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    2929 transistor

    Abstract: MPSA25 mpsa82 MPSA26 MPSA45 MPSA55 MPSA62 MPSA63 I0204 625MW
    Text: SAMSUNG SEMICONDUCTOR INC MPSA26 14E O 00073SM I NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T -2 9 -2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vc*s=50V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Ch aracte ristic


    OCR Scan     		PDF 00073SM MPSA26 T-29-29 625mW MPSA25 MPSA62 100/iA, 100mA, 2929 transistor mpsa82 MPSA45 MPSA55 MPSA63 I0204 625MW

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    Abstract: No abstract text available
    Text: SA MS UNG SEM ICO ND UC TOR INC MPSA26 14E D I 00073SM 4 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T -2 9-2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: V c* s = 5 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF MPSA26 625mW 00073SM MPSA25