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    TRANSISTOR 2SC2216 Search Results

    TRANSISTOR 2SC2216 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SC2216 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR NPN TO-92 FEATURES Amplifier Dissipation NPN Silicon 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. EMITTER Symbol Parameter Value Units


    Original     		PDF 2SC2216 30MHz

    transistor F45

    Abstract: No abstract text available
    Text: FORWARD INTERNATIONAL ELECTRONICS LTD. 2SC2216 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR TV FINAL PICTURE IF AMPLIFIER APPLICATIONS Package: TO-92 * High Gain:Gpe=33dB TYP. (f=45 MHz) * Good Linearity of HFE ABSOLUTE MAXIMUM RATINGS at Tamb=250C


    Original     		PDF 2SC2216 100uA 30MHz 30MHz 45MHz transistor F45

    2SC2216

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR NPN FEATURES Amplifier dissipation NPN Silicon TO-92 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF 2SC2216 30MHz 2SC2216

    2SC2216

    Abstract: 2SC2717
    Text: 2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications • High gain: Gpe = 33dB typ. (f = 45 MHz) · Good linearity of hFE. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage


    Original     		PDF 2SC2216 2SC2717 2SC2216 SC-43 2SC2717

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR（ NPN ） TO— 92 FEATURES Power dissipation PCM: 300m W（Tamb=25℃） Collector current ICM: 50m A Collector-base voltage


    Original     		PDF 2SC2216 270TYP 050TYP

    2SC2216

    Abstract: 2sc221
    Text: 2SC2216 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  Amplifier dissipation NPN Silicon G H Base Emitter Collector J A D A B


    Original     		PDF 2SC2216 17-Feb-2011 30MHz 2SC2216 2sc221

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR NPN TO—92 FEATURES Power dissipation PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range 1. BASE 2. EMITTER


    Original     		PDF 2SC2216

    2SC2216

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR NPN TO—92 FEATURES Power dissipation PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range


    Original     		PDF 2SC2216 O--92 2SC2216

    2SC2216

    Abstract: IB15
    Text: 2SC2216 2SC2216 TRANSISTOR NPN TO—92 FEATURES Power dissipation PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range 1. BASE 2. EMITTER 3. COLLECTOR TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SC2216 O--92 2SC2216 IB15

    transistor cross reference

    Abstract: transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent
    Text: Micro Commercial Components Small Signal Transistor Cross Reference Group by Package FORMALLY MICROSEMI CHATSWORTH SOT-23 PACKAGE MCC PART NUMBER HFE Pc mW Ic (mA) BVcbo (V) BVceo (V) Icb (µ A) vcb(V) Vce(sat) (V) fT (MHz) INDUSTRY STANDARD PART NUMBER


    Original     		PDF OT-23 S9011 S9012 S9013 S9014 S9015 S9016 S9018 S8050 S8550 transistor cross reference transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent

    2SC2216

    Abstract: No abstract text available
    Text: 2SC2216 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC


    Original     		PDF 2SC2216 300mWatts -55OC 100uAdc, 50Vdc, 15mAdc, 100MHz) 2SC2216

    Transistor C2216

    Abstract: C2216 C2216 transistor
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2216 Features • • • • Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V


    Original     		PDF 2SC2216 300mWatts -55OC C2216 10mAdc, 100uAdc, 50Vdc, Transistor C2216 C2216 C2216 transistor

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2216 Features • • • • Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA


    Original     		PDF 2SC2216 -55OC 10mAdc, 100uAdc, 50Vdc,

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2216 Features • • • • Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA


    Original     		PDF 2SC2216 -55OC 10mAdc, 100uAdc,

    transistor 2sc2216

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2216 Features • • • • • • • Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA


    Original     		PDF 2SC2216 -55OC 10mAdc, 100uAdc, transistor 2sc2216

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2216 Features • • • • • • • Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA


    Original     		PDF 2SC2216 -55OC

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2SC2216

    Abstract: 2SC2717
    Text: T O S H IB A 2SC2216,2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 U nit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. . High Gain : Gpe = 33dB Typ. (f=45M Hz) • Good Linearity of hpE- SYMBOL CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SC2216 2SC2717 2SC2216, 45MHz) SC-43

    2sc2717

    Abstract: 2sc2216
    Text: TOSHIBA 2SC2216,2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216f 2SC2717 Unit in mm TV FINAL PICTURE IF AM PLIFIER APPLICATIONS. High Gain : Gpe = 33dB Typ. (f=45MHz) Good Linearity of hpE. M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		PDF 2SC2216 2SC2717 2SC2216f 45MHz) 2SC2717 SC-43

    2216

    Abstract: 2SC2216 2SC2717
    Text: TOSHIBA 2SC2216.2SC2717 2SC2216, 2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS • • . 5.1 MAX. High Gain : Gpe = 33dB Typ. (f = 45 MHz) Good Linearity of hjpg. .n . 0.55 MAX. M AXIM UM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC2216 2SC2717 2SC2216, SC-43 2216 2SC2717

    DC 0509 C

    Abstract: transistor 2sc2216 2SC2216
    Text: 2SC2216,2SC2717 TO SHIBA 2SC2216, 2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV FINAL PICTURE IF AM PLIFIER APPLICATIONS. &1M AX. High Gain : Gpe = 33dB Typ. (f=45MHz) Good Linearity of hjrE. • M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC2216 2SC2717 2SC2216, 45MHz) 2SC2717 DC 0509 C transistor 2sc2216

    OK304

    Abstract: 2sc2216
    Text: 2SC2216,2SC2717 T O S H IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. 5.XMAX. High Gain : Gpe = 33dB Typ. (f=45MHz) Good Linearity of hEE. F a X ol ^ 0.45 o MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC2216 2SC2717 2SC2216, 45MHz) 2SC2717 SC-43 OK304

    2SC2216

    Abstract: 2SC2717
    Text: TOSHIBA 2SC2216.2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. U n i t in m m a iM A X . High Gain : Gpe = 33dB Typ. (f=45MHz) • Good Linearity of hEE. 0.45 F Oì\ X öl ^ O 0.45


    OCR Scan     		PDF 2SC2216 2SC2717 2SC2216, 45MHz) SC-43 2SC2717

    2SC2216

    Abstract: transistor u transistor 2717
    Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR 2SC2216/2717 U nit in mm T V F IN A L PICTURE IF A M P LIF IE R A P P LIC A T IO N S . ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC 2SC2216 Collector Cut-off C urrent 2SC2717 Em itter Cut-off C urrent


    OCR Scan     		PDF 2SC2216/2717 2SC2216 2SC2717 2SC2717 transistor u transistor 2717