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    TRANSISTOR 331 8 Search Results

    TRANSISTOR 331 8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 331 8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    phototransistor 650 nm

    Abstract: Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor
    Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features


    Original     		PDF Q62702-P1634 OHF01924 GPL06924 phototransistor 650 nm Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor

    transistor h 331

    Abstract: c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm
    Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features


    Original     		PDF 331-JK Q62702-P1634 GPLY6924 transistor h 331 c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm

    8060 transistor

    Abstract: 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45
    Text: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts,


    Original     		PDF 8060-1G11 8060-1G6 MIL-S-83502/2 MIL-S-83502/5. 8060 transistor 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45

    transistor d-331

    Abstract: No abstract text available
    Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar


    Original     		PDF 331-JK Q65110A2821 transistor d-331

    phototransistor 650 nm

    Abstract: phototransistor peak 550 nm
    Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar


    Original     		PDF 331-JK Q65110A2821 2006-0y phototransistor 650 nm phototransistor peak 550 nm

    transistor d 331

    Abstract: D F 331 TRANSISTOR d 331 TRANSISTOR equivalent switching transistor 331 Q62702-P1634 phototransistor 650 nm phototransistor peak 550 nm transistor d 331 data c 331 transistor transistor C 331
    Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten


    Original     		PDF 331-JK Q62702-P1634 transistor d 331 D F 331 TRANSISTOR d 331 TRANSISTOR equivalent switching transistor 331 Q62702-P1634 phototransistor 650 nm phototransistor peak 550 nm transistor d 331 data c 331 transistor transistor C 331

    Untitled

    Abstract: No abstract text available
    Text: l^asu ^E.mi-(2ond\jLcto\ (inc. C/ 4/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)237-6005 FAX: (973) 376-8960 BLY87C VHP power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,


    Original     		PDF BLY87C OT120A

    BLF521

    Abstract: No abstract text available
    Text: J. Cx t/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF power MOS transistor FEATURES BLF521 PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability


    Original     		PDF BLF521 OT172D OT172D BLF521

    current fed push pull topology

    Abstract: "CHAPTER 1 Introduction to Power Semiconductors" Power Semiconductor Applications Philips Semiconductors transistor Electronic ballast "INDUCTION LAMP" "Power Semiconductor Applications" Philips 40w ELECTRONIC choke BALLAST DIAGRAM 230v 40w fluorescent lamp inverter circuit circuit diagram electronic ballast for 40W tube l circuit diagram electronic choke for tube light CHAPTER 1 Introduction to Power Semiconductors
    Text: Lighting Power Semiconductor Applications Philips Semiconductors CHAPTER 8 Lighting 8.1 Fluorescent Lamp Control 575 Lighting Power Semiconductor Applications Philips Semiconductors Fluorescent Lamp Control 577 Lighting Power Semiconductor Applications Philips Semiconductors


    Original     		PDF 50/60Hz current fed push pull topology "CHAPTER 1 Introduction to Power Semiconductors" Power Semiconductor Applications Philips Semiconductors transistor Electronic ballast "INDUCTION LAMP" "Power Semiconductor Applications" Philips 40w ELECTRONIC choke BALLAST DIAGRAM 230v 40w fluorescent lamp inverter circuit circuit diagram electronic ballast for 40W tube l circuit diagram electronic choke for tube light CHAPTER 1 Introduction to Power Semiconductors

    2N5004

    Abstract: 2N5002
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/534 DEVICES LEVELS 2N5002 2N5004 JAN JANTX JANTXV JANS


    Original     		PDF MIL-PRF-19500/534 2N5002 2N5004 500mA, 10MHz 10Vdc 500mAdc -500mAdc 2N5004 2N5002

    Frequency-to-Voltage Converter lm331

    Abstract: photo transistor L14F L14G LM331 "Voltage-to-Frequency Converter" L14F LM231 LM231A Frequency-to-Voltage Converter "Voltage-to-Frequency Converters"
    Text: LM231A/LM231/LM331A/LM331 Precision Voltage-to-Frequency Converters General Description The LM231/LM331 family of voltage-to-frequency converters are ideally suited for use in simple low-cost circuits for analog-to-digital conversion, precision frequency-to-voltage


    Original     		PDF LM231A/LM231/LM331A/LM331 LM231/LM331 LM231A/LM331A LM231A/LM231/LM331A/LM331 Frequency-to-Voltage Converter lm331 photo transistor L14F L14G LM331 "Voltage-to-Frequency Converter" L14F LM231 LM231A Frequency-to-Voltage Converter "Voltage-to-Frequency Converters"

    Untitled

    Abstract: No abstract text available
    Text: BCX56-10R1 Preferred Device NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-89 package, which is designed for medium power surface mount applications.


    Original     		PDF BCX56-10R1 OT-89 inch/1000 100mA 250mA 500mA

    spice model LM231

    Abstract: Application notes LM231 Voltage-to-Frequency Converters LM331N Frequency-to-Voltage Converter lm331 AN210 digital frequency meter circuit diagram vfc max b LB-45 AN278 L14F1 pin diagram
    Text: LM231A/LM231/LM331A/LM331 Precision Voltage-to-Frequency Converters General Description The LM231/LM331 family of voltage-to-frequency converters are ideally suited for use in simple low-cost circuits for analog-to-digital conversion, precision frequency-to-voltage


    Original     		PDF LM231A/LM231/LM331A/LM331 LM231/LM331 AN-278: 2-Sep-2000] 28-Jun- 9-Apr96 4-Nov95 spice model LM231 Application notes LM231 Voltage-to-Frequency Converters LM331N Frequency-to-Voltage Converter lm331 AN210 digital frequency meter circuit diagram vfc max b LB-45 AN278 L14F1 pin diagram

    Frequency-to-Voltage Converter lm331

    Abstract: Voltage-to-Frequency Converters LM331N L14f photo transistor LB-45 331AN AN278
    Text: LM231A/LM231/LM331A/LM331 Precision Voltage-to-Frequency Converters General Description The LM231/LM331 family of voltage-to-frequency converters are ideally suited for use in simple low-cost circuits for analog-to-digital conversion, precision frequency-to-voltage


    Original     		PDF LM231A/LM231/LM331A/LM331 LM231/LM331 AN-265: Watt-Watt149 AN-278: 5-Aug-95 9-Apr-96 4-Nov-95 5-Aug-2002] Frequency-to-Voltage Converter lm331 Voltage-to-Frequency Converters LM331N L14f photo transistor LB-45 331AN AN278

    philips bfq

    Abstract: BFQ263 BFQ263A RK 100
    Text: Product specification Philips S em iconductors - r & 3 ~ DESCRIPTION > 5 BFQ263; BFQ263A NPN 1 GHz video transistors • 5bE D PHILIPS IN TE RNATIONAL c 711062t. 0045b4û 331 « P H I N PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with


    OCR Scan     		PDF BFQ263; BFQ263A 711062b 0045bi 711Qfl2b T-33-05 philips bfq BFQ263 BFQ263A RK 100

    C 331 Transistor

    Abstract: transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331
    Text: LINEAR INTEGRATED CIRCUIT TBA 331 GENERAL PURPOSE The TBA 331 is an assembly of 5 silicon NPN transistors on a common monolithic substrate In a Jedec TO-116 14-lead dual in-line plastic package. Two transistors are internally connected to form a differential amplifier.


    OCR Scan     		PDF O-116 14-lead C 331 Transistor transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331

    transistor h 331

    Abstract: D F 331 TRANSISTOR C 331 Transistor transistor d 331 d 331 Transistor transistor 331 p 331 transistor y 331 Transistor transistor 331 VQE 22 led
    Text: SIEMENS SMT Multi TOPLED SFH 331 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type Bestellnummer Ordering Code SFH 331 Q62702-P1634 W esentliche Merkmale • Geeignet für Vapor-Phase Löten und IR-Reflow Löten


    OCR Scan     		PDF Q62702-P1634 hotocurrent/pCE//pCE250 transistor h 331 D F 331 TRANSISTOR C 331 Transistor transistor d 331 d 331 Transistor transistor 331 p 331 transistor y 331 Transistor transistor 331 VQE 22 led

    transistor 373

    Abstract: 8060 transistor
    Text: Catalog 1307612 J & IV IF * Specialty Sockets Revised 7-01 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts, offers many features which allow them to be utilized in the most severe


    OCR Scan     		PDF 8060-1G11 8060-1G6 MIL-S-83502/2 M1L-S-83502/5. transistor 373 8060 transistor

    photo transister

    Abstract: transister "photo transistor" PHOTO TRANSISTOR TRansistor A 940 OC360 Photo diode circuit diagram
    Text: OKI electronic OC360 components PHOTO COUPLER GENERAL DESCRIPTION The OC360 is a photocoupler formed by combining a GaAs infrared light emitting diode and a phototransistor into a two-channel configuration. Encased in an 8-pin plastic package, the OC36C is


    OCR Scan     		PDF OC36Q_ OC360 OC36C) E86831 S4B40 OC360 b72424G photo transister transister "photo transistor" PHOTO TRANSISTOR TRansistor A 940 Photo diode circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: • b 1353131 00E453Q 8H2 « A P X N. AMER PHILIPS/DISCRETE BCP69 b7E ]> J V SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic microminiature envelope, intended for low-voltage, high-current LF applications. QUICK REFERENCE DATA Collector-emitter voltage VgE = 0


    OCR Scan     		PDF 00E453Q BCP69 Q0B4534

    transistor Kd 505

    Abstract: k534 TRANSISTOR D410 transistor DA 218 b058 8060 transistor 805S-IG32 1G22 1G5.1 8060-1G6
    Text: TH IS DRAW ING IS A C O N TR O LLE D DO C U M EN T. REVISIONS T ^ st DATE - p 0 0 28N0V2006 ECO — 05 — Ö9 78 8058 & 8060 Series DWN APVD Kb i/ n d e s c r ip t io n L J Transisto r Sockets 8060-1G11 8060-1G6 FEATURES: — 1^ PERFORMANCE SPECIFICATIONS:


    OCR Scan     		PDF 28N0V2006 8060-1G11 8060-1G6 MIL-S-S3502/2 MIL-S-83502/5. transistor Kd 505 k534 TRANSISTOR D410 transistor DA 218 b058 8060 transistor 805S-IG32 1G22 1G5.1 8060-1G6

    3004x

    Abstract: antenna amplifiers Transistor BFX 25 BFX55 63310-A Q60206-X55
    Text: BFX55 NPN Transistor for VHF output stages in antenna amplifiers B F X 5 5 is an epitaxial NPN silicon planar transistor in a case 5 C 3 DIN 41 873 T O -39 . The colle cto r has been electrically connected to the case. The transistor is especially suitable fo r use in the VHF o u tp u t stages o f channel- and w ideband antenna


    OCR Scan     		PDF BFX55 BFX55 Q60206-X55 50ff1A 3004x antenna amplifiers Transistor BFX 25 63310-A Q60206-X55

    transistor kt 801

    Abstract: S/transistor kt 801 KT 802 transistor a05 801
    Text: SAMSUNG S E MI CONDUCTOR INC MJE800/801/802/803 IME O | 7^4145 000770b NPN EPITAXIAL r - 33 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hpE—750 @ lc= —1.5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complementary to MJE700/701/702/703


    OCR Scan     		PDF MJE800/801/802/803 000770b O-126 MJE700/701/702/703 MJE800/801 MJE802/803 MJEo00/801 GQG77fe transistor kt 801 S/transistor kt 801 KT 802 transistor a05 801

    HF 331 transistor

    Abstract: No abstract text available
    Text: _LL 86D 01952* o o m n o DbE D N AMER PHILIPS/DXSCRETE BLY92A T -3 3 -& 7 D 2 A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and


    OCR Scan     		PDF BLY92A HF 331 transistor