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    2SC221 Search Results

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    2SC221 Price and Stock

    Micro Commercial Components 2SC2216-AP

    TRANS NPN 45V 0.05A TO92
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    DigiKey 2SC2216-AP Ammo Pack
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    Hirose Electric Co Ltd HR22-SC-221

    CONTACT SOCKET 24-28AWG CRIMP
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    DigiKey HR22-SC-221 Reel
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    Kyocera AVX Components 1812SC221KAT1A

    Multilayer Ceramic Capacitor, 220 pF, 1500 V, � 10%, X7R, 1812 [4532 Metric] - Tape and Reel (Alt: 1812SC221KAT1A)
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    Avnet Abacus 1812SC221KAT1A Reel 143 Weeks 1,000
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    2SC221 Datasheets (94)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC221 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC221 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC221 Unknown Cross Reference Datasheet Scan PDF
    2SC221 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC221 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC221 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC221 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2210 Various Russian Datasheets Transistor Original PDF
    2SC2210 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2210 Unknown Cross Reference Datasheet Scan PDF
    2SC2210 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC2210 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2210 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2210 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2210 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC2210 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2210 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF
    2SC2210 Sanyo Semiconductor 2SC2210 Scan PDF
    2SC2210C Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2210C Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor, AM RF Amp, Converter Applications Scan PDF

    2SC221 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2216

    Abstract: 2sc221
    Text: 2SC2216 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  Amplifier dissipation NPN Silicon G H Base Emitter Collector J A D A B


    Original     		PDF 2SC2216 17-Feb-2011 30MHz 2SC2216 2sc221

    2SC2216

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR NPN TO—92 FEATURES Power dissipation PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range


    Original     		PDF 2SC2216 O--92 2SC2216

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SC2216   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA Collector-base Voltage:V BR CBO= 50V


    Original     		PDF 2SC2216 -55OC

    2SC2216

    Abstract: No abstract text available
    Text: 2SC2216 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC


    Original     		PDF 2SC2216 300mWatts -55OC 100uAdc, 50Vdc, 15mAdc, 100MHz) 2SC2216

    transistor F45

    Abstract: No abstract text available
    Text: FORWARD INTERNATIONAL ELECTRONICS LTD. 2SC2216 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR TV FINAL PICTURE IF AMPLIFIER APPLICATIONS Package: TO-92 * High Gain:Gpe=33dB TYP. (f=45 MHz) * Good Linearity of HFE ABSOLUTE MAXIMUM RATINGS at Tamb=250C


    Original     		PDF 2SC2216 100uA 30MHz 30MHz 45MHz transistor F45

    2SC2216

    Abstract: IB15
    Text: 2SC2216 2SC2216 TRANSISTOR NPN TO—92 FEATURES Power dissipation PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range 1. BASE 2. EMITTER 3. COLLECTOR TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SC2216 O--92 2SC2216 IB15

    transistor 2sc2216

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2216 Features • • • • • • • Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA


    Original     		PDF 2SC2216 -55OC 10mAdc, 100uAdc, transistor 2sc2216

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2216 Features • • • • Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA


    Original     		PDF 2SC2216 -55OC 10mAdc, 100uAdc,

    2SC2216

    Abstract: 2SC2717
    Text: 2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications • High gain: Gpe = 33dB typ. (f = 45 MHz) · Good linearity of hFE. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage


    Original     		PDF 2SC2216 2SC2717 2SC2216 SC-43 2SC2717

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2216 Features • • • • • • • Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA


    Original     		PDF 2SC2216 -55OC 10mAdc, 100uAdc,

    Transistor C2216

    Abstract: C2216 C2216 transistor
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2216 Features • • • • Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V


    Original     		PDF 2SC2216 300mWatts -55OC C2216 10mAdc, 100uAdc, 50Vdc, Transistor C2216 C2216 C2216 transistor

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2216 Features • • • • Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA


    Original     		PDF 2SC2216 -55OC 10mAdc, 100uAdc, 50Vdc,

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR（ NPN ） TO— 92 FEATURES Power dissipation PCM: 300m W（Tamb=25℃） Collector current ICM: 50m A Collector-base voltage


    Original     		PDF 2SC2216 270TYP 050TYP

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR NPN TO-92 FEATURES Amplifier Dissipation NPN Silicon 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. EMITTER Symbol Parameter Value Units


    Original     		PDF 2SC2216 30MHz

    2sc2216

    Abstract: No abstract text available
    Text: 2SC2216 NPN TO-92 Bipolar Transistors TO-92 1. BASE 2. EMITTER 3. COLLECTOR Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage


    Original     		PDF 2SC2216 30MHz

    2SC2216

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR NPN FEATURES Amplifier dissipation NPN Silicon TO-92 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF 2SC2216 30MHz 2SC2216

    2SC2216

    Abstract: 2SC2717
    Text: T O S H IB A 2SC2216,2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 U nit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. . High Gain : Gpe = 33dB Typ. (f=45M Hz) • Good Linearity of hpE- SYMBOL CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SC2216 2SC2717 2SC2216, 45MHz) SC-43

    OK304

    Abstract: 2sc2216
    Text: 2SC2216,2SC2717 T O S H IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. 5.XMAX. High Gain : Gpe = 33dB Typ. (f=45MHz) Good Linearity of hEE. F a X ol ^ 0.45 o MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC2216 2SC2717 2SC2216, 45MHz) 2SC2717 SC-43 OK304

    2SC 1207

    Abstract: 2SC1741A 2SC2274 2SC2926 2SC1214 toshiba 2sc1384 2SC1253 2sc1959 2SC1906 2SC1687
    Text: - 108 - m % 2SC 1185 a n 2SC 1188 a SANYO a 2SC 1187 2SC 1189 M £ Manuf. Type No. £ TOSHIBA B « NEC ±L HITACHI Ä ± FUJITSU Ä & T MATSUSHITA = m MITSUBISHI □ — A ROHM 2SC792 2SC2999 2SC2215 2SC1906 m 2SC2216 2SCÌ906 2SC1687 2SC2926 c 2SC2216 2SC1906


    OCR Scan     		PDF 2SC1185 2SC1187 2SC1188 2SC1189 2SC1190 2SC1192 2SC1193 2SC1196 2SC792 2SC2999 2SC 1207 2SC1741A 2SC2274 2SC2926 2SC1214 toshiba 2sc1384 2SC1253 2sc1959 2SC1906 2SC1687

    2sc2717

    Abstract: 2sc2216
    Text: TOSHIBA 2SC2216,2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216f 2SC2717 Unit in mm TV FINAL PICTURE IF AM PLIFIER APPLICATIONS. High Gain : Gpe = 33dB Typ. (f=45MHz) Good Linearity of hpE. M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		PDF 2SC2216 2SC2717 2SC2216f 45MHz) 2SC2717 SC-43

    2SC2216

    Abstract: transistor u transistor 2717
    Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR 2SC2216/2717 U nit in mm T V F IN A L PICTURE IF A M P LIF IE R A P P LIC A T IO N S . ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC 2SC2216 Collector Cut-off C urrent 2SC2717 Em itter Cut-off C urrent


    OCR Scan     		PDF 2SC2216/2717 2SC2216 2SC2717 2SC2717 transistor u transistor 2717

    2SC2210

    Abstract: 374F
    Text: 1SE DI 7Ti7D7t. □□□4150" T SANYO SEM ICO NDUCTOR CORP 2SC2210 2003A NPN Epitaxial Planar Silicon Transistor AM R F Am p, Converter Applications 374F Features . Highly resistant to dielectric breakdown and suited for car use. . Good spurious characteristic due to low f<j>.


    OCR Scan     		PDF 2SC2210 B1252 2SC2210 374F

    2216

    Abstract: 2SC2216 2SC2717
    Text: TOSHIBA 2SC2216.2SC2717 2SC2216, 2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS • • . 5.1 MAX. High Gain : Gpe = 33dB Typ. (f = 45 MHz) Good Linearity of hjpg. .n . 0.55 MAX. M AXIM UM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC2216 2SC2717 2SC2216, SC-43 2216 2SC2717

    Untitled

    Abstract: No abstract text available
    Text: 1SE DI 7Ti7D7t. □□□4150" T SANYO SEM ICO NDUCTOR CORP 2SC2210 2003A NPN Epitaxial Planar Silicon Transistor AM R F Am p, Converter Applications 374F Features . Highly resistant to dielectric breakdown and suited for car use. . Good spurious characteristic due to low f<j>.


    OCR Scan     		PDF 2SC2210 IS-126 1S-126A IS-20MA