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    TRANSISTOR 2X2 Search Results

    TRANSISTOR 2X2 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2X2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CTLT8099-M322S w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT8099-M322S is a silicon transistor manufactured by the epitaxial planar process, epoxy molded in a low profile, 2x2mm TLM surface mount package, designed for general


    Original     		PDF CTLT8099-M322S TLM322S 100mA, 100mA 100MHz 10-October

    Untitled

    Abstract: No abstract text available
    Text: CTLT8099-M322S w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT8099-M322S is a silicon transistor manufactured by the epitaxial planar process, epoxy molded in a low profile, 2x2mm TLM surface mount package, designed for general


    Original     		PDF CTLT8099-M322S CTLT8099-M322S TLM322S 100mA, 100mA 100MHz 29-March

    Untitled

    Abstract: No abstract text available
    Text: CTLT8099-M322S w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT8099-M322S is a silicon transistor manufactured by the epitaxial planar process, epoxy molded in a low profile, 2x2mm TLM surface mount package, designed for general


    Original     		PDF CTLT8099-M322S CTLT8099-M322S TLM322S 100mA, 100mA 100MHz 10-October

    DTC114E

    Abstract: 2SA2018 FUMF21N 2SA20 transistor F21
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Power management Dual-transistors FUMF21N TRANSISTOR WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar transistor FEATURES z 2SA2018 and DTC114E are housed independently in a package.


    Original     		PDF WBFBP-06C FUMF21N WBFBP-06C 2SA2018 DTC114E 100MHz FUMF21N 2SA20 transistor F21

    FJMA790

    Abstract: No abstract text available
    Text: FJMA790 tm PNP Epitaxial Silicon Transistor High current surface mount PNP silicon switching transistor for load management in portable applications • High Collector current • Low Collector-Emitter Saturation Voltage • RoHS Compliant RoHS Compliant Pin 1


    Original     		PDF FJMA790 FJMA790

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Power management Dual-transistors FUMF21N TRANSISTOR WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar transistor FEATURES z 2SA2018 and DTC114E are housed independently in a package.


    Original     		PDF WBFBP-06C FUMF21N WBFBP-06C 2SA2018 DTC114E 100MHz

    Untitled

    Abstract: No abstract text available
    Text: FJMA790 tm PNP Epitaxial Silicon Transistor High current surface mount PNP silicon switching transistor for load management in portable applications • High Collector current • Low Collector-Emitter Saturation Voltage • RoHS Compliant Pin 1 Pin 3 Collector


    Original     		PDF FJMA790 FJMA790

    FJMA790

    Abstract: CO75
    Text: FJMA790 tm PNP Epitaxial Silicon Transistor High current surface mount PNP silicon switching transistor for load management in portable applications • High Collector current • Low Collector-Emitter Saturation Voltage • RoHS Compliant Pin 1 Pin 3 Collector


    Original     		PDF FJMA790 FJMA790 CO75

    BR 5551

    Abstract: 5551 datasheet transistor 5401 ic for cd rom FMMDT5451 5551 application for 5401 TRANSISTOR 5551 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Transistors FMMDT5451 TRANSISTOR DESCRIPTION PNP and NPN Epitaxial Silicon Transistor WBFBP-06C 2x2×0.5 unit: mm FEATURES Complementary Pair z One 5551-Type NPN, One 5401-Type PNP


    Original     		PDF WBFBP-06C FMMDT5451 WBFBP-06C 5551-Type 5401-Type -10mA 100MHz BR 5551 5551 datasheet transistor 5401 ic for cd rom FMMDT5451 5551 application for 5401 TRANSISTOR 5551 transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Transistors FMMDT5451 TRANSISTOR DESCRIPTION PNP and NPN Epitaxial Silicon Transistor WBFBP-06C 2x2×0.5 unit: mm FEATURES Complementary Pair z One 5551-Type NPN, One 5401-Type PNP


    Original     		PDF WBFBP-06C FMMDT5451 WBFBP-06C 5551-Type 5401-Type -10mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-05C Digital transistors built-in resistors FUMG9N TRANSISTOR WBFBP-05C (2x2×0.5) unit: mm DESCRIPTION Epitaxial planar type NPN silicon transistor (Built-in resistor type) FEATURES z Two DTC114E in a package.


    Original     		PDF WBFBP-05C WBFBP-05C DTC114E 100MHz

    marking A1 TRANSISTOR

    Abstract: marking G9 transistor 05c transistor marking G9 DTC114E
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-05C Digital transistors built-in resistors FUMG9N TRANSISTOR WBFBP-05C (2x2×0.5) unit: mm DESCRIPTION Epitaxial planar type NPN silicon transistor (Built-in resistor type) FEATURES z Two DTC114E in a package.


    Original     		PDF WBFBP-05C WBFBP-05C DTC114E 100MHz marking A1 TRANSISTOR marking G9 transistor 05c transistor marking G9

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra ILD1214EL200 TECHNOLOGIES, INC. L-Band RF Power LDMOS Transistor Silicon LDMOS  High Power Gain  Superior Thermal Stability The high power pulsed transistor part number ILD1214EL200 is designed for L-Band systems operating at 1.215–1.400 GHz. Operating at a pulse width of 16ms


    Original     		PDF ILD1214EL200 ILD1214EL200 ILD1214EL200-REV-NC-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra ILD1214L250 TECHNOLOGIES, INC. L-Band RF Power LDMOS Transistor Silicon LDMOS − High Power Gain − Superior thermal stability The high power pulsed transistor part number ILD1214L250 is designed for L-Band systems operating at 1.2–1.4 GHz. Operating at a pulse width of 1ms with


    Original     		PDF ILD1214L250 ILD1214L250 ILD1214L250-REV-NC-DS-REV-A

    MCP73830LT

    Abstract: MCP73830T MCP73830 "Charge Management Controller"
    Text: MCP73830/L Single-Cell Li-Ion/Li-Polymer Battery Charge Management Controllers in 2x2 TDFN Features Description • Complete Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Integrated Reverse Discharge Protection


    Original     		PDF MCP73830/L MCP73830L: MCP73830: DS25049B-page MCP73830LT MCP73830T MCP73830 "Charge Management Controller"

    Untitled

    Abstract: No abstract text available
    Text: MCP73830/L Single-Cell Li-Ion/Li-Polymer Battery Charge Management Controllers in 2x2 TDFN Features: Description: • Complete Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Integrated Reverse Discharge Protection


    Original     		PDF MCP73830/L MCP73830L: MCP73830: Aut60-4-227-8870

    Untitled

    Abstract: No abstract text available
    Text: MCP73830/L Single-Cell Li-Ion/Li-Polymer Battery Charge Management Controllers in 2x2 TDFN Features: Description: • Complete Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Integrated Reverse Discharge Protection


    Original     		PDF MCP73830/L MCP73830L: MCP73830: DS20005049C-page

    Untitled

    Abstract: No abstract text available
    Text: MCP73830/L Single-Cell Li-Ion/Li-Polymer Battery Charge Management Controllers in 2x2 TDFN Features Description • Complete Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Integrated Reverse Discharge Protection


    Original     		PDF MCP73830/L MCP73830L: MCP73830: DS25049B-page

    2n297a

    Abstract: 2n297
    Text: 2N297 A 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 POWER TRANSISTOR GERMANIUM PNP POWER TRANSISTOR 2N297A is a germanium PNP alloy junction power t r a n s i > t o r m e r t i n g m i l i t a r y specification MlL-T-19500 36A


    Original     		PDF 2N297 2N297A MlL-T-19500 2X297A

    1000w inverter PURE SINE WAVE schematic diagram

    Abstract: 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w Power Semiconductor Applications Philips Semiconductors SCHEMATIC 1000w smps smps circuit diagram 48V SMPS 1000w "Power Semiconductor Applications" Philips BU2508 Transistor 500w SINE WAVE inverter schematic diagram smps 1kW
    Text: S.M.P.S. Power Semiconductor Applications Philips Semiconductors CHAPTER 2 Switched Mode Power Supplies 2.1 Using Power Semiconductors in Switched Mode Topologies including transistor selection guides 2.2 Output Rectification 2.3 Design Examples 2.4 Magnetics Design


    Original     		PDF

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    GS 78L05

    Abstract: BH RV transistor pp16 BLF368
    Text: DISCRETE SEMICONDUCTORS BLF368 VHF push-pull power MOS transistor Product specification Supersedes data of September 1992 File under Discrete Semiconductors, SC19a Philips Sem iconductors 1998 Jul 29 PHILIPS Philips Semiconductors Product specification VHF push-pull power MOS transistor


    OCR Scan     		PDF BLF368 SC19a BLF368 OT262A1 125108/00/03/pp16 GS 78L05 BH RV transistor pp16

    TV power transistor

    Abstract: PTB20101
    Text: ERICSSON PTB 20101 175 Watts P-Sync, 470 - 860 MHz UHF TV Power Transistor Key Features Description • • • • • The 20101 is a class AB, NPN, common emitter RF Power Transistor intended for 28 VDC operation across the 470-860 MHz frequency band. It is rated at 175 Watts P-Sync mini­


    OCR Scan     		PDF 2x200mA 2x200mA TV power transistor PTB20101

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF