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    TRANSISTOR 2TD Search Results

    TRANSISTOR 2TD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2TD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    t01 transistor

    Abstract: STD03N SANKEN AUDIO sanken transistor TRANSISTOR sanken catalog std03 STD03P darlington transistor for audio power application 8DARLINGTON sanken power transistor
    Text: Darlington Transistor with built-in compensation diodes STD03P March, 2006 •Package -MT-105 TO3P 5-pin ■Features ● High collector power dissipation: Pc=160W (with TO-3P) ● Low internal impedance by means of thinner die structure ● Built-in temperature compensation diode


    Original     		PDF STD03P ---MT-105 STD03N T01-002EA-060309 t01 transistor STD03N SANKEN AUDIO sanken transistor TRANSISTOR sanken catalog std03 STD03P darlington transistor for audio power application 8DARLINGTON sanken power transistor

    RF marking code P2T

    Abstract: cen 2N5401 330MF100V
    Text: LTC4261 Negative Voltage Hot Swap Controller with ADC and I2C Monitoring U FEATURES DESCRIPTIO • The LTC 4261 negative voltage Hot SwapTM controller allows a board to be safely inserted and removed from a live backplane. Using an external N-channel pass transistor,


    Original     		PDF LTC4261 10-Bit 28-Lead 24-Lead LTC4252-1/LTC4252-2 LTC4252A-1/LTC4252A-2 LTC4253 LTC4260 LTC4354 LTC4261CGN RF marking code P2T cen 2N5401 330MF100V

    cx 2606

    Abstract: 4261F IRF1310NS LTC4261 LTC4261CGN LTC4261IGN R7B Connector 330MF100V
    Text: LTC4261 Negative Voltage Hot Swap Controller with ADC and I2C Monitoring U FEATURES DESCRIPTIO • The LTC 4261 negative voltage Hot SwapTM controller allows a board to be safely inserted and removed from a live backplane. Using an external N-channel pass transistor,


    Original     		PDF LTC4261 10-Bit IndC4252-1/LTC4252-2 LTC4252A-1/LTC4252A-2 LTC4252A) LTC4253 LTC4260 LTC4354 4261f cx 2606 4261F IRF1310NS LTC4261 LTC4261CGN LTC4261IGN R7B Connector 330MF100V

    TRANSISTOR sanken catalog

    Abstract: SANKEN POWER TRANSISTOR t01 transistor SANKEN AUDIO STD03N STD03P T01001 B105 sanken transistor "Sanken Rectifiers"
    Text: Darlington Transistor with built-in compensation diodes STD03N March, 2006 •Package- MT-105 TO3P 5-pin ■Features ● High collector power dissipation: Pc=160W (with TO-3P) ● Low internal impedance by means of thinner die structure ● Built-in temperature compensation diode


    Original     		PDF STD03N MT-105 STD03P 10that T01-001EA-060309 TRANSISTOR sanken catalog SANKEN POWER TRANSISTOR t01 transistor SANKEN AUDIO STD03N STD03P T01001 B105 sanken transistor "Sanken Rectifiers"

    68HC12

    Abstract: 68HC16 AN1837 M68HC08 M68HC12 motorola embedded flash 1990
    Text: MOTOROLA Order this document by AN1837/D SEMICONDUCTOR APPLICATION NOTE Non-Volatile Technology Memory Overview By Stephen Ledford Order this document by AN1837/D Motorola Semiconductor Application Note AN1837 Non-Volatile Memory Technology Overview By Stephen Ledford


    Original     		PDF AN1837/D AN1837 68HC12 68HC16 AN1837 M68HC08 M68HC12 motorola embedded flash 1990

    motorola transistor cross reference

    Abstract: 68HC12 68HC16 AN1837 M68HC08 M68HC12 FLASH CROSS motorola application note
    Text: Order this document by AN1837/D Motorola Semiconductor Application Note AN1837 Non-Volatile Memory Technology Overview By Stephen Ledford Non-Volatile Memory Technology Center Austin, Texas Introduction Today’s microcontroller applications are more sophisticated with


    Original     		PDF AN1837/D AN1837 motorola transistor cross reference 68HC12 68HC16 AN1837 M68HC08 M68HC12 FLASH CROSS motorola application note

    68HC12

    Abstract: 68HC16 AN1837 M68HC08 M68HC12 FLASH CROSS motorola transistor cross reference
    Text: Freescale Semiconductor, Inc. Order this document by AN1837/D Motorola Semiconductor Application Note Freescale Semiconductor, Inc. AN1837 Non-Volatile Memory Technology Overview By Stephen Ledford Non-Volatile Memory Technology Center Austin, Texas Introduction


    Original     		PDF AN1837/D AN1837 68HC12 68HC16 AN1837 M68HC08 M68HC12 FLASH CROSS motorola transistor cross reference

    em 234 stepper

    Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
    Text: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility


    Original     		PDF O01ED0 H1-O01ED0-0106030ND em 234 stepper 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090

    disadvantages 68hc12

    Abstract: 68HC3xx flash "high temperature data retention" mechanism 68HC12 68HC16 AN1837 M68HC08 M68HC12
    Text: Freescale Semiconductor Order this document by AN1837/D Freescale Semiconductor, Inc. AN1837 Non-Volatile Memory Technology Overview By Stephen Ledford Non-Volatile Memory Technology Center Austin, Texas Introduction Today’s microcontroller applications are more sophisticated with


    Original     		PDF AN1837/D AN1837 disadvantages 68hc12 68HC3xx flash "high temperature data retention" mechanism 68HC12 68HC16 AN1837 M68HC08 M68HC12

    triac zd 607

    Abstract: transistor C5586 bridge rectifier sanken rb40 rb40 bridge rectifier rb60 bridge rectifier ZD 607 - triac CTPG2F CTX12S Toshiba transistor c4468 STA524A
    Text: Warning ● The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest version of the document before use. ● The operation and circuit examples in this document are provided for reference purposes


    Original     		PDF The32-246622 H1-O03EA0-0510020NM triac zd 607 transistor C5586 bridge rectifier sanken rb40 rb40 bridge rectifier rb60 bridge rectifier ZD 607 - triac CTPG2F CTX12S Toshiba transistor c4468 STA524A

    NPN Transistor BC548B

    Abstract: BC548 BC238B npn bc337-40 npn transistor
    Text: ALLEGRO MICROSYSTEMS INC 14 D • 0504330 00047^4 3 ■ ALGR T~^9-0| SPRAGUE PROELECTRON T092J TRANSISTOR TYPES»! PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA BC212LB


    OCR Scan     		PDF T092J BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB NPN Transistor BC548B BC548 BC238B npn bc337-40 npn transistor

    NPN Transistor BC548B

    Abstract: transistor bc238b TP2369A t092 transistor pro-electron BCS48
    Text: SPRAGUE/SEMICOND GROUP 14E D • T -U 'O I ÖS13ÖS0 □ □□ 47ei4 4 ■ SPRAGUE PROELECTRON T092 TRANSISTOR TYPES» PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA


    OCR Scan     		PDF BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA NPN Transistor BC548B transistor bc238b TP2369A t092 transistor pro-electron BCS48

    HN3C17F

    Abstract: TOSHIBA IC 2803 E33 marking
    Text: TOSHIBA TENTATIVE HN3C17F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C 17F VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Including Two Devices in SM6 (Super Mini Type with 6 Leads) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF HN3C17F 16GHz HN3C17F TOSHIBA IC 2803 E33 marking

    bh6620k

    Abstract: Fdd spindle motor circuit 300 BA1300 ba6476 BA6487AFP-Y ba6479afp-y BA6600 FDD STEPPER MOTOR BA658 fdd spindle controller
    Text: I, 1 FDD Block Diagram of Typical Applications PHOTO INTERRUfTER Single-chip FDD a- ailable in full-custom design Read/write ampliiier BA6600 Series Side "O' Side “1" I FDD controller S2PCS Series PHOTO REFLECTOR I Motor driver Transistor array BA6470/ 80


    OCR Scan     		PDF BA6600 BA12000 BA13000 QFP44 QFP32 QFP32 bh6620k Fdd spindle motor circuit 300 BA1300 ba6476 BA6487AFP-Y ba6479afp-y FDD STEPPER MOTOR BA658 fdd spindle controller

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN 1070C 2SC3151 NO.1070C NPN Triple Diffused Planar Silicon Transistor SAÊYO i 800V/1.5A Switching Regulator Applications Features . High breakdown voltage Vç b o -9°0v . High switching speed . Wide ÂSO Absolute Maximum Ratings a t Ta=25°c


    OCR Scan     		PDF 1070C 2SC3151 00V/1 PWS300jis, 5097KI/4193KI D020Dbl 2TD0E00 0020GL3

    bkd transistor

    Abstract: Zener diode 1N4146 1n4146 zener NPN transistor 310 Dba sot23
    Text: SPRAGUE/SEMICO ND GROUP IME D • 0513050 0QG47TQ 7 ■ T-^-öl SOT23 TRANSISTOR TYPES Type No. BC807-16 BC807-2S BC807-40 BC817-16 BC817-25 BC817-40 BC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C BC849B BC849C BC850B BC850C BC856A BC8S6B BC857A BC857B


    OCR Scan     		PDF 0QG47TQ BC807-16 BC807-2S BC807-40 BC817-16 BC817-25 BC817-40 BC846A BC846B BC847A bkd transistor Zener diode 1N4146 1n4146 zener NPN transistor 310 Dba sot23

    RZB06050W

    Abstract: transistor B42 Transistor 2TD 476 capacitor 100B102KP50X capacitor 476
    Text: P h ilip s S e m icon d u ctors Prelim inary sp ecification NPN silicon planar epitaxial „ m ic rowave power transistor PHILIPS INTERNATIONAL FEATURES Suitable for short and medium pulse applications up to 1 ms/10% Internal input prematching networks allow an easier design


    OCR Scan     		PDF RZB06050W FO-57C 711Dfi2fci T-33-09 RZB06050W transistor B42 Transistor 2TD 476 capacitor 100B102KP50X capacitor 476

    BFG403W

    Abstract: No abstract text available
    Text: DISC RETE S E M IC O N D U C TO R S M EUT BFG403W NPN 17 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors


    OCR Scan     		PDF BFG403W 125104/00/04/pp12 BFG403W

    ba6489fs

    Abstract: BA6479AFP-Y BA6608K BA6489 BA6608 1450 transistor ba6485 BA6845 BA6491FS Fdd spindle motor circuit 300
    Text: ranrn ICs for Industrial Equipment FDD Block Diagram of Typical Applications « Single-chip FD D available in tuli-custom design Read/write amplifier Side BA M O O S e rte Side Motor driver Transistor array c= => f FDO controller S2PCS Series SA6470/ 80 $9 0 9 »


    OCR Scan     		PDF SA6470/ BA6569K BA6600K BA6607K BA6608K BA6610AK BA6612K VBH6620K BA12000 BA13000 ba6489fs BA6479AFP-Y BA6489 BA6608 1450 transistor ba6485 BA6845 BA6491FS Fdd spindle motor circuit 300

    204AA

    Abstract: No abstract text available
    Text: SEHELAB PLC bOE D • 0133107 □□□QficJ4 354 ■ S M L B MOS POWER IGBT M il SEM E SML25G100AN LAB 1000V 4 25A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol ^CES All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF SML25G100AN SML25G100AN 204AA

    2SK48

    Abstract: transistor 2sk 100-C
    Text: SILICON N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR I ff I i ffl TENTATIVE INDUSTRIAL APPLICATIONS c m u l m . -ù -m tn o o Medi c a l Elec t r o n i c Equi p m e n t • ¡SfiiüíT-í- ; _ Unit in mm '052MAX. NF = &5CLB Typ. R g = 100kí3


    OCR Scan     		PDF 100ki) 120Hz CHARACTERISTIC120 ID-450/iA Ta-251C 2SK48 transistor 2sk 100-C

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA H N 3 C 1 1 FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 C 1 1 FU Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C11 N3C11

    CA3140S

    Abstract: Transistor Equivalent TT 2142 Harris CA3140AE diagram transistor tt 2140 CA3140 CA3140E Transistor TT 2140 PIN DIAGRAM OF IC CA3140 CA3130 peak detector CA3140AE
    Text: HARRIS SEPIICOND SECTOR blE D • 4302271 □D4bE‘lS 2TD H H A S HARRIS SEMICONDUCTOR CA3140 M ■ m W BiMOS Operational Amplifier with MOSFET Input/Bipolar Output April 1993 Features Description MOSFET Input Stage - Vary High Input Impedance Z,N -1.5TQ (Typ.)


    OCR Scan     		PDF CA3140 200ns/Dlv 50mV/Div 200ns/Div 50mWDh/ 200ns/Div 140kHz, Tektronix7A13 RGURE35. CA3140S Transistor Equivalent TT 2142 Harris CA3140AE diagram transistor tt 2140 CA3140 CA3140E Transistor TT 2140 PIN DIAGRAM OF IC CA3140 CA3130 peak detector CA3140AE

    T0219

    Abstract: "step recovery diode" 1.7 pf D4P03
    Text: MOTOROLA Order this document by MMDF4P03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F4P 03H D Medium Power Surface Mount Products M otorola Preferred Device TMOS Dual P-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 30 VOLTS RDS on = 85 mil


    OCR Scan     		PDF MMDF4P03HD/D b3b72S4 T0219 "step recovery diode" 1.7 pf D4P03