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    TRANSISTOR 2SC337 Search Results

    TRANSISTOR 2SC337 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SC337 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 2sc124

    Abstract: transistor 9014 NPN equivalent of transistor 9014 NPN 2sC103 transistor Transistor BC 548 transistor bc 547 BC 9014 2SC124 9014 Transistor BC 547 transistor
    Text: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table NPN Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SC15-0 HN / BC 548 / 9014 2SC166 HN / BC 548 / 9014 2SC376 HN / BC 546 / 9014 2SC15-1 HN / BC 546 / 9014


    Original     		PDF To-92 2SC15-0 2SC166 2SC376 2SC15-1 2SC167 2SC400 2SC16 2SC182 2SC401 transistor 2sc124 transistor 9014 NPN equivalent of transistor 9014 NPN 2sC103 transistor Transistor BC 548 transistor bc 547 BC 9014 2SC124 9014 Transistor BC 547 transistor

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


    Original     		PDF BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a

    transistor 2N3563

    Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
    Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3379 NPN EPITAXIAL PLANAR TY P E DESCRIPTION OUTLINE DRAWING Dim ensions in mm 2SC3379 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF power amplifier applications. FEATURES • High power gain: G p eè6.7dB


    OCR Scan     		PDF 2SC3379 2SC3379 520MHz,

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346

    2SC337

    Abstract: 2SC3376
    Text: TOSHIBA 2SC3376 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3376 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED DC-DC CONVERTER APPLICATIONS. • 15.9MAX. S¿3.2±0.2 Excellent Switching Times l£ = 0.8A


    OCR Scan     		PDF 2SC3376 2SC337 2SC3376

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3376 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3376 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS. • • Excellent Switching Times l0 = O.8A : tr =1.0^8 (Max.), tf=1.0/^s (Max.)


    OCR Scan     		PDF 2SC3376

    2SC3376

    Abstract: No abstract text available
    Text: TO SH IBA 2SC3376 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3376 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED DC-DC CONVERTER APPLICATIONS. 3.2 ±0.2 15.9MAX • Excellent Switching Times Iç; = 0.8A


    OCR Scan     		PDF 2SC3376 2SC3376

    2sc3376

    Abstract: 2SC337
    Text: TO SH IBA 2SC3376 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3376 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED DC-DC CONVERTER APPLICATIONS. 3.2 ± 0 .2 15.9MAX • Excellent Switching Times Iç; = 0.8A


    OCR Scan     		PDF 2SC3376 2sc3376 2SC337

    2SC337

    Abstract: 2sc3376
    Text: TOSHIBA 2SC3376 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3376 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. IN D U S T R IA L A P P L IC A T IO N S HIGH SPEED DC-DC CONVERTER APPLICATIONS. • Ex cellen t Sw itch ing Tim es Ic = 0.8A


    OCR Scan     		PDF 2SC3376 2SC337 2sc3376

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    2SC3377

    Abstract: 2SC337
    Text: 2SC3377 h -7 > y X £ / T ransistors S C 3 3 7 7 2 b-7 > v * $ Epitaxial Planar NPN Silicon Transistor /Medium Power Amp. • W f ^ ä a / D i m e n s i o n s Unit : mm 1) V c E ( s a t ) * 'i 6 '''o VcE(sat)= 0,15V (Typ.) (lc /lB = 5 0 0 m A /5 0 m A )


    OCR Scan     		PDF 2SC3377 500mA/50mA) 100ms 2SC3377 2SC337

    C2021M

    Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
    Text: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)


    OCR Scan     		PDF 2SC2021LJNE) 2SB821 2SA937ALN \2SC2021LN 2SB1276 2021M 2SA937AM 2SB737 2SD786 2SA1137 C2021M B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240

    Untitled

    Abstract: No abstract text available
    Text: h v X ^ /T ra n s is to rs ROHM CO LTD MOE D • 2SC3377 ’T a S f l n i 'D D D S 7 b ej’ T B R H M JU7°I s - i - B NPN y U = l > h - 7 > V ^ ^ /Medium Power Amp. 1 ^ -2 7 -¡3 Epitaxial Planar NPN Silicon Transistor J iH / D im e n sio n s U n it: mm


    OCR Scan     		PDF 2SC3377

    2sc337

    Abstract: No abstract text available
    Text: 2SC3377 S ~p > V Z $ /Transistors 2SC3377 '7;1/70u~^npn 4, ^ i H llliffl/M e d iu m Power Amp. Epitaxial Planar NPN Silicon Transistor • ^ J f iv f j iH / D im e n s io n s U n it : mm 1W • 1) V C 6 (Sat) = 1 5 0 m V T y p . (at 5 0 0 m A ) t • F e atu re


    OCR Scan     		PDF 2SC3377 2sc337

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2SC3378

    Abstract: fet 2sK161 2SA1048 2SA1049 2SA1150 2SA1297 2SC2458 2SC2469 2SC2710 2SK184
    Text: L. —3 O n X H CD 2. MINI PACKAGE SERIES > rH H H n 73 m —3 m \ o "O > TRANSISTOR < PC PNP V (mA) (mW) : 2SA1048 50 150 200 70—700/400 2SC2458(l ^2SA1048( l ) 50 150 200 High Voltage 2SC2469 ' 2SA1049 120 100 High Current 2SC2710 Ì2SA1150 30 800 High Current


    OCR Scan     		PDF 2SC2458 2SA1048 2SC24S8 2SC2469 2SA1049 2SC2710 2SA1150 2SK367 2SK370 2SC3378 fet 2sK161 2SA1297 2SC2458 2SC2469 2SC2710 2SK184

    2sc337

    Abstract: 2SC3377 NPN transistor SST 117
    Text: 2 S C 3 3 7 7 Xlf^v^7“u-^NPN /Medium Power Amp. ~ 2 7 -J3 Epitaxial Planar NPN Silicon Transistor • # ‘^& |Sl/'D lm ensions Unit : mm 1) VcE(sat)=150mV Typ. (at 500mA) h t •5 V X * • Feature 1) Low collector saturation voltage: V cE(Sa.)=150m V (at 500mA)


    OCR Scan     		PDF 2SC3377 150mV 500mA) 2sc337 NPN transistor SST 117

    2SC3378

    Abstract: 25A1048
    Text: —3 O IA un H CO 3» 2. MINI PACKAGE SERIES rS fc > TRANSISTOR Application NPN PNP 2SC2458 General Purpose’* v CE sat) MAX. hFE Type No. I2SA1048 VCEO •c (V) M l PC ImW) VCE ic IV )' ‘ M ) (V) fjT Y P (MIN.) ■c 1 >B ImA) ImA) VCE (MHz), (V) O C/>


    OCR Scan     		PDF 2SC2458 I2SA1048 2SK365 2SK367 2SK370 2SK371 2SK372 2SC3378 25A1048

    Mosfet FTR 03-E

    Abstract: mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337
    Text: h 7 > y ^ £ / T ra n sisto rs h 7 > v * £ IÜ á q — J W / T r a n s is t o r s S u m m a ry • POWER MOSFET Application Part No 2SK1976 V dss V 2SK2176 Package Typ (Q ) V gs (V) Page Id (A) 450 5 30 1.0 10 2.5 TO-220FP 88 60 10 30 0 08 10 5 TO-220FP


    OCR Scan     		PDF 2SK1976 2SK2095 2SK2176 O-220FP 2SA785 2SA790 2SA790M 2SA806 Mosfet FTR 03-E mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497