TRANSISTOR 2N7053 Search Results

TRANSISTOR 2N7053 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 2N7053 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TRANSISTORS BJT bc548 Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302 Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002	Original	OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302	PDF
TRANSISTOR 2N7053 Abstract: 2N7052 2N7053 NZT7053 Text: 2N7052 2N7053 NZT7053 C E C C B B TO-92 SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*	Original	2N7052 2N7053 NZT7053 OT-223 2N7052 2N7053 TRANSISTOR 2N7053 NZT7053	PDF
PNP 3-224 Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A Text: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11	Original	PN100 PN100A MMBT100 MMBT100A PN200 PN200A MMBT200 MMBT200A FPN330 FPN330A PNP 3-224 NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A	PDF
2N7051 Abstract: 2N7053 CBVK741B019 F63TNR NZT7053 PN2222N S4-70 2N705 Text: 2N7053 NZT7053 C E C B TO-92 E C C B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*	Original	2N7053 NZT7053 O-226 OT-223 2N7051 2N7053 CBVK741B019 F63TNR NZT7053 PN2222N S4-70 2N705	PDF
2N7052 Abstract: 2N7053 NZT7053 Text: 2N7053 2N7052 NZT7053 C E C B C TO-92 C E B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*	Original	2N7053 2N7052 NZT7053 O-226 OT-223 2N7052 2N7053 NZT7053	PDF
NZT7053 Abstract: 2N7052 2N7053 CBVK741B019 F63TNR PN2222N Text: 2N7053 2N7052 NZT7053 C E C B C TO-92 C E B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*	Original	2N7053 2N7052 NZT7053 O-226 OT-223 NZT7053 2N7052 2N7053 CBVK741B019 F63TNR PN2222N	PDF
2N7051 Abstract: 2N7053 CBVK741B019 F63TNR NZT7053 PN2222N Text: 2N7053 NZT7053 C E C B TO-92 E C C B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*	Original	2N7053 NZT7053 O-226 OT-223 2N7051 2N7053 CBVK741B019 F63TNR NZT7053 PN2222N	PDF
2N7051 Abstract: 2N7053 NZT7053 Text: 2N7053 NZT7053 C E C B TO-92 E C C B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*	Original	2N7053 NZT7053 O-226 OT-223 2N7051 2N7053 NZT7053	PDF
TRANSISTOR 2N7053 Abstract: NZT7053 Text: 2N7051 / 2N7053 / NZT7053 2N7051 2N7053 NZT7053 C C B TO-92 E C B TO-226 SOT-223 E B E C NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06.	Original	2N7051 2N7053 NZT7053 2N7051 2N7053 O-226 OT-223 OT-223 TRANSISTOR 2N7053 NZT7053	PDF
transistor 2N5952 Abstract: transistor KSP44 bc558 zener diode reference guide 1n967b schottky 1n5248 KBL BRIDGE RECTIFIER 005 FYPF2004DN BAV99Wt1g BC337 Text: Small Signal Transistors & Diodes Selection Guide Fairchild Semiconductor, a long-time, leading global supplier of high performance semiconductors, offers a broad range of small signal transistor and diode products—from JFETs, Schottky, and rectifiers, to RF transistors, TRIACs and more. You will not only find the performance that you want, you will also	Original		PDF
ss8050 d 331 Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34 Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2	Original	F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34	PDF
transistor 2N3563 Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .	Original		PDF
thermistor KSD201 Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™	Original		PDF
thermistor KSD201 Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM	Original	TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd	PDF

Untitled Abstract: No abstract text available Text: R G H Discrete POWER & Signal Technologies II - P SEMICONDUCTOR tm 2N7052 2N7053 NZT7053 NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06.	OCR Scan	2N7052 2N7053 NZT7053 2N7052 2N7053	PDF
NZT7053 Abstract: No abstract text available Text: M ICÜNDUCTQR tm 2N7052 2N7053 NZT7053 SOT-223 NPN Darlington Transistor T his device is designed for applications requiring extrem ely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum RâtinÇjS	OCR Scan	2N7052 2N7053 NZT7053 2N7052 2N7053 OT-223 NZT7053	PDF
2N7053 Abstract: No abstract text available Text: 2N7052/2N7053 National Juä Semiconductor O T 2N7052 li 2N7053 U TO" 92 V TO-2 2 6 « C 1 T L / G /1 0 1 0 0 - 4 NPN Darlington Transistor Electrical Characteristics ta = 25*c unless otherwise noted Parameter Symbol Min Max Units OFF CHARACTERISTICS V BR CBO	OCR Scan	2N7052/2N7053 2N7052 2N7053 2N7053	PDF