3BS transistor
Abstract: marking 3bs transistor 3bs 3bs marking code 3BS MARKING sot323 transistor marking BL SOT323 BC856W BC857W BC858W
Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor BC856W/BC857W/BC858W FEATURES z Ideally suited for automatic insertion. z Power dissipation. PC=200mW Pb Lead-free APPLICATIONS z General purpose switching and amplification application.
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BC856W/BC857W/BC858W
200mW)
OT-323
BC856W
BC857W
BC858W
3BS transistor
marking 3bs
transistor 3bs
3bs marking code
3BS MARKING
sot323 transistor marking
BL SOT323
BC856W
BC857W
BC858W
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MARKING 3FS
Abstract: MARKING CODE 21E SOT23 marking 3ks
Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN 1 2006-09-29
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BC856.
-BC860.
BC846.
-BC850.
BC856A
BC856B
BC856BW
BC857A
MARKING 3FS
MARKING CODE 21E SOT23
marking 3ks
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MARKING 3FS
Abstract: marking 3bs BC846 Infineon BC857 3fs BC857BL3 BC860BW BC856A BC856B BC856BW BC857A
Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package1)
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BC856.
-BC860.
BC846.
-BC850.
BC856A
BC856B
BC856BW
OT323
MARKING 3FS
marking 3bs
BC846 Infineon
BC857 3fs
BC857BL3
BC860BW
BC856A
BC856B
BC856BW
BC857A
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3BS transistor
Abstract: transistor 3bs 846T BC856AT BC856BT BC856T SC75 transistor BC 109 Data
Text: BC856T PNP Silicon AF Transistor Preliminary data 3 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Complementary types: BC 846T 2 1 Type Marking Pin Configuration BC856AT 3As 1=B 2=E 3=C SC75
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BC856T
BC856AT
BC856BT
VPS05996
EHP00381
EHP00380
Jan-08-2002
EHP00382
EHP00379
3BS transistor
transistor 3bs
846T
BC856AT
BC856BT
BC856T
SC75
transistor BC 109 Data
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3BS transistor
Abstract: No abstract text available
Text: BC856T PNP Silicon AF Transistor Preliminary data 3 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Complementary types: BC 846T 2 1 Type Marking Pin Configuration BC856AT 3As 1=B 2=E 3=C SC75
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BC856T
VPS05996
BC856AT
BC856BT
3BS transistor
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marking code MS SOT323
Abstract: BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860
Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)
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Original
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BC856.
-BC860.
BC846.
-BC850.
BC856A
BC856B
BC856BW
OT323
marking code MS SOT323
BC846
BC850
BC856
BC856A
BC856B
BC856BW
BC857A
BC857B
BC860
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transistor packing code 3f
Abstract: marking 3ks BC856B BC856BW BC857A BC857AW BC846 BC850 BC856 BC856A
Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)
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Original
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BC856.
-BC860.
BC846.
-BC850.
BC856A
BC856B
BC856BW
OD323
transistor packing code 3f
marking 3ks
BC856B
BC856BW
BC857A
BC857AW
BC846
BC850
BC856
BC856A
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top marking 1B sot23
Abstract: marking 3bs 3bs marking code BC856-BC860 3BS MARKING MARKING 3gs marking 3Ls SOT23 3ks 3Fs marking transistor 3Fs sot23
Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)
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Original
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BC856.
-BC860.
BC846.
-BC850.
BC856A
BC856B
BC856BW
BC857A
top marking 1B sot23
marking 3bs
3bs marking code
BC856-BC860
3BS MARKING
MARKING 3gs
marking 3Ls
SOT23 3ks
3Fs marking transistor
3Fs sot23
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3BS transistor
Abstract: S0642
Text: rz 7 ^ 7# SGS-THOMSON R L ie r a « S 0 6 4 2 SMALL SIGNAL NPN TRANSISTOR Type Marking SO 642 N91 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER
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S0692
OT-23
SC06960
S0642
OT-23
3BS transistor
S0642
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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BD722
Abstract: BD720 B0719 BD440 BD719 BD724 BD726 transistor 3bs NPN, Si, POWER TRANSISTOR, PLASTIC
Text: BD720 BD722 BD724 BD726 J SILICON EPITAXIAL-BASE POWER TRANSISTOR PNP transistor in a S O T3 2 plastic envelope intended fo r use in audio output and general purpose am plifier applications. BD 720 is equivalent to BD 440. NPN complements are B D 719; 721; 723 and
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BD720
BD722
BD724
BD726
BD440.
BD719;
BD724.
bd722
B0719
BD440
BD719
BD726
transistor 3bs
NPN, Si, POWER TRANSISTOR, PLASTIC
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AT-60585
Abstract: AT60585 Silicon Bipolar Transistor Silicon Bipolar Transistor Hewlett-Packard 3BS transistor
Text: HE W LET T-PACKARD/ CMPNTS blE D • 44475Ö4 □ D D tìflb4 3bS H H P A AT-60585 Up to 6 GHz Low Noise Silicon Bipolar Transistor T h a t HEW LETT mLEM PA C K AR D 85 Plastic Package Features • • Low Bias Current Operation Low Noise Figure: 1.4 dB typical at 1.0 GHz
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44475A4
AT-60585
AT-60585
AT60585
Silicon Bipolar Transistor
Silicon Bipolar Transistor Hewlett-Packard
3BS transistor
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BU508A
Abstract: BU508D philips bu508a BY223 diode BY223 transistor BU508D bu50ba BY22B BU508D transistor transistor AS 431
Text: Product specification Philips Semiconductors BU508A; BU508D Silicon diffused power transistors High-voltage, high-speed switching npn transistor in SOT93A envelope intended for use in horizontal deflection circuits of colour television receivers. The BU508D has an integrated efficiency diode.
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BU508A;
BU508D
OT93A
BU508D
BU508D)
711002b
BU508A
philips bu508a
BY223
diode BY223
transistor BU508D
bu50ba
BY22B
BU508D transistor
transistor AS 431
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Untitled
Abstract: No abstract text available
Text: International TGR Rectifier PD-9.1585A IRG4PC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features * Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10ms @ 125°C, VGe = 15V
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IRG4PC40K
O-247AC
002S112
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Untitled
Abstract: No abstract text available
Text: ^ Philips Components Data sheet status Prelim inary specification date of issue March 1991 P H I L IP S N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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BUK474-500B
7110fi2b
-SOT186A
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TLP1240
Abstract: No abstract text available
Text: INFRARED LED + PHOTO TRANSISTOR TLP1240 C5 (TLP1240(C 5)> COPIER, PAGE PRINTIR, FACSIMILE FAN-HEATER, AIR CONDITIONER TERMINAL EQUIPMENT IN BANKING FACILITIES GAME MACHINE TLP1240 (C5) is a compact photo in te rru p ter w ith attached connector which uses a hig h -rad ian t
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TLP1240
TLP1240
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TTPC
Abstract: BUK474-500B rm3 transistor BUK474
Text: Philips Components Data sheet status Preliminary specification date of issue March 1991 INTERNATIONAL N -channel en han cem en t m ode field-effect pow er transistor in a plastic full-pack envelope. T h e device is intended for use in Switched M ode P ow er Supplies
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BUK474-500B
7110fl2b
-SOT186A
711Dfl2b
0D44b23
TTPC
BUK474-500B
rm3 transistor
BUK474
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3BS transistor
Abstract: BD937F b0933 BD935F BD939F 935F BD935 d941 BD933F BD934F
Text: BD933F; BD935F BD937F; BD939F _ _ _ _BD941F _ PHILIPS I N T E R N A T I O N A L SbE D m 711002b 0043G52 3=12 « P H I N -SILICON EPITAXIAL POWER TRANSISTORS 7^ -J 3 ~ ô '7 ' NPN silicon power transistor ina SOT186 envelope with an electrically insulated mounting base,
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BD933F;
BD935F
BD937F;
BD939F
BD941F
711002b
0043G52
OT186
BD934F,
BD936F,
3BS transistor
BD937F
b0933
935F
BD935
d941
BD933F
BD934F
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2SC509
Abstract: 2SA509 4687 transistor 2SA509-Y transistor 4687 2sa509 transistor 2SA509Y 2sc509 transistor RH-16 Produced by Perfect Crystal Device Technology
Text: 2/UD>PNPItr^2/?;i/»h5>5?^ PCTÄÄ ^ ^ L IC O N o & mantas m m o Audio Power Amplifier Applications b PNP EPITAXIAL TRANSISTOR (PCT PROCESS) Wl? v-y ^ 7 *-r; m 2SC509 i a v 7 V / v f y fri b -* -t ; 1 Watt Amplifier Applications Complementary to 2SC509 M ±
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2SC509
RH-16
2sa509
-30-SO
00X10Oxlmm
2SC509
2SA509
4687 transistor
2SA509-Y
transistor 4687
2sa509 transistor
2SA509Y
2sc509 transistor
RH-16
Produced by Perfect Crystal Device Technology
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transistor BD939F
Abstract: d941 935F b0933 939f 939-F BD-939F 937f BD941F BD939F
Text: BD933F; BD935F BD937F; BD939F BD941F PHILIPS INTE RNATIONAL SbE D • TllüûSb 00M3052 S^E ■ P H I N SILICON EPITAXIAL POWER TRANSISTORS T -J 3 -0 T NPN silicon power transistor ina SO T186 envelope w ith an electrically insulated mounting base, intended fo r use in audio o utpu t stages and fo r general purpose am plifier applications.
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BD933F;
BD935F
BD937F;
BD939F
BD941F
Q0M3052
OT186
BD934F,
BD936F,
BD938F,
transistor BD939F
d941
935F
b0933
939f
939-F
BD-939F
937f
BD941F
BD939F
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2SB1628
Abstract: No abstract text available
Text: = r-5 > • S / - h y ' J a > h 7 > y X ^ Silicon Transistor 2 S 1 B 6 2 8 P N P X fcf£ 3r V 2SB16 2 8 ? M ' *'* e>* 1 / ; ^ * : £ ^ fl-JfclS ÜM£ : mm U T -fe U , DC / DC =l > • K 7 < A - 4 '^ ( r S S T 'T c , 1.5±0.1 n AM +0 .0 3 U . 4 1 - 0 .0 5
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2SB1628
2SB1628
IEI-620)
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7423PC
Abstract: 00k3
Text: NATIONAL SEflICOND { L O G I C } DEE D I bSGUEE □ □t>3bSö S 23 I T -^ -/r C O N N E C T IO N D IA G R A M P IN O U T A 54/7423 EXPANDABLE DUAL 4-IN PU T NOR GATE W ith Strobe O R D E R IN G C O D E : See Section 9 PIN PKG S OUT C O M M E R C IA L G RADE
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7423P
5423D
7423FC
5423FM
7423PC
00k3
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Untitled
Abstract: No abstract text available
Text: SANYO SEMI CONDUCTOR I Ordering n u m b e r: EN4188 CORP S3E ] • 7 cî tî 7 G 7 b G01G1SD 3bS ■ TS AJ | T—52—13—25 Monolithic Digital IC LB1855M No.4188 i 3-Phase Brushless Motor Driver The LB18S5M is a 3-phase brushless motor driver 1C ideally suited for use in VCR drum motor driver.
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EN4188
G01G1SD
LB1855M
LB18S5M
DG10154
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3BS transistor
Abstract: No abstract text available
Text: BCR 400 Preliminary Data Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FET's from
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200mA
fl23SbOÂ
023SbDS
0235b05
3BS transistor
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