abstract text available
    Text: International IOR Rectifier PD-9.1585A IRG4PC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10ps @ 125°C, VGE = 15V


    OCR Scan     		PDF IRG4PC40K O-247AC