transistor 30054
Abstract: transistor 3005 2 acrian RF POWER TRANSISTOR transistor 3005 i 3005-2 transistor 3005-2 transistor b 30054 acrian ic ACRIAN acrian inc
Text: 0182998 ACRIAN GENERAL INC 97D 0 1 4 7 9 3005 DESCRIPTION 5 WATT - 28 VOLTS 3000 MHz The 3005 is a common base transistor capable of providing 5 watts of CW RF output power at 3000 MHz. This hermetically sealed transistor is specifically designed for telemetry and telecommunications
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transistor 3005
Abstract: No abstract text available
Text: 3005 5 Watts - 28 Volts, Class C Microwave 3000 MHz GENERAL DESCRIPTION CASE OUTLINE The 3005 is a COMMON BASE transistor capable of providing 5 Watts Class C, RF output power at 3000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor
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kst2907
Abstract: No abstract text available
Text: KST2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA»25t: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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KST2907
OT-23
-10mA,
Un-15mA
-500mA,
-50mA
-50mA,
100MHz
-150mA
-15mA
kst2907
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Untitled
Abstract: No abstract text available
Text: KST2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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KST2907
OT-23
300ns,
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Untitled
Abstract: No abstract text available
Text: KST4403 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING TRANSISTOR ABSOLUTE MAXIMUM RATINGS T ,= 2 5 °C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage VcBO Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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KST4403
150mA,
150mA
00E5123
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Philips 2222 050 capacitor
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated
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BFG135
OT223
MSB002
OT223.
711062b
110fi2b
711Da2b
Philips 2222 050 capacitor
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Untitled
Abstract: No abstract text available
Text: KST3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t; C haracteristic Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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KST3906
OT-23
-10fiA,
10fiA,
-10mA,
-10mA
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Untitled
Abstract: No abstract text available
Text: KST2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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KST2907
OT-23
-10mA,
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MPS A13 transistor
Abstract: MPS A13 MPS-A13 MPS-A13-14 MPSA13 MPSA14
Text: MPSA13/14 SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO 30 V Collector-Emitter Voltage V CES 30 V
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A13/14
1000IB
MPS A13 transistor
MPS A13
MPS-A13
MPS-A13-14
MPSA13
MPSA14
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BTS630
Abstract: GDS5163 KSP8598 KSP8599
Text: KSP8598/8599 PNP EPITAXIAL SILICX N TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: VCeo = KSP8598: 60V KSP8599: 80V • C ollector Dissipation: P c max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage
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KSP8598/8599
KSP8598:
KSP8599:
625mW
KSP8598
KSP8599
-100nA,
BTS630
GDS5163
KSP8598
KSP8599
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2N 326 Transistor
Abstract: transistor ESM 3004 DARLINGTON ESM 30 npn 1000V 100a ESM4016 ESM 3004 transistor BU 184 transistor ESM 3001 transistor ESM 2060T darlington NPN 600V 8a transistor
Text: SUPERSWITCH high power transistor MU 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV
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130CIV
109DP
O-220
104DP
CB-70
2N 326 Transistor
transistor ESM 3004
DARLINGTON ESM 30
npn 1000V 100a
ESM4016
ESM 3004
transistor BU 184
transistor ESM 3001
transistor ESM 2060T
darlington NPN 600V 8a transistor
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Untitled
Abstract: No abstract text available
Text: 2N5401 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO -92 • Collector-Emitter Voltage: V c e o = 150 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Em itter Voltage
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2N5401
625mW
Q025Q3Ã
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELE CTRONICS INC 42E D MPSA05 • T'ibMlMS GOO'iDSb b ■ SMGK NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto = 60 V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS(Ta=25°C) Characteristic
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MPSA05
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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2U marking code
Abstract: KST63 2u transistor KST64 MARK 2U MARKING CODE 2I
Text: KST63/64 PNP EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage V cbO -3 0 V Collector-Emitter Voltage -3 0 V Emitter-Base Voltage VcES Vino Collector Current lc
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KST63/64
-100/iA,
KST63
-10mA
KST64
-100mA
b414e
2U marking code
KST63
2u transistor
KST64
MARK 2U
MARKING CODE 2I
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609 transistor
Abstract: KSP62 KSP63 KSP64 S-05
Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP62/63/64 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: V CEs = KSP62: 20V KSP63/64: 30V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Rating Unit K SP62
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KSP62/63/64
KSP62:
KSP63/64:
625mW
KSP62
KSP63/64
100/iA,
00251fc3
609 transistor
KSP62
KSP63
KSP64
S-05
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K1 transistor
Abstract: No abstract text available
Text: KSC1983 NPN EPITAXIAL SILICON TRANSISTOR HIGH 0 POW ER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit Collector-Base Voltage VcBO Symbol 80 V Collector-Emitter Voltage Emitter-Base Voltage Collector Current VcEO 60 V V ebo 6 V lc 3 A Base Current
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KSC1983
--25mA,
K1 transistor
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kst2907 TRANSISTOR PNP
Abstract: KST2907 002-HA
Text: KST2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation Storage Tem perature
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KST2907
OT-23
-10mA,
-10hA,
-150mA
300ns,
kst2907 TRANSISTOR PNP
KST2907
002-HA
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2929 transistor
Abstract: MPSA25 mpsa82 MPSA26 MPSA45 MPSA55 MPSA62 MPSA63 I0204 625MW
Text: SAMSUNG SEMICONDUCTOR INC MPSA26 14E O 00073SM I NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T -2 9 -2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vc*s=50V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Ch aracte ristic
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00073SM
MPSA26
T-29-29
625mW
MPSA25
MPSA62
100/iA,
100mA,
2929 transistor
mpsa82
MPSA45
MPSA55
MPSA63
I0204
625MW
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Untitled
Abstract: No abstract text available
Text: 2N5401 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: V ceo * 150V • CoMactor Dissipation: Pc max *625mW ABSOLUTE MAXIMUM RATINGS (TA-2 5 t:) C h aracteristic Collector-Base Voltage Coltector-Em itter Voltage Em itter-Base Voltage
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2N5401
625mW
-250mA,
-30CH500
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ksp2907
Abstract: No abstract text available
Text: KSP2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Em itter Voltage: V c e o ” 40V • Collector Dissipation: Pc max «625mW ABSOLUTE MAXIMUM RATINGS <Ta= 2 5 T :) C haracteristic Collector-Base Voltage Collector-Em itter Voltage
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KSP2907
625mW
-50mA,
100MHz
-150mA
-15mA
-150mA
ksp2907
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC MMBT5401 M2E D • 7^4142 0 0 C H Û 4 7 S ■ SMGK PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage ■
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MMBT5401
OT-23
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WS300
Abstract: No abstract text available
Text: KSP55/56 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Em itter Voltage: V Ceo * K S P 5 5 : 60V KSPS6:80V • Collector Dissipation: Pc max “ 625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) Sym bol C haracteristic Collector-Base Voltage
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KSP55/56
625mW
KSP55
KSP56
-10mA
-100mA
WS300
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MPSA27
Abstract: MPSA77 MPS-A27
Text: SEMICONDUCTOR MPSA77 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES A ᴌComplementary to MPSA27. N E K G J D MAXIMUM RATINGS Ta=25ᴱ UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCES -60 V Emitter-Base Voltage
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MPSA77
MPSA27.
MPSA27
MPSA77
MPS-A27
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