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    TRANSISTOR 3906 Search Results

    TRANSISTOR 3906 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 3906 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N3906

    Abstract: transistor 2N3905 2N3905 2n3906 PNP transistor DC current gain transistor T43 S03 pnp transistor 3906 3906 pnp transistor 2N3906 3906
    Text: 2N 3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCEo=40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage C ollector-Emitter Vbltage


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    2N3905/3906 625mW 2N3906 Widths300 -30-SO DD2S024 transistor 2N3905 2N3905 2n3906 PNP transistor DC current gain transistor T43 S03 pnp transistor 3906 3906 pnp transistor 2N3906 3906 PDF

    transistor pnp 3906

    Abstract: transistor c 3906 transistor 3906 3906 pnp transistor 2n 3906 Transistor 2n 3906 18 3906 2n 2N3906 3906 pnp 3906 TRANSISTOR
    Text: 2N3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Emitter Voltage: Veto* 40V • Collector DiMipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Sym bol Characteristic Collector-Base Voltage Collector-Emitter Voltage


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    2N3905/3906 625mW 2N3906 transistor pnp 3906 transistor c 3906 transistor 3906 3906 pnp transistor 2n 3906 Transistor 2n 3906 18 3906 2n 3906 pnp 3906 TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Em itter Voltage: V Ceo =40V • C o llector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


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    2N3905/3906 625mW 2N3906 300//s, 7Tb414E 0D2S02M PDF

    2N3905

    Abstract: 2N3906 transistor 2N3905
    Text: 2N3905/3906 2N3905/3906 General Purpose Transistor • Collector-Emitter Voltage: VCEO=-40V • Collector Dissipation: PC max =625mW PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted TO-92 1 1. Emitter 2. Base 3. Collector


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    2N3905/3906 625mW 2N3906 2N3905 transistor 2N3905 PDF

    transistor SMD 3906

    Abstract: transistor 3906 smd P008B SMD Transistor 070 R 3906 SOT-223 transistor 3906 SMD component PZT3904 PZT3906 SMD Transistor 65 S 50 transistor pnp 3906
    Text: PZT3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking PZT3906 3906 SILICON EPITAXIAL PLANAR PNP TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS PZT3904 APPLICATIONS


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    PZT3906 OT-223 PZT3904 OT-223 transistor SMD 3906 transistor 3906 smd P008B SMD Transistor 070 R 3906 SOT-223 transistor 3906 SMD component PZT3904 PZT3906 SMD Transistor 65 S 50 transistor pnp 3906 PDF

    2N3906

    Abstract: 3906 pnp 2n3906 PNP transistor DC current gain transistor c 3906
    Text: 2N 3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V Ce o = 4 0 V • Collector Dissipation: Pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


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    625mW 2N3906 --10m 3906 pnp 2n3906 PNP transistor DC current gain transistor c 3906 PDF

    2N3906

    Abstract: 2n3905 tr 2n3906 transistor 2N3905 2n3906 PNP transistor DC current gain 3906 pnp 2N3906 PNP transistor
    Text: 2N3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Cotlector-Em itter Voltage: V c e o “ 4 0 V • Collector Dissipation: Pc max «625mW ABSOLUTE MAXIMUM RATINGS (TA- 2 5 t ) C haracteristic Collector-Base Voltage Collector-Em itter Voltage


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    2N3905/3906 625mW 2N3905 2N3906 2N3900MHz -10mA tr 2n3906 transistor 2N3905 2n3906 PNP transistor DC current gain 3906 pnp 2N3906 PNP transistor PDF

    d 772 transistor

    Abstract: 2n3904 philips 2N3904 2n3904 950 2N3904 plastic 2N3906 2N3906 plastic 2n3906 PNP transistor DC current gain
    Text: N AMER PHILIPS/DISCRETE b TE D • bbS3T31 0020140 7D7 I IAPX 2N3904 I SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic T O -92 envelope, primarily intended for high-speed, saturated switching applications fo r industrial service. PNP complement Is 2N 3906.


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    bbS3T31 2N3904 2N3906. 7Z749B8_ d 772 transistor 2n3904 philips 2N3904 2n3904 950 2N3904 plastic 2N3906 2N3906 plastic 2n3906 PNP transistor DC current gain PDF

    2N2222A plastic package

    Abstract: TPQ2907A transistor 2n2222A plastic package NPN transistor 2n2222A plastic package 2n2222a plastic tpq3904
    Text: QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most


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    14-pin TPQ2222A TPQ3904 TPQ2907A TPQ3906 TPQ6502 2N2222 2N2907 2N2907A 2N3904 2N2222A plastic package transistor 2n2222A plastic package NPN transistor 2n2222A plastic package 2n2222a plastic tpq3904 PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    Untitled

    Abstract: No abstract text available
    Text: QUAD TRANSISTOR ARRAYS Series T P Q quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most


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    14-pin TPQ2222A TPQ3904 TPQ2907A 2N2222 TPQ3906 TPQ6502 PDF

    transistor 2222a

    Abstract: No abstract text available
    Text: SERIES TPQ QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most


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    14-pin TPQA06 TPQA55 TPQA56 PSA55 PSA56 2N2907 2N3904 2N3906 transistor 2222a PDF

    transistor 2N 3904

    Abstract: No abstract text available
    Text: SERIES TPQ QUAD TRANSISTOR ARRAYS S eries T P Q quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. Th e molded package is identical to that used with most


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    14-pin TPQA05 TPQ2222A TPQ6427 TPQA06 TPQ2907 TPQ5401 TPQA56 TPQ2907A TPQ3906 transistor 2N 3904 PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    itt 3906

    Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 741CE 2N3799 MOTOROLA TRANSISTOR REPLACEMENT GUIDE itt 2n2222
    Text: SPRflGUE "ZT SERIES TPQ QUAD TRAHSISTOR ARRAYS The Sprague Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent transistors. Shown are eight NPN types, Five PNP types, and nine NPN/PNP dual complementary pairs.


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    14-lead MC1439G MC1439P1 MC1741CG MC1741CP1 MC3003 MC3491P* MC7437L MC7438L MC75451P itt 3906 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 741CE 2N3799 MOTOROLA TRANSISTOR REPLACEMENT GUIDE itt 2n2222 PDF

    2n390g

    Abstract: 2N390G TRANSISTOR TPQ3725 TPQ3724 2N2907 NPN Transistor 2n2222 TPQ6502 2N3799 2N2906 NPN Transistor TPQ6700
    Text: SPRflGUE "ZT SERIES TPQ QUAD TRAHSISTOR ARRAYS The Sprague Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent transistors. Shown are eight NPN types, Five PNP types, and nine N PN /PN P dual complementary pairs.


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    14-lead 2N3799 TPQ3906 TPQ6001 2N2221/2N2906 TPQ6002 2N2222/2N2907 TPQ6100 2N2483/2N3798 TPQ6100A 2n390g 2N390G TRANSISTOR TPQ3725 TPQ3724 2N2907 NPN Transistor 2n2222 TPQ6502 2N3799 2N2906 NPN Transistor TPQ6700 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMDT3946 NPN / PNP Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product Dual General Purpose Transistor SOT-363 The MMDT3946 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363-6


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    MMDT3946 OT-363 MMDT3946 OT-23/SOT-323 OT-363-6 026TYP 65TYP) 021REF 01-Jan-2006 PDF

    JOHANSON 2951

    Abstract: MRF5174 IR 21025 8ASF U028
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line 2W - 4 0 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON .d e s ig n e d prim arily for w ideband large-signal driver and pre­ driver am plifier stages in the 2 6 0 -6 0 0 M H z frequency range.


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    n3904

    Abstract: 2N3904 die 2N3904 2N3906
    Text: 2N3904 VISHAY NPN SMALL SIGNAL TRANSISTOR y LITEM ZI POWER SEMICONDUCTOR Features Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Type Available 2N 3906


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    2N3904 2N3906) MIL-STD-202, 2N3904 100kHz 100nA, 15000Hz 300ns, DS11102 n3904 2N3904 die 2N3906 PDF

    6c2 transistor

    Abstract: No abstract text available
    Text: SIEMENS SMBT 3906S PNP Silicon Switching Transistor Array 4 High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with high matching in one package Complementary type: SMBT 3904S (NPN) 2


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    100mA 3904S 3906S VPS05604 3906S Q62702-A1202 EHA07173 OT-363 EHP00767 EHP00770 6c2 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: NEW PRODUCT MMDT3946 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and


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    MMDT3946 3904-Type 3906-Type OT-363 OT-363, MIL-STD-202, PNP3906 -10mA, -50mA, PDF

    pnp3906

    Abstract: 3906 npn3904 MMDT3946
    Text: /RANSYS ELECTRONICS LIMITED MMDT3946 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package


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    MMDT3946 3904-Type 3906-Type OT-363, MIL-STD-202, PNP3906 NPN3904 OT-363 -10mA, 100MHz 3906 MMDT3946 PDF

    MMDT3946

    Abstract: PNP 3906 SOT23 sot363 mmdt3946
    Text: BL Galaxy Electrical Production specification Small Signal Surface Mount Transistor FEATURES z Complementary pair. z One 3904-Type NPN MMDT3946 Pb Lead-free One 3906-Type PNP z Ideal for low power amplification and switching. z Ultra-Small surface mount package


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    MMDT3946 3904-Type 3906-Type OT-363 OT-23 BL/SSSTE004 MMDT3946 PNP 3906 SOT23 sot363 mmdt3946 PDF

    npn3904

    Abstract: pnp3906 3904 3904 TRANSISTOR PNP 3906 pnp 3906 MMDT3946
    Text: MMDT3946 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package


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    MMDT3946 3904-Type 3906-Type OT-363 OT-363, MIL-STD-202, -10mA, -50mA, -100mA, npn3904 pnp3906 3904 3904 TRANSISTOR PNP 3906 pnp 3906 MMDT3946 PDF