NEC semiconductor
Abstract: 2sd2217 transistor PT 4500 C11531E NEC C11531E
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2217 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2217 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching.
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2SD2217
2SD2217
C11531E)
NEC semiconductor
transistor PT 4500
C11531E
NEC C11531E
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2SC4553
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4553 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low PACKAGE DRAWING UNIT: mm collector saturation voltage and features large current switching at a
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2SC4553
2SC4553
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sot-23 MARKING CODE 3d
Abstract: marking code 3d Transistor 3D 3D sot23 MARKING CODE 16 transistor sot23 transistor Vbe 3d transistor
Text: Central CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications. Marking Code is 3D.
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CMPTH81
OT-23
100MHz
26-August
sot-23 MARKING CODE 3d
marking code 3d
Transistor 3D
3D sot23
MARKING CODE 16 transistor sot23
transistor Vbe
3d transistor
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smd transistor 2a
Abstract: 5a SMD Transistor
Text: Transistor IC Transistors Transistor DIP SMDType Type SMD Type Product specification 3DD13007 • Features TO-263 Unit: mm +0.1 1.27-0.1 ● High Speed Switching +0.2 4.57-0.2 +0.2 5.28-0.2 2 3 +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 +0.2 2.54-0.2 0.1max +0.1 1.27-0.1
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3DD13007
O-263
smd transistor 2a
5a SMD Transistor
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Untitled
Abstract: No abstract text available
Text: BLF647PS Broadband power LDMOS transistor Rev. 2 — 18 November 2013 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The
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BLF647PS
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UT-090C-25
Abstract: BLF647P 130005 power transistor
Text: BLF647P Broadband power LDMOS transistor Rev. 2 — 12 April 2013 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The
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BLF647P
UT-090C-25
BLF647P
130005 power transistor
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Untitled
Abstract: No abstract text available
Text: MMBTA44 500V, 0.2A NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES High Voltage Transistor A L 3 3 MARKING C B Top View 1 1 3D 2 K E 2 D PACKING INFORMATION
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MMBTA44
OT-23
16-Aug-2012
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Untitled
Abstract: No abstract text available
Text: BLF645 Broadband power LDMOS transistor Rev. 01 — 27 January 2010 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The
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BLF645
BLF645
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BLF645
Abstract: C4532X7R1E475MT020U RF35
Text: BLF645 Broadband power LDMOS transistor Rev. 01 — 27 January 2010 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The
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BLF645
BLF645
C4532X7R1E475MT020U
RF35
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transistor d325
Abstract: B511 transistor 3DD325 B511 TIP31c PNP Transistor D325 D325 transistor 3CD511 3a npn to220 transistor npn transistor 3A
Text: TRANSISTOR TO-220 PLASTIC-ENCAPSULATE BIPOLAR TRANSISTOR HFE PC I C B vcbo B vceo mW (mA) (V) (V) MIN MAX I C (mA) V ce (sat) V ce (V) (V) IC (mA) Ib (mA) fT (MHz) PIN ARRAY SUBSTITUTE TYPE 5 BCE 2SD880 50 BCE 3DD325 200 -500 -3 -1 -1500 -150 50 BCE 3CD511
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O-220
2SD880
3DD325
3CD511
2SB834
TIP31C
TIP32C
TIP41C
TIP42C
transistor d325
B511 transistor
3DD325
B511
TIP31c PNP Transistor
D325
D325 transistor
3CD511
3a npn to220 transistor
npn transistor 3A
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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2SC5169
Abstract: low noise transistor table
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5169 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SCS169 is a silicon NPN epitaxial type transistor. It Is designed for Unit:mm OUTLINE DRAWING
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2SC5169
2SCS169
100mVtyp
X10-3
2SC5169
low noise transistor table
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2SA1928
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1928 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION _ SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1928 is a silicon PNP epitaxial type transistor. It is designed for low noise differential amplify application.
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2SA1928
2SA1928
-100V
270Hz
270Hz
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2sa1929
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1929 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Mitsubishi 2SA1929 is a silicon PNP epitaxial type transistor. It is designed for
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2SA1929
2SA1929
-100V
300mA,
100Hz)
110mV
270Hz
X10-3
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2SA1927
Abstract: 05SV ra-100
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2 S A 1 9 2 7 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1927 is a silicon PNP epitaxial type transistor. It is designed for OUTLINE DRAWING
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2SA1927
2SA1927
100mVtyp
270Hz
X10-3
05SV
ra-100
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK565-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channei enhancement mode logic level fleld-effect power transistor in a
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BUK565-200A
SQT404
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4312 020 36642
Abstract: BLV37 transistor tt 2222 9t2 transistor ca212 TT 2222 npn transistor 4312
Text: PHILIPS INTERNATIONAL bSE ]> • 711002b OObS'in 3dfl « P H I N BLV37 A VHF PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in V H F broadcast transmitters. Features • Internally matched input fo r wideband operation and high power gain
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711002b
BLV37
OT179
711Da2b
4312 020 36642
BLV37
transistor tt 2222
9t2 transistor
ca212
TT 2222 npn
transistor 4312
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fleld-effect power transistor in a plastic envelope suitable for surface mount applications.
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BUK581-60A
OT223
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Untitled
Abstract: No abstract text available
Text: . N E C ELECTRONICS INC 3QE D • b427525 G 0 2 ci50,:i 7 ■ T ^ " 4 i *“ W PHOTO TRANSISTOR _ P H 1 0 6 PHOTO TRANSISTOR The PH 106 is a photo transistor in a plastic molded package, and PACKAG E DIMENSIONS very suitable for a detector of a photo interrupter.
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b427525
b427S5S
PH106
T-41-61
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Untitled
Abstract: No abstract text available
Text: •I bb53^31 002flT33 624 N AHER PHILIPS/DISCRETE IAPX b lE BLV20 D V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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002flT33
BLV20
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BUK454-600B
Abstract: T0220AB t 326 Transistor
Text: N AMER P H I L I P S / D I S C R E T E b^E D • □□3Dfc>3D TM2 ■ I APX b ¡35 3^31 Product Specification Philips Semiconductors BUK454-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.
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0G30b3G
BUK454-600B
T0220AB
BUK454-600B
T0220AB
t 326 Transistor
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Untitled
Abstract: No abstract text available
Text: bbSB'Gl □D2^3DD flflT • APX N AKER PHILIPS/DISCRETE bH E BLW31 » V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters with a nominal supply voltage o f 13,5 V. Because of the high gain and excellent power
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BLW31
BFQ43
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TRANSISTOR 3000W 400V
Abstract: 3000w smps smps 3000W flyback 3000w smps 1500W SGSF661 3000w mosfet circuit
Text: • 7^537 005^555 Q ■ H~~’ 3>1>- I S G ì S 6 SGS-THOMSON i^ OT KS S-TH0MS0N _ SGSF661 3DE » FASTSWITCH HOLLOW-EMITTER NPN TRANSISTOR ■ HIGH SW ITC H IN G SPEED NPN POWER TRANSISTOR ■ HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLICA
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SGSF661
70kHz
71BqB37
TRANSISTOR 3000W 400V
3000w smps
smps 3000W
flyback 3000w
smps 1500W
SGSF661
3000w mosfet circuit
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