Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 2SK1112 Search Results

    TRANSISTOR 2SK1112 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SK1112 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MG150Q1JS44

    Abstract: 1S1885 diode MG150Q1JS
    Text: MG150Q1JS44 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q1JS44 Unit in mm High Power Switching Applications Chopper Applications • High input impedance · High speed: tf = 0.4µs max. · Low saturation voltage · Enhancement−mode · The electrodes are isolated from case.


    Original     		MG150Q1JS44 2-109C1A MG150Q1JS44 1S1885 diode MG150Q1JS PDF

    2SK1112

    Abstract: S2-5V relay transistor 2sk1112
    Text: TOSHIBA Discrete Semiconductors 2SK1112 Field Effect Transistor Silicon N Channel MOSType L2-t>MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Fe a tu re s • 4-Volt Gate Drive • Low Drain-Source ON Resistance


    OCR Scan     		2SK1112 20kii) S2-5V relay transistor 2sk1112 PDF

    L5A relay

    Abstract: 2SK1112
    Text: 2SK1112 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7T-MOSm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Unit in mm 6.8MAX FEATURES : • 4-Volt Gate Drive • Low Drain-Source ON Resistance


    OCR Scan     		2SK1112 20kfl) L5A relay 2SK1112 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1112 Field Effect Transistor Silicon N Channel MOSType L2-jt-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance • R DS(ON) = 0.12£2 (Typ.)


    OCR Scan     		2SK1112 PDF

    2SK1112

    Abstract: transistor 2sk1112
    Text: TOSHIBA 2SK1112 Field Effect Transistor Silicon N Channel MOS Type L2-rc-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance " R ds (ON) = 0 .1 2£2 (Typ.)


    OCR Scan     		2SK1112 2SK1112 transistor 2sk1112 PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    HC 8436

    Abstract: marcon capacitor ce marcon CE capacitor seiko hc 1000 transistor lr 3303 CACFM D1NS4 diode transistor 2sC3279 S-8435 equivalent tr 2SC3279 equivalent
    Text: STEP-UP SWITCHING REGULATOR S -8 4 3 5 /8 4 3 6 Series The S-8435/8436 Series is a CMOS step-up sw itching regulator that consists of a reference voltage source, a CR oscillation circuit, a pow er MOS FET, a diode, and a com parator. T he output voltage is


    OCR Scan     		S-8435/8436 S-8435 S-8436 RCH654 2SK1112* RCH855 2SK1112. HC 8436 marcon capacitor ce marcon CE capacitor seiko hc 1000 transistor lr 3303 CACFM D1NS4 diode transistor 2sC3279 S-8435 equivalent tr 2SC3279 equivalent PDF

    Marcon capacitor Co

    Abstract: CACFM D1N54 2SC3279 equivalent 2SK1112 CACFM 1A220M Marcon 2SC3279 41178 8436
    Text: Contents Features . 1 Applications. 1 Block d ia g ra m . 1 Pin A s s ig n m e n t. ; .


    OCR Scan     		RCH855 47//H) 2SK1112* /50mA 2SK1112. Marcon capacitor Co CACFM D1N54 2SC3279 equivalent 2SK1112 CACFM 1A220M Marcon 2SC3279 41178 8436 PDF

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497 PDF