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    Abstract: 2SA950 2SC2120
    Text: 1112SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 1112SC2120 2SC2120 2SA950 SC-43 2222s 2SA950 2SC2120