K1359
Abstract: toshiba l40 2SK1359
Text: T O S H IB A 2SK1359 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII-5 2 S K 1 359 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance
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2SK1359
K1359
toshiba l40
2SK1359
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A1359
Abstract: 2SA1359 2SC3422
Text: 2SA1359 TOSHIBA 2 S A 1 359 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS AUDIO FREQUENCY PO W ER AMPLIFIER. LOW SPEED SWITCHING. • Suitable for Output Stage of 5 Watts Car Radio and Car Stereo. Good Linearity of h-FEComplementary to 2SC3422.
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2SA1359
2SC3422.
A1359
2SA1359
2SC3422
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2SA1359
Abstract: 2SC3422 A1359
Text: TO SH IBA 2SA1359 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 359 AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING • Suitable for Output Stage of 5 Watts Car Radio and Car Stereo. • Good Linearity of hjpg. • Complementary to 2SC3422.
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2SA1359
2SC3422.
2SA1359
2SC3422
A1359
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK1359 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt- M O S I I 5 2 S K 1 359 HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER A N D M O TO R DRIVE APPLICATIONS U n i t in m m • Low Drain-Source ON Resistance
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2SK1359
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a1359
Abstract: 2tj transistor 2SA1359 2SC3422 cd 3301
Text: TOSHIBA 2SA1359 2 S A 1 359 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER. LO W SPEED SWITCHING. • 8.3 MAX. • • 0 z.i± o .i 5.8 Suitable for Output Stage of 5 Watts Car Radio and Car Stereo.
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2SA1359
2SC3422.
961001EAA2'
a1359
2tj transistor
2SA1359
2SC3422
cd 3301
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SA1359 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 359 AUDIO FREQUENCY POWER AMPLIFIER. LOW SPEED SWITCHING. U nit in mm 8.3M AX. 0 S .1 + C U &8 • Suitable for Output Stage of 5 Watts Car Radio and Car Stereo. ä ' • Good Linearity of h p g.
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2SA1359
2SC3422.
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SA1359 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 359 AUDIO FREQUENCY PO W ER AMPLIFIER. U n it in mm LO W SPEED SWITCHING. • Su itab le for O utput Stage of 5 W a tts C ar Radio and C ar i m Stereo. • Good L in e a rity of
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2SA1359
2SC3422,
961001EAA2'
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Untitled
Abstract: No abstract text available
Text: KSD1943 NPN EPITAXIAL SILICON TRANSISTOR HIGH /£?POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit Collector Base Voltage VcBO 80 V Collector Emitter Voltage VcEO 60 V Emitter Base Voltage V eb o 8 V Collector Current lc 3 A Collector Dissipation TA=25'C
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KSD1943
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BP317
Abstract: PMBT5401 PMBT5550
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 PMBT5401 PNP high-voltage transistor Product specification Supersedes data of 1997 Apr 09 1999 Apr 15 Philips Semiconductors Product specification PNP high-voltage transistor PMBT5401 FEATURES PINNING • Low current max. 300 mA
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M3D088
PMBT5401
PMBT5550.
MAM256
SCA63
115002/00/03/pp8
BP317
PMBT5401
PMBT5550
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transistor J9
Abstract: No abstract text available
Text: KSD1943 NPN EPITAXIAL SILICON TRANSISTOR HIGH j9 POWER TRANSISTOR TO -220 ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit VcBO 80 60 8 3 40 1 50 —5 5 ~ 1 50 V V V A W °C °C Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage
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KSD1943
transistor J9
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PDTA123JE
Abstract: PDTC123JE SC-75
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Aug 03 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES • Built-in bias resistors R1 and R2 typ. 2.2 and 47 kΩ
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M3D173
PDTC123JE
MAM346
SC-75;
OT416)
115002/00/03/pp8
PDTA123JE
PDTC123JE
SC-75
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PDTA124XE
Abstract: PDTC124XE SC-75
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA124XE PNP resistor-equipped transistor Product specification Supersedes data of 1998 Nov 25 1999 May 21 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124XE FEATURES • Built-in bias resistors R1 and R2 typ. 22 kΩ and 47 kΩ
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M3D173
PDTA124XE
MAM345
SC-75)
115002/00/03/pp8
PDTA124XE
PDTC124XE
SC-75
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN • High voltage (max. 300 V).
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M3D088
MMBTA42
MMBTA92.
MAM255
603506/01/pp8
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PDTA124XE
Abstract: PDTC124XE SC-75
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124XE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Sep 21 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE FEATURES • Built-in bias resistors R1 and R2 typ. 22 kΩ and 47 kΩ
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M3D173
PDTC124XE
MAM346
SC-75;
OT416)
115002/00/03/pp8
PDTA124XE
PDTC124XE
SC-75
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PDTC143XE
Abstract: PDTA143XE SC-75 PDTA143 PDTA143X
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC143XE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 29 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143XE FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 kΩ and 10 kΩ
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M3D173
PDTC143XE
MAM346
SC-75;
OT416)
115002/00/02/pp8
PDTC143XE
PDTA143XE
SC-75
PDTA143
PDTA143X
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BP317
Abstract: MMBTA42 MMBTA92 254-D
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN
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M3D088
MMBTA42
MMBTA92.
MAM255
603506/01/pp8
BP317
MMBTA42
MMBTA92
254-D
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PDTC114YE
Abstract: SC-75
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114YE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE FEATURES PINNING • Built-in bias resistors R1 and R2 typ. 10 kΩ and 47 kΩ
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M3D173
PDTC114YE
115002/00/03/pp8
PDTC114YE
SC-75
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MMBTA92
Abstract: BP317 MMBTA42
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA92 PNP high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 PINNING FEATURES • Low current max. 100 mA PIN
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M3D088
MMBTA92
MMBTA42.
MAM256
603506/01/pp8
MMBTA92
BP317
MMBTA42
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PDTC114EE
Abstract: PDTA114EE SC-75
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114EE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Nov 26 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EE FEATURES PINNING • Built-in bias resistors R1 and R2 typ. 10 kΩ each
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M3D173
PDTC114EE
115002/00/04/pp8
PDTC114EE
PDTA114EE
SC-75
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PDTA143XE
Abstract: SC-75
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA143XE PNP resistor-equipped transistor Product specification 1999 Apr 20 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA143XE FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 kΩ and 10 kΩ
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Original
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M3D173
PDTA143XE
MAM345
SC-75
OT416)
SCA63
115002/00/01/pp8
PDTA143XE
SC-75
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PDTC123ET
Abstract: marking code 10 sot23 PDTA123JT
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123JT PNP resistor-equipped transistor Product specification 1999 May 27 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JT FEATURES • Built-in bias resistors typ 2.2 kΩ
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M3D088
PDTA123JT
MAM100
115002/01/pp8
PDTC123ET
marking code 10 sot23
PDTA123JT
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U15 transformer
Abstract: horizontal deflection circuit Horizontal-Deflection Output transformer CD 7640 1200 w 45 khz transformer IC 3263 datasheet 6 pins IC cbe CU15/35 philips 1n4148 1N4148
Text: Crop here for Mid-Atlantic paper size DISCRETE SEMICONDUCTORS FACT SHEET 078 Horizontal deflection transistors for 17", 70 kHz monitors Using Philips’ CU15/35 drive transformer and BU4525AF/AX transistor Most 17" monitor designs for PCs are required to operate up
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CU15/35
BU4525AF/AX
U15 transformer
horizontal deflection circuit
Horizontal-Deflection Output transformer
CD 7640
1200 w 45 khz transformer
IC 3263 datasheet
6 pins IC cbe
philips 1n4148
1N4148
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PDF
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CD 7640
Abstract: U15 transformer horizontal deflection circuit nf 817 1N4148 BC337A BY359X-1500S BYV28-50 BZX79C6V8 philips BC
Text: Crop here for Mid-Atlantic paper size DISCRETE SEMICONDUCTORS FACT SHEET 078 Horizontal deflection transistors for 17", 70 kHz monitors Using Philips’ CU15/35 drive transformer and BU4525AF/AX transistor Most 17" monitor designs for PCs are required to operate up
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CU15/35
BU4525AF/AX
CD 7640
U15 transformer
horizontal deflection circuit
nf 817
1N4148
BC337A
BY359X-1500S
BYV28-50
BZX79C6V8
philips BC
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PDF
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MMBT3906 PHILIPS
Abstract: transistor MMBT3906 marking code 10 sot23 marking code ce SOT23 BP317 MMBT3904 MMBT3906
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3906 PNP switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP switching transistor MMBT3906 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V).
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M3D088
MMBT3906
MMBT3904.
MAM256
603506/01/pp8
MMBT3906 PHILIPS
transistor MMBT3906
marking code 10 sot23
marking code ce SOT23
BP317
MMBT3904
MMBT3906
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