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    TRANSISTOR 2SC2655 Search Results

    TRANSISTOR 2SC2655 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SC2655 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j PDF

    2sc2655

    Abstract: 2SC2655 NPN Transistor equivalent 2SC2655
    Text: ST 2SC2655 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2SC2655 O-92L 2sc2655 2SC2655 NPN Transistor equivalent 2SC2655 PDF

    2SC2655L

    Abstract: No abstract text available
    Text: ST 2SC2655L NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2SC2655L O-92L 2SC2655L PDF

    2sc2655

    Abstract: equivalent 2SC2655 transistor 2SC2655
    Text: ST 2SC2655 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2SC2655 O-92L 2sc2655 equivalent 2SC2655 transistor 2SC2655 PDF

    2SC2655L

    Abstract: 2SC2655
    Text: ST 2SC2655L NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2SC2655L O-92L 2SC2655L 2SC2655 PDF

    equivalent 2SC2655

    Abstract: transistor 2SC2655 2sc2655 2SC2655 NPN Transistor 2002 TO92
    Text: ST 2SC2655 TO-92 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2SC2655 equivalent 2SC2655 transistor 2SC2655 2sc2655 2SC2655 NPN Transistor 2002 TO92 PDF

    transistor 2SC2655

    Abstract: 2sc2655 equivalent 2SC2655 2SC2655 NPN Transistor ST2SC2655 1.5A NPN power transistor TO-92
    Text: ST 2SC2655 TO-92 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2SC2655 transistor 2SC2655 2sc2655 equivalent 2SC2655 2SC2655 NPN Transistor ST2SC2655 1.5A NPN power transistor TO-92 PDF

    equivalent 2SC2655

    Abstract: 2sc2655 1.5A NPN power transistor TO-92 transistor 2SC2655
    Text: ST 2SC2655 TO-92 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2SC2655 equivalent 2SC2655 2sc2655 1.5A NPN power transistor TO-92 transistor 2SC2655 PDF

    2SA1020L UTC

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC=-1A)


    Original     		2SA1020 2SA1020 2SC2655 2SA1020L-x-AE3-R 2SA1020G-x-AE3-R 2SA1020L-x-AB3-R 2SA1020G-x-AB3-R 2SA1020L-x-T9N-B 2SA1020G-x-T9N-B 2SA1020L-x-T9N-K 2SA1020L UTC PDF

    2sa1020

    Abstract: 2SA1020L 2SA1020L UTC 2sc2655 sot-23 2sc2655 SOT89 transistor 2SA1020 2SA1020G
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. „ FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC=-1A)


    Original     		2SA1020 2SA1020 2SC2655 2SA1020L-x-AE3-R 2SA1020L-x-AB3-R 2SA1020L-x-T9N-B 2SA1020L-x-T9N-K 2SA1020G-x-AE3-R OT-23 2SA1020G-x-AB3-R 2SA1020L 2SA1020L UTC 2sc2655 sot-23 2sc2655 SOT89 transistor 2SA1020 2SA1020G PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC=-1A)


    Original     		2SA1020 2SA1020 2SC2655 2SA1020L-x-AE3-R 2SA1020G-x-AE3-R 2SA1020L-x-AB3-R 2SA1020G-x-AB3-R 2SA1020L-x-T9N-B 2SA1020G-x-T9N-B 2SA1020L-x-T9N-K PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC= -1A)


    Original     		2SA1020 2SA1020 2SC2655 2SA1020G-x-AE3-R 2SA1020G-x-AB3-R 2SA1020L-x-T9N-B 2SA1020G-x-T9N-B 2SA1020L-x-T9N-K 2SA1020G-x-T9N-K OT-23 PDF

    2SA1020

    Abstract: 2SC2655 2sc2655 SOT
    Text: UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and 1 power switching applications. FEATURES *Low collector saturation voltage: VCE sat =-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0µs(Typ.)


    Original     		2SA1020 2SA1020 2SC2655 OT-89 250mm2 QW-R208-021 2SC2655 2sc2655 SOT PDF

    equivalent 2SC2655

    Abstract: 2SA1020 2SC2655 2sc2655 SOT89 2sc2655 SOT HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A
    Text: UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and 1 power switching applications. FEATURES *Low collector saturation voltage: VCE sat =-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0µs(Typ.)


    Original     		2SA1020 2SA1020 2SC2655 OT-89 250mm2 250mm2 QW-R208-021 equivalent 2SC2655 2SC2655 2sc2655 SOT89 2sc2655 SOT HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A PDF

    2SA1020

    Abstract: HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A pnp transistor 2sa1020 50V 1A PNP power transistor transistor pnp 1a
    Text: UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. FEATURES 1 *Low collector saturation voltage: VCE sat =-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0µs(Typ.)


    Original     		2SA1020 2SA1020 2SC2655 O-92NL QW-R211-007 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A pnp transistor 2sa1020 50V 1A PNP power transistor transistor pnp 1a PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS  FEATURES * Low saturation voltage: VCE SAT = 0.5V (Max.) * High speed switching time: TSTG=1.0 s (Typ.)  ORDERING INFORMATION Ordering Number


    Original     		2SC2655 2SC2655Gx-AE3-R 2SC2655L-x-T9N-B 2SC2655Gx-T9N-B 2SC2655L-x-T9N-K 2SC2655Gx-T9N-K 2SC2655L-x-T9N-R 2SC2655Gx-T9N-R OT-23 O-92NL PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS „ FEATURES * Low saturation voltage: VCE SAT = 0.5V (Max.) * High speed switching time: TSTG=1.0 s (Typ.) „ ORDERING INFORMATION Ordering Number


    Original     		2SC2655 2SC2655L-x-AE3-R 2SC2655L-x-T9N-B 2SC2655L-x-T9N-K 2SC2655L-x-T9N-R 2SC2655Gx-AE3-R 2SC2655Gx-T9N-B 2SC2655Gx-T9N-K 2SC2655Gx-T9N-R OT-23 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346 PDF

    2sc2655

    Abstract: 2SC2655G transistor 2SC2655 equivalent 2SC2655 2SC2655L 2SC2655L-x-AE3-R QW-R211-013 2SC2655 NPN Transistor 2SC2655-G
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS „ FEATURES * Low saturation voltage: VCE SAT = 0.5V (Max.) * High speed switching time: tstg=1.0 s (Typ.) Lead-free: 2SC2655L Halogen-free: 2SC2655G


    Original     		2SC2655 2SC2655L 2SC2655G 2SC2655-x-AE3-R 2SC2655L-x-AE3-R 2SC2655Gx-AE3-R 2SC2655-x-T9N-B 2SC2655L-x-T9N-B 2SC2655Gx-T9N-B 2SC2655-x-T9N-K 2sc2655 2SC2655G transistor 2SC2655 equivalent 2SC2655 2SC2655L QW-R211-013 2SC2655 NPN Transistor 2SC2655-G PDF

    2sc2655

    Abstract: 2c2655 2SC2655L transistor 2SC2655
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES *Low saturation voltage VCE SAT = 0.5V (Max.) *High speed switching time tstg=1.0µs (Typ.) 1 TO-92NL *Pb-free plating product number: 2SC2655L


    Original     		2SC2655 O-92NL 2SC2655L 2SC2655-x-T9N-B 2SC2655L-x-T9N-B 2SC2655-x-T9N-K 2SC2655L-x-T9N-K 2SC2655-x-T9N-R 2SC2655L-x-T9N-R 2sc2655 2c2655 2SC2655L transistor 2SC2655 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2655 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM: 900 mW (Tamb=25℃) 3. BASE Collector current 2 A ICM: Collector-base voltage


    Original     		O-92MOD 2SC2655 O-92MOD 500mA PDF

    C2655 NPN Transistor

    Abstract: C2655 toshiba marking code transistor 2sc2655 C2655 Y transistor C2655 BR C2655 C2655 characteristics C2655 Y 06 C2655 TRANSISTOR 2SC2655
    Text: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW


    Original     		2SC2655 2SA1020. O-92MOD C2655 NPN Transistor C2655 toshiba marking code transistor 2sc2655 C2655 Y transistor C2655 BR C2655 C2655 characteristics C2655 Y 06 C2655 TRANSISTOR 2SC2655 PDF