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    TRANSISTOR 2SK152 Search Results

    TRANSISTOR 2SK152 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SK152 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 PDF

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545 PDF

    K1529

    Abstract: 2SK1529 2SJ200 Toshiba 2SJ
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)


    Original     		2SK1529 2SJ200 K1529 K1529 2SK1529 2SJ200 Toshiba 2SJ PDF

    K1529

    Abstract: 2sk1529 2sj200 2SJ200 2SK1529 Toshiba 2SJ
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)


    Original     		2SK1529 2SJ200 K1529 K1529 2sk1529 2sj200 2SJ200 2SK1529 Toshiba 2SJ PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Tc = 25°C)


    Original     		2SK1529 2SJ200 2-16C1B K1529 PDF

    2SJ200

    Abstract: 2SJ20
    Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SK1529 Maximum Ratings (Ta = 25°C)


    Original     		2SJ200 2SK1529 2-16C1B 2SJ200 2SJ20 PDF

    2SJ200

    Abstract: 2sk1529/2sj200
    Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SK1529 Maximum Ratings (Tc = 25°C)


    Original     		2SJ200 2SK1529 2-16C1B 2SJ200 2sk1529/2sj200 PDF

    2SK1529

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1529 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 529 HIGH POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : Vj3gg = 180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ.


    OCR Scan     		2SK1529 2SJ200 2SK1529 PDF

    c 111 transistor

    Abstract: No abstract text available
    Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1529 SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 15.9MAX . High Breakdown Voltage 03.2±O.2 : Vj ss“180V MIN.) 7 . High Forward Transfer Admittance : | Yfs | “4.OS (TYP.) . Complementary to 2SJ200


    OCR Scan     		2SK1529 2SJ200 Ta-25 Tcm25 SC-65 2-16C1B c 111 transistor PDF

    2SJ200

    Abstract: 6C1B
    Text: I 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage X5.9MAX 03.2 ±0.2 : V jjss “"180V MIN. . High Forward Transfer Admittance : | Yfs | “4.OS (TYP.) r . . Complementary to 2SK1529


    OCR Scan     		2SJ200 2SK1529 2SJ200 6C1B PDF

    K1529

    Abstract: 2SJ200 2SK1529 Toshiba 2SJ 2sk1529 2sj200
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 180V l High forward transfer admittance : |Yfs| = 4.0 S typ. l Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)


    Original     		2SK1529 2SJ200 K1529 K1529 2SJ200 2SK1529 Toshiba 2SJ 2sk1529 2sj200 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1529 Field Effect Transistor Silicon N Channel MOSType ji-MOS II High Power Amplifier Application F e a tu re s • High Breakdown Voltage - VDSS = 180V (Min.) • High Forward Transfer Admittance - |Yfe I = 4.0S (Typ.)


    OCR Scan     		2SK1529 2SJ200 PDF

    2SJ200

    Abstract: 2SK1529
    Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SJ200 2SK1529 2-16C1B 2SJ200 2SK1529 PDF

    2sj200

    Abstract: 2SK1529 Toshiba 2SJ
    Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = −180 V l High forward transfer admittance : |Yfs| = 4.0 S typ. l Complementary to 2SK1529 Maximum Ratings (Ta = 25°C)


    Original     		2SJ200 2SK1529 2-16C1B 2sj200 2SK1529 Toshiba 2SJ PDF

    2SK1529

    Abstract: K1529 2SJ200
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SK1529 2SJ200 2SK1529 K1529 2SJ200 PDF

    2SK1529

    Abstract: Toshiba 2SJ
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SK1529 2SJ200 2SK1529 Toshiba 2SJ PDF

    2SK1529

    Abstract: 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SK1529 2SJ200 2SK1529 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b PDF

    k1529

    Abstract: 2SJ200 2SK1529 toshiba pb includes toshiba 2-16c1b
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SK1529 2SJ200 k1529 2SJ200 2SK1529 toshiba pb includes toshiba 2-16c1b PDF

    2SJ200

    Abstract: 2sk1529 2sj200 Toshiba 2SJ
    Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SJ200 2SK1529 2-16C1B 2SJ200 2sk1529 2sj200 Toshiba 2SJ PDF

    2SK1529

    Abstract: toshiba 2Sj200
    Text: TOSHIBA 2SK1529 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 529 HIGH PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : Vj gg= 180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ.)


    OCR Scan     		2SK1529 2SJ200 2SK1529 toshiba 2Sj200 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SJ200 Field Effect Transistor Silicon P Channel MOS Type rc-MOS II Audio Frequency Power Amplifier Application Features • High Breakdown Voltage - VDSS = -180V (Min.) • High Forward Transfer Admittance - Y fs ' = 4 . O S (T y p .) • Complementary to 2SK1529


    OCR Scan     		2SJ200 -180V 2SK1529 PDF

    2SK1529

    Abstract: No abstract text available
    Text: TO SHIBA 2SK1529 Field Effect Transistor Unit in m m 15.9 MAX Silicon N Channel MOS Type rc-MOS II # 3 .2 ±0.2 High Power Amplifier Application Features • High Breakdown Voltage - VDSS = 180V (Min.) • High Forward Transfer Adm ittance - "Yfs = 4.OS (Typ.)


    OCR Scan     		2SK1529 2SJ200 SC-65 2SK1529 PDF

    toshiba j200

    Abstract: No abstract text available
    Text: T O SH IB A 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 SJ 2QQ Unit in mm HIGH POWER AMPLIFIER APPLICATION 1 5.9 MAX. High Breakdown Voltage : V j}ss= —180V High Forward Transfer Admittance : |Yfg| = 4.0S Typ. Complementary to 2SK1529


    OCR Scan     		2SJ200 toshiba j200 PDF

    TRANSISTOR bH-10

    Abstract: marking BH-10 2SJ200 2SK1529 SC-65
    Text: TO S H IB A 2SJ200 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH POWER AMPLIFIER APPLICATION U nit in mm 1 5 .9 M A X . • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs|= 4 .0 S Typ. • Complementary to 2SK1529


    OCR Scan     		2SJ200 2SK1529 SC-65 2-16C1B TRANSISTOR bH-10 marking BH-10 PDF