TRANSISTOR 2X W Search Results

TRANSISTOR 2X W Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR 2X W Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
LMBT4401LT1G Abstract: 1N916 LMBT4401LT1 Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. LMBT4401LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT4401LT1G 2X 3000/Tape & Reel LMBT4401LT3G 2X 10000/Tape & Reel	Original	LMBT4401LT1G 3000/Tape LMBT4401LT3G 10000/Tape OT-23 LMBT4401LT1G 1N916 LMBT4401LT1	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. LMBT4401WT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT4401WT1G 2X 3000/Tape & Reel LMBT4401WT3G 2X 10000/Tape & Reel	Original	LMBT4401WT1G 3000/Tape LMBT4401WT3G 10000/Tape SC-70	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT4401LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT4401LT1G 2X 3000/Tape & Reel LMBT4401LT3G 2X 10000/Tape & Reel	Original	LMBT4401LT1G 3000/Tape LMBT4401LT3G 10000/Tape	PDF
TBA950 Abstract: TBA950-2X TBA 950 2x 2X transistor TBA9502X Phase Control Circuit RC oscillator in inverter circuit diagram filter stage flyback 50hz oscillator inverter Circuit diagram 15625-Hz Text: TBA950:2X APLESSEY W Sem iconductors, FOR MAINTENANCE PURPOSES ONLY: DO NOT USE FOR NEW DESIGNS TBA950: 2X LINE OSCILLATOR COMBINATION The T B A 9 5 0 :2 X is a monolithic integrated circuit for pulse separation and line synchronisation in TV receivers with transistor output stages.	OCR Scan	TBA950 TBA950: TBA950-2X TBA 950 2x 2X transistor TBA9502X Phase Control Circuit RC oscillator in inverter circuit diagram filter stage flyback 50hz oscillator inverter Circuit diagram 15625-Hz	PDF
2X transistor sot 353 Abstract: SOT-353 Silicon NPN Epitaxial Planar Type SRC1207 SUR521H marking code GI Text: SUR521H Semiconductor Epitaxial Planar Type NPN Silicon Transistor Description • Digital transistor Features • Two SRC1207 chips in SOT-353 package • With built-in bias resistors Ordering Information Type NO. Marking SUR521H Package Code 2X SOT-353 Outline Dimensions	Original	SUR521H SRC1207 OT-353 OT-353 KST-5007-000 2X transistor sot 353 SOT-353 Silicon NPN Epitaxial Planar Type SUR521H marking code GI	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR NPN SOT-23 FEATURES Switching transistor 1. BASE 2. EMITTER MARKING: MMBT4401=2X 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	OT-23 MMBT4401 OT-23 MMBT4401 -55to 150mA 150mA, 100MHz	PDF
MMBT4401 Abstract: marking 2X SOT23 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR NPN SOT-23 FEATURES Switching transistor 1. BASE 2. EMITTER MARKING: MMBT4401=2X 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-23 MMBT4401 OT-23 MMBT4401 -55to 150mA 150mA, 100MHz marking 2X SOT23	PDF
SMD transistor 2x sot 23 Abstract: TRANSISTOR SMD 2X K CMBT4401 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N–P–N transistor Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration	Original	OT-23 CMBT4401 C-120 SMD transistor 2x sot 23 TRANSISTOR SMD 2X K CMBT4401	PDF
BLV25 Abstract: No abstract text available Text: BLV25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG A C The ASI BLV25 is a 28 V silicon NPN power transistor designed primarily for VHF FM broadcast transmitters. 1 2 2x Ø N FULL R D FEATURES: 3 • 28 V operation • PG = 10 dB at 175 W/108 MHz	Original	BLV25 BLV25	PDF
ASI10531 Abstract: ASI2223-4 Text: ASI2223-4 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2NL FLG The ASI 2223-4 is a common Base transistor capable of providing 4 W, ClassC output power over the band 2220-2300 MHz. A C .025 x 45° 4x .062 x 45° 2X B B ØD C E F E G FEATURES:	Original	ASI2223-4 ASI10531 ASI2223-4	PDF
BLV25 Abstract: No abstract text available Text: BLV25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG A C The ASI BLV25 is a 28 V silicon NPN power transistor designed primarily for VHF FM broadcast transmitters. 2 1 2x Ø N FU LL R D FEATURES: 4 3 • 28 V operation • PG = 1.0 dB at 175 W/108 MHz	Original	BLV25 BLV25	PDF
sd1441 Abstract: SD-1441 Text: SD1441 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1441 is a12.5 V epitaxial silicon NPN plannar transistor. Designed primarily for VHF communication in the 175 MHz frequency. PACKAGE STYLE .500 6L FLG A C FEATURES: 1 3 2x Ø N FULL R • 175 MHz 12.5 V	Original	SD1441 SD1441 SD-1441	PDF
2SC2782 Abstract: NPN 2SC2782 transistor 2sc2782 Text: 2SC2782 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band. PACKAGE STYLE .500 6L FLG A C 1 3 2x Ø N FULL R D FEATURES: 2 • 175 MHz 12.5 V	Original	2SC2782 2SC2782 to175 NPN 2SC2782 transistor 2sc2782	PDF
MRF247 Abstract: amplifier mrf247 865 RF transistor Text: MRF247 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF247 is Designed for 12.5 V VHF large signal amplifier applications up to 175 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x Ø N • Internal Input Matching Network • PG = 7.0 dB at 75 W/175 MHz	Original	MRF247 MRF247 amplifier mrf247 865 RF transistor	PDF

AVF250 Abstract: ASI10571 Text: AVF250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG DESCRIPTION: A .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B The ASI AVF250 is a high power ClassC transistor designed for IFF/BME/TACAN applications in 1025-1150 MHz range. ØD C E F G H FEATURES:	Original	AVF250 AVF250 ASI10571	PDF
TVV030 Abstract: ASI10660 Text: TVV030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x Ø N • Common Emitter • PG = 6.0 dB at 30 W/225 MHz • Omnigold Metalization System	Original	TVV030 TVV030 ASI10660	PDF
D 400 F 6 F BIPOLAR TRANSISTOR Abstract: 41000W TACAN ASI10574 AVF400 Text: AVF400 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2NL FLG The ASI AVF400 is a NPN bipolar power transistor designed for high peak power applications such as DME/TACAN/IFF. In 1025-1150 MHz band. A .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B	Original	AVF400 AVF400 ASI10574 D 400 F 6 F BIPOLAR TRANSISTOR 41000W TACAN ASI10574	PDF
Untitled Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N–P–N transisto r Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration	Original	OT-23 CMBT4401 C-120	PDF
TVV014A Abstract: ASI10658 Text: TVV014A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV014A is designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN FU LL R • Common Emitter • PG = 14 dB at 14 W/225 MHz • Omnigold Metalization System	Original	TVV014A TVV014A ASI10658	PDF
AVF300 Abstract: ASI10572 Text: AVF300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2NL FLG The ASI AVF300 is a high power Class C transistor, Designed for IFF/DME/TACAN Applications in 960-1215 MHz. A .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B ØD C E F FEATURES: G • Internal Input/Output Matching Networks	Original	AVF300 AVF300 ASI10572	PDF
AVD350 Abstract: ASI10566 k1450 Text: AVD350 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2NL FLG The ASI AVD350 is high power Class C transistor, designed for avionics applications in 960-1215 MHz A .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B ØD C E F FEATURES: G H • Internal Input/Output Matching Networks	Original	AVD350 AVD350 ASI10566 k1450	PDF
CMBT4401 Abstract: No abstract text available Text: CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N -P -N transistor M arking CMBT4401 = 2X PA C K A G E O U T L IN E D ETA ILS A LL D IM EN SIO N S IN m m _3.0_ 2.8 0 .1 4 0.48 0.38 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.4 _K°2_ 0.89 2.00	OCR Scan	CMBT4401 CMBT4401	PDF
ASI10657 Abstract: TVV014 Text: TVV014 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV014 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C 2x ØN FU LL R FEATURES: D • Common Emitter • PG = 14 dB at 14 W/225 MHz • Omnigold Metalization System	Original	TVV014 TVV014 ASI10657	PDF
MRF316 Abstract: No abstract text available Text: MRF316 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF316 is Designed for Class C Power Amplifier Applications up to 200 MHz. PACKAGE STYLE .500 6L FLG FEATURES: C A E C E 2x ØN FU LL R • PG = 10 dB min. at 80 W/ 150 MHz • Withstands 30:1 Load VSWR	Original	MRF316 MRF316 ASI10771	PDF

TRANSISTOR 2X W Search Results

TRANSISTOR 2X W Result Highlights (5)

TRANSISTOR 2X W Datasheets Context Search

LMBT4401LT1G

Untitled

Untitled

TBA950

2X transistor sot 353

Untitled

MMBT4401

SMD transistor 2x sot 23

BLV25

ASI10531

BLV25

sd1441

2SC2782

MRF247

AVF250

TVV030

D 400 F 6 F BIPOLAR TRANSISTOR

Untitled

TVV014A

AVF300

AVD350

CMBT4401

ASI10657

MRF316