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    TRANSISTOR 33W Search Results

    TRANSISTOR 33W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 33W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Di 762 transistor

    Abstract: transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33
    Text: an AMP company Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz PHI 920-33 v2.01 Features NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System


    Original     		PDF PH1920-33 lN4245 73050258-S Di 762 transistor transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33

    transistor c 933

    Abstract: transistor j5 Transistor 933 13MM transistor c 144 572 transistor 933 TRANSISTOR 30 w RF POWER TRANSISTOR NPN
    Text: an AMP comDanv Wireless Power Transistor, 33W 1805 - 1880 MHz PHl819-33 v2.01 I- Features l l l l l NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffksed Emitter Ballasting Gold Metallization System


    Original     		PDF PHl819-33 Tl50M50A AlC100A transistor c 933 transistor j5 Transistor 933 13MM transistor c 144 572 transistor 933 TRANSISTOR 30 w RF POWER TRANSISTOR NPN

    Untitled

    Abstract: No abstract text available
    Text: PH1819-33 Wireless Bipolar Power Transistor 33W, 1805-1880 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter Class AB operation Internal input and output impedance matching


    Original     		PDF PH1819-33

    Untitled

    Abstract: No abstract text available
    Text: PH1920-33 Wireless Bipolar Power Transistor 33W, 1930-1900 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter class AB operation Internal input and output impedance matching


    Original     		PDF PH1920-33

    PH1920-33

    Abstract: No abstract text available
    Text: PH1920-33 Wireless Bipolar Power Transistor 33W, 1930-1900 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter class AB operation Internal input and output impedance matching


    Original     		PDF PH1920-33 PH1920-33

    33w NPN

    Abstract: Pacific Wireless PH1819-33
    Text: PH1819-33 Wireless Bipolar Power Transistor 33W, 1805-1880 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter Class AB operation Internal input and output impedance matching


    Original     		PDF PH1819-33 33w NPN Pacific Wireless PH1819-33

    transistor j5

    Abstract: ER105 diode j54 PH1920-45 transistor npn a 1930 wacom transistor 930 1/transistor j5
    Text: SE z-z * =g = -= -A = = -r an AMP company Wireless Bipolar Power Transistor, 45W 1930 - 1990 MHz PHI 920-45 Features NPN Silicon Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Diffused Emitter Ballasting Gold Metalization System


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB0912M350 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M350 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing


    Original     		PDF IB0912M350 IB0912M350 IB0912M350-REV-NC-DS-REV-D

    WP-22

    Abstract: No abstract text available
    Text: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz


    Original     		PDF RT240J RT240 50MHz 40dBm 43dBm 900MHz IMT-2000 WP-22 WP-12 RT240

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz


    Original     		PDF RT240J RT240 50MHz 40dBm 43dBm 900MHz IMT-2000 WP-22 WP-12 RT240

    free transistor equivalent book 2sc

    Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		PDF X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002

    RA33H1516M1

    Abstract: RA33H1516M1-101 VDD1015
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to


    Original     		PDF RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz RA33H1516M1-101 VDD1015

    ra33h1516m1

    Abstract: RA33H1516M1-101 RF MODULE CIRCUIT DIAGRAM trichloroethylene
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to


    Original     		PDF RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz RA33H1516M1-101 RF MODULE CIRCUIT DIAGRAM trichloroethylene

    ra33h1516m1

    Abstract: RF power amplifier 10mW RF MOSFET MODULE RF MODULE CIRCUIT DIAGRAM for channel 4 MOSFET Amplifier Module v 33w marking transistor RF
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to


    Original     		PDF RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz RF power amplifier 10mW RF MOSFET MODULE RF MODULE CIRCUIT DIAGRAM for channel 4 MOSFET Amplifier Module v 33w marking transistor RF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    1N4Z45

    Abstract: T33 transistor
    Text: Atím m w an A M P com pany Wireless Power Transistor, 33W 1805-1880 MHz PH1819-33 V2.01 Features • NPN Silicon M icrow ave P o w er Transistor • C o m m o n Km itter C lass AB O peratio n • In tern al In pu t and O utpu t Im p ed an ce M atching • D iffu sed Km itter B allastin g


    OCR Scan     		PDF PH1819-33 1N4Z45 T33 transistor

    Untitled

    Abstract: No abstract text available
    Text: Coming Attractions m an A M P com pany Wireless Bipolar Power Transistor, 45W 1930-1990 MHz PH1920-45 V 1.00 Features • • • • • NPN Silicon Power Transistor Com m on Emitter Class AB O peration Internal Input and O u tp u t Im pedance Matching Diffused Emitter Ballasting


    OCR Scan     		PDF PH1920-45

    transistor 33w

    Abstract: 33w NPN
    Text: m an A M P com pany Wireless Bipolar Power Transistor, 33W 1930-1990 MHz Features PH1920-33 .744 18,90 -.560(14.22)- - • • • • • NPN Silicon M icrow ave P o w er T ran sisto r C o m m o n Km itter C lass AB O peratio n Intern al Inpu t and O utput Im p ed an ce M atching


    OCR Scan     		PDF PH1920-33 1N4245 transistor 33w 33w NPN

    2N6111

    Abstract: 2N6288
    Text: 2N6288 NPN PLASTIC POWER TRANSISTOR Complementary 2N6111 General Purpose Amplifier and Switching Applications DIM A B C E F G H J K L M N MIN 14.42 9,63 3.56 MAX 16.51 10.67 4.83 0.90 1.15 1,40 3.75 3.88 2.29 2.79 2,54 3.43 0,56 12.70 14,73 6,35 2.03 2,92


    OCR Scan     		PDF 2N6288 2N6288 2N6111 2N6111

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SC2714 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2 S C 2 7 14 Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS FM, RF, MIX, IF AM PLIFIER APPLICATIONS • • + 0.5 2 .5 - 0 .3 Small Reverse Transfer Capacitance : Cre = 0.7pF (Typ.)


    OCR Scan     		PDF 2SC2714 100MHz)

    m57745

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M57745 430-450MHZ, 12.5V, 33W, SSB MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm PIN : Pin VBB d VCC1 ®VCC2 ®Po ©GND : RF INPUT : BASE BIAS : 1st. DC SUPPLY : 2nd. DC SUPPLY : RF OUTPUT : FIN H3 ABSOLUTE MAXIMUM RATINGS Tc = 25'C unless otherwise noted)


    OCR Scan     		PDF M57745 430-450MHZ, m57745

    430-450MHZ

    Abstract: tc 122 25 6d
    Text: MITSUBISHI RF POWER MODULE M57745 430-450MHz, 12.5V, 33W, SSB MOBILE RADIO PIN : P in :R F INPUT VBB : BASE BiAS SUPPLY ®VCC1 : 1 s t DC SUPPLY 0 V C C 2 : 2nd. DC SUPPLY ®PO : RF O U TPUT ® G N D : FIN ABSOLUTE MAXIMUM RATINGS Tc = 2 5 t; unless otherwise noted


    OCR Scan     		PDF M57745 430-450MHz, 430-450MHZ tc 122 25 6d

    transistor tl 430 c

    Abstract: M57745 p01 transistor transistor ZG o7040 12C TRANSISTOR TRANSISTOR JC
    Text: MITSUBISHI RF POWER MODULE M57745 430-450MHZ, 12.5V, 33W, SSB MOBILE RADIO O U TLIN E DR AW ING D im ensions in mm PIN : P in RF INPUT ©VBB BASE BIAS SUPPLY VCC1 1st. DC SUPPLY @ VCC2 2nd. DC SUPPLY ©PO RF OUTPUT ©GND FIN A B SO LU TE M AXIM UM R A TING S Tc = 2 5 unless otherwise noted


    OCR Scan     		PDF M57745 430-450MHZ, transistor tl 430 c M57745 p01 transistor transistor ZG o7040 12C TRANSISTOR TRANSISTOR JC

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M57745 4 3 0 -4 5 0 M H Z , O U TLIN E DR AW ING 12.5V, 33W, SSB MOBILE RADIO Dimensions in mm PIN : Pin <2>v b b vcci @VCC2 ®PO ©GND RF INPUT BASE BIAS SUPPLY 1st. DC SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN A B SO LU TE M AXIM UM RA TIN G S Tc = 2 5 <1C unless otherwise noted


    OCR Scan     		PDF M57745