MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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2SC2120
Abstract: 2sC2120 y transistor transistor 2sc2120
Text: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SC2120
700mA
500mA,
2SC2120
2sC2120 y transistor
transistor 2sc2120
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2SC2120
Abstract: 2sc2120 equivalent 2sC2120 y transistor
Text: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SC2120
100mA
700mA
500mA,
2SC2120
2sc2120 equivalent
2sC2120 y transistor
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2SC2120
Abstract: 2sc2120 equivalent
Text: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SC2120
100mA
700mA
500mA,
2SC2120
2sc2120 equivalent
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2SC2120
Abstract: 2sc2120 equivalent 2sC2120 transistor 2sC2120 y transistor
Text: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SC2120
700mA
500mA,
2SC2120
2sc2120 equivalent
2sC2120 transistor
2sC2120 y transistor
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2SC5471
Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
Text: Part Number Product Category Polarity Collector-Emitter Voltage V_CEO,max V 2SC1815 Transistor for Low-Frequency Small-Signal Amplification NPN 50.0 150.0 0.25 2SA1015 Transistor for Low-Frequency Small-Signal Amplification PNP -50.0 -150.0 -0.3 2SC2458 Transistor for Low-Frequency Small-Signal Amplification NPN
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2SC1815
2SA1015
2SC2458
2SA1048
2SC2240
2SA970
2SC2459
2SA1049
A1587
2SC4117
2SC5471
2SC5853
2sa1015 transistor
2sc1815 transistor
2SA970 transistor
2SC5854
transistor 2sc1815
2Sc5720 transistor
2SC5766
Low-Frequency Low-Noise PNP transistor
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2SC2120
Abstract: No abstract text available
Text: DC COMPONENTS CO., LTD. 2SC2120 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Collector 3 = Base o
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2SC2120
500mA,
100mA,
2SC2120
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2SC2120
Abstract: 2SA950
Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics
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2SC2120
2SA950
SC-43
2SC2120
2SA950
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2SA950
Abstract: 2SC2120
Text: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
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2SA950
2SC2120
SC-43
2SA950
2SC2120
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURES y 1W Output Applications y Complementary to 2SC2120 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol
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2SA950
2SC2120
-10mA
-100mA
-700mA
-500mA,
-20mA
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2SC2120
Abstract: 2SA950
Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 · 1 watts amplifier applications. · Complementary to 2SA950 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics
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2SC2120
2SA950
SC-43
2SC2120
2SA950
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2SA950
Abstract: 2sa950y 2SA950-Y 2sc212 2SA950 PNP 2SA950-O 2SC2120
Text: 2SA950 -0.8A , -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES 1W output applications Complementary to 2SC2120 G H Emitter Collector Base
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2SA950
2SC2120
2SA950-O
2SA950-Y
14-Feb-2011
-10mA,
-100mA
-700mA
-500mA,
-20mA
2SA950
2sa950y
2SA950-Y
2sc212
2SA950 PNP
2SA950-O
2SC2120
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2SA950 PNP
Abstract: 2SA950 2SC2120 35VCEO
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURES y 1W output applications y complementary to 2SC2120 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol
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2SA950
2SC2120
-100mA
-700mA
-500mA,
-20mA
-10mA
2SA950 PNP
2SA950
2SC2120
35VCEO
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2222s
Abstract: 2SA950 2SC2120
Text: 1112SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics
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1112SC2120
2SC2120
2SA950
SC-43
2222s
2SA950
2SC2120
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2SA950
Abstract: 2SC2120
Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
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2SC2120
2SA950
SC-43
2SA950
2SC2120
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Untitled
Abstract: No abstract text available
Text: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating
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2SA950
2SC2120
SC-43
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IC 7411 DATA SHEET
Abstract: IC 7411 2sC2120 transistor f 7416 IC 7411 datasheet IC 7416 2SC2120 Voltts IC 7416 datasheet 7411 IC
Text: TO-92 PLASTIC-ENCAPSULATE TRANSISTORS 2SC2120 TRANSISTOR NPN FEATURES Power dissipation PCM: 0.6W (Tamb=25ºC) Collector Current TO-92 ICM: 0.8A 1. EMITTER Collector-base voltage V 2. COLLECTOR : 35V (BR) CBO Operating and storage junction temperature range
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2SC2120
500mA,
2SC2120
IC 7411 DATA SHEET
IC 7411
2sC2120 transistor
f 7416
IC 7411 datasheet
IC 7416
Voltts
IC 7416 datasheet
7411 IC
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2SC2120
Abstract: 2SA950
Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
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2SC2120
2SA950
2SC2120
2SA950
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2SA950
Abstract: 2SC2120 2SA950 Y
Text: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 · 1 W output applications · Complementary to 2SC2120 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating
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2SA950
2SC2120
SC-43
2SA950
2SC2120
2SA950 Y
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC2120 TRANSISTOR NPN 1. EMITTER FEATURES z High DC Current Gain z Complementary to 2SA950 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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2SC2120
2SA950
100mA
500mA
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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Untitled
Abstract: No abstract text available
Text: FORWARD INTIRNATONAL ELECTRONICS LID . 2SC2120 SEMICONDUCTOR "" TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY A M PLIFIER H IG H FREQUENCY OSC. Package: TO-92 * Complement to 2SA950 * Collector-Emitter Voltage VCEO=30V C haracteristic Symbol R ating
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2SC2120
2SA950
100uA
100mA
500mA
500mA
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2SC2120
Abstract: ZZ25 2SA950 ZZ25IZI
Text: TOSHIBA_ 2SC2120 2 S C 2 1 20 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • High hpE • hpE (l) = 100—320 1 Watts Amplifier Applications.
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2SC2120
2SA950
SC-43
ZZ25IZI
2SC2120
ZZ25
2SA950
ZZ25IZI
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