Di 762 transistor
Abstract: transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33
Text: an AMP company Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz PHI 920-33 v2.01 Features NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System
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PH1920-33
lN4245
73050258-S
Di 762 transistor
transistor a015
transistor npn a 1930
wacom connector
wacom
33w NPN
13MM
PH1920-33
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transistor c 933
Abstract: transistor j5 Transistor 933 13MM transistor c 144 572 transistor 933 TRANSISTOR 30 w RF POWER TRANSISTOR NPN
Text: an AMP comDanv Wireless Power Transistor, 33W 1805 - 1880 MHz PHl819-33 v2.01 I- Features l l l l l NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffksed Emitter Ballasting Gold Metallization System
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PHl819-33
Tl50M50A
AlC100A
transistor c 933
transistor j5
Transistor 933
13MM
transistor c 144
572 transistor
933 TRANSISTOR
30 w RF POWER TRANSISTOR NPN
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Untitled
Abstract: No abstract text available
Text: PH1819-33 Wireless Bipolar Power Transistor 33W, 1805-1880 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter Class AB operation Internal input and output impedance matching
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PH1819-33
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Untitled
Abstract: No abstract text available
Text: PH1920-33 Wireless Bipolar Power Transistor 33W, 1930-1900 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter class AB operation Internal input and output impedance matching
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PH1920-33
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PH1920-33
Abstract: No abstract text available
Text: PH1920-33 Wireless Bipolar Power Transistor 33W, 1930-1900 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter class AB operation Internal input and output impedance matching
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PH1920-33
PH1920-33
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33w NPN
Abstract: Pacific Wireless PH1819-33
Text: PH1819-33 Wireless Bipolar Power Transistor 33W, 1805-1880 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter Class AB operation Internal input and output impedance matching
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PH1819-33
33w NPN
Pacific Wireless
PH1819-33
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transistor j5
Abstract: ER105 diode j54 PH1920-45 transistor npn a 1930 wacom transistor 930 1/transistor j5
Text: SE z-z * =g = -= -A = = -r an AMP company Wireless Bipolar Power Transistor, 45W 1930 - 1990 MHz PHI 920-45 Features NPN Silicon Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Diffused Emitter Ballasting Gold Metalization System
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB0912M350 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M350 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing
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IB0912M350
IB0912M350
IB0912M350-REV-NC-DS-REV-D
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WP-22
Abstract: No abstract text available
Text: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz
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RT240J
RT240
50MHz
40dBm
43dBm
900MHz
IMT-2000
WP-22
WP-12
RT240
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Untitled
Abstract: No abstract text available
Text: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz
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RT240J
RT240
50MHz
40dBm
43dBm
900MHz
IMT-2000
WP-22
WP-12
RT240
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free transistor equivalent book 2sc
Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJHV0SG00
free transistor equivalent book 2sc
uPA1556AH
The Japanese Transistor Manual 1981
samsung UHF/VHF TV Tuner
MOSFET cross-reference 2sk
PD431000A-X
upper arm digital sphygmomanometer circuit diagram
PD72001
uPC1237
uPC 2002
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RA33H1516M1
Abstract: RA33H1516M1-101 VDD1015
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to
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RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
RA33H1516M1-101
VDD1015
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ra33h1516m1
Abstract: RA33H1516M1-101 RF MODULE CIRCUIT DIAGRAM trichloroethylene
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to
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RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
RA33H1516M1-101
RF MODULE CIRCUIT DIAGRAM
trichloroethylene
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ra33h1516m1
Abstract: RF power amplifier 10mW RF MOSFET MODULE RF MODULE CIRCUIT DIAGRAM for channel 4 MOSFET Amplifier Module v 33w marking transistor RF
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to
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RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
RF power amplifier 10mW
RF MOSFET MODULE
RF MODULE CIRCUIT DIAGRAM for channel 4
MOSFET Amplifier Module
v 33w
marking transistor RF
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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1N4Z45
Abstract: T33 transistor
Text: Atím m w an A M P com pany Wireless Power Transistor, 33W 1805-1880 MHz PH1819-33 V2.01 Features • NPN Silicon M icrow ave P o w er Transistor • C o m m o n Km itter C lass AB O peratio n • In tern al In pu t and O utpu t Im p ed an ce M atching • D iffu sed Km itter B allastin g
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PH1819-33
1N4Z45
T33 transistor
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Untitled
Abstract: No abstract text available
Text: Coming Attractions m an A M P com pany Wireless Bipolar Power Transistor, 45W 1930-1990 MHz PH1920-45 V 1.00 Features • • • • • NPN Silicon Power Transistor Com m on Emitter Class AB O peration Internal Input and O u tp u t Im pedance Matching Diffused Emitter Ballasting
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PH1920-45
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transistor 33w
Abstract: 33w NPN
Text: m an A M P com pany Wireless Bipolar Power Transistor, 33W 1930-1990 MHz Features PH1920-33 .744 18,90 -.560(14.22)- - • • • • • NPN Silicon M icrow ave P o w er T ran sisto r C o m m o n Km itter C lass AB O peratio n Intern al Inpu t and O utput Im p ed an ce M atching
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PH1920-33
1N4245
transistor 33w
33w NPN
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2N6111
Abstract: 2N6288
Text: 2N6288 NPN PLASTIC POWER TRANSISTOR Complementary 2N6111 General Purpose Amplifier and Switching Applications DIM A B C E F G H J K L M N MIN 14.42 9,63 3.56 MAX 16.51 10.67 4.83 0.90 1.15 1,40 3.75 3.88 2.29 2.79 2,54 3.43 0,56 12.70 14,73 6,35 2.03 2,92
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2N6288
2N6288
2N6111
2N6111
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SC2714 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2 S C 2 7 14 Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS FM, RF, MIX, IF AM PLIFIER APPLICATIONS • • + 0.5 2 .5 - 0 .3 Small Reverse Transfer Capacitance : Cre = 0.7pF (Typ.)
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2SC2714
100MHz)
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m57745
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M57745 430-450MHZ, 12.5V, 33W, SSB MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm PIN : Pin VBB d VCC1 ®VCC2 ®Po ©GND : RF INPUT : BASE BIAS : 1st. DC SUPPLY : 2nd. DC SUPPLY : RF OUTPUT : FIN H3 ABSOLUTE MAXIMUM RATINGS Tc = 25'C unless otherwise noted)
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M57745
430-450MHZ,
m57745
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430-450MHZ
Abstract: tc 122 25 6d
Text: MITSUBISHI RF POWER MODULE M57745 430-450MHz, 12.5V, 33W, SSB MOBILE RADIO PIN : P in :R F INPUT VBB : BASE BiAS SUPPLY ®VCC1 : 1 s t DC SUPPLY 0 V C C 2 : 2nd. DC SUPPLY ®PO : RF O U TPUT ® G N D : FIN ABSOLUTE MAXIMUM RATINGS Tc = 2 5 t; unless otherwise noted
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M57745
430-450MHz,
430-450MHZ
tc 122 25 6d
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transistor tl 430 c
Abstract: M57745 p01 transistor transistor ZG o7040 12C TRANSISTOR TRANSISTOR JC
Text: MITSUBISHI RF POWER MODULE M57745 430-450MHZ, 12.5V, 33W, SSB MOBILE RADIO O U TLIN E DR AW ING D im ensions in mm PIN : P in RF INPUT ©VBB BASE BIAS SUPPLY VCC1 1st. DC SUPPLY @ VCC2 2nd. DC SUPPLY ©PO RF OUTPUT ©GND FIN A B SO LU TE M AXIM UM R A TING S Tc = 2 5 unless otherwise noted
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M57745
430-450MHZ,
transistor tl 430 c
M57745
p01 transistor
transistor ZG
o7040
12C TRANSISTOR
TRANSISTOR JC
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M57745 4 3 0 -4 5 0 M H Z , O U TLIN E DR AW ING 12.5V, 33W, SSB MOBILE RADIO Dimensions in mm PIN : Pin <2>v b b vcci @VCC2 ®PO ©GND RF INPUT BASE BIAS SUPPLY 1st. DC SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN A B SO LU TE M AXIM UM RA TIN G S Tc = 2 5 <1C unless otherwise noted
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M57745
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