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    TRANSISTOR 2N3904 E 25 Search Results

    TRANSISTOR 2N3904 E 25 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2N3904 E 25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ct 2N3904

    Abstract: No abstract text available
    Text: 2N3904 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment 2N3904 2N3904 TO-92 / Bulk 2N3904-AP 2N3904 TO-92 / Ammopack s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t


    Original     		PDF 2N3904 2N3904-AP 2N3906 ct 2N3904

    2n3904

    Abstract: 2n3904 225 2n3904 npn 2N3903 transistor switching transistor 30v npn transistor 2N3905 TRANSISTOR 2N3904 E 25
    Text: 2N3903 2N3904 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3903 and 2N3904 types are NPN silicon transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N3905 and 2N3906.


    Original     		PDF 2N3903 2N3904 2N3905 2N3906. 100mA 100MHz 100kHz 2n3904 225 2n3904 npn 2N3903 transistor switching transistor 30v npn transistor 2N3905 TRANSISTOR 2N3904 E 25

    pin configuration NPN transistor 2N3904

    Abstract: 2N3904 plastic 2N3904 2N3906 MMBT3904 PNP switching transistor 2N3906
    Text: 2N3904 Small Signal Transistor NPN t c u d o r P w e N TO-226AA (TO-92) Features 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP transistor


    Original     		PDF 2N3904 O-226AA 2N3906 OT-23 MMBT3904. pin configuration NPN transistor 2N3904 2N3904 plastic 2N3904 MMBT3904 PNP switching transistor 2N3906

    2N3904

    Abstract: 2n3904 application 2n3904 TO-92 2N3904 dimension TRANSISTOR 2N3904 E 25 22N3904 2N3906 2N3906E
    Text: 2N3904 NPN Silicon Transistor Descriptions PIN Connection • General small signal application • Switching application C Features B C B E • Low collector saturation voltage • Collector output capacitance • Complementary pair with 2N3906 E TO-92 Ordering Information


    Original     		PDF 2N3904 2N3906 KSD-T0A033-000 2N3904 2n3904 application 2n3904 TO-92 2N3904 dimension TRANSISTOR 2N3904 E 25 22N3904 2N3906 2N3906E

    2N3055 TO220

    Abstract: NPN Transistor 2N3055 darlington 100 amp npn darlington power transistors transistor BC107 specifications tip122 tip127 audio amp NPN Transistor TO92 10 amp npn darlington power transistors transistor 2n3053 DATASHEET Transistor BC107 2N3055 NPN Transistor
    Text: TRANSISTOR SPECIFICATIONS - A TYPICAL TABLE FROM A CATALOGUE Transistor Polarity Number BC107 BC108 2N3904 ZTX300 2N3053 BFY51 TIP31A 2N3055 Case IC max VCE hFE Power NPN NPN NPN NPN NPN NPN NPN NPN Style TO18 TO18 TO92 E-line TO39 TO39 TO220 TO3 mA 100


    Original     		PDF BC107 BC108 2N3904 ZTX300 2N3053 BFY51 TIP31A 2N3055 BC178 BC559 2N3055 TO220 NPN Transistor 2N3055 darlington 100 amp npn darlington power transistors transistor BC107 specifications tip122 tip127 audio amp NPN Transistor TO92 10 amp npn darlington power transistors transistor 2n3053 DATASHEET Transistor BC107 2N3055 NPN Transistor

    1N916

    Abstract: 2N3904 2N3906
    Text: SEMICONDUCTOR 2N3904 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C A FEATURES Low Leakage Current N : ICEX=50nA Max. , IBL=50nA(Max.) K @VCE=30V, VEB=3V. E G Excellent DC Current Gain Linearity. J D


    Original     		PDF 2N3904 2N3906. 1N916 2N3904 2N3906

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N3904 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C A FEATURES Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) N E K @VCE=30V, VEB=3V. G D J Excellent DC Current Gain Linearity.


    Original     		PDF 2N3904 2N3906.

    PNP switching transistor 2N3906 mhz

    Abstract: transistor 2N3905 2n3906 2N3906 NPN Transistor 2N3904 CENTRAL
    Text: 2N3905 2N3906 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3905 and 2N3906 types are PNP silicon transistors designed for general purpose amplifier and switching applications. NPN complementary types are 2N3903 and 2N3904.


    Original     		PDF 2N3905 2N3906 2N3903 2N3904. 100mA 100MHz 100kHz PNP switching transistor 2N3906 mhz transistor 2N3905 2N3906 NPN Transistor 2N3904 CENTRAL

    2N3904

    Abstract: 2N3906
    Text: 2N3904 NPN SMALL SIGNAL TRANSISTOR Features Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Type Available 2N3906 E A TO-92 B C Mechanical Data Case: TO-92, Plastic


    Original     		PDF 2N3904 2N3906) MIL-STD-202, 100MHz 100kHz 15000Hz 2N3904 2N3906

    2N3906

    Abstract: tr 2n3906 2N3906 plastic 2N3906 die 2N3904 MMBT3906 marking k3 pnp
    Text: 2N3906 PNP SMALL SIGNAL TRANSISTOR Features • · · · Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and Amplifier Applications Complementary NPN Types Available 2N3904 E A TO-92 B C Mechanical Data


    Original     		PDF 2N3906 2N3904) MIL-STD-202, MMBT3906 DS11202 2N3906 tr 2n3906 2N3906 plastic 2N3906 die 2N3904 MMBT3906 marking k3 pnp

    2N3904

    Abstract: 2n3904 225 2N3906
    Text: 2N3904 NPN SMALL SIGNAL TRANSISTOR Features • · · · Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Type Available 2N3906 E A TO-92 B C Mechanical Data


    Original     		PDF 2N3904 2N3906) MIL-STD-202, 100MHz 100mA, 15000Hz 300ms, DS11102 2N3904 2n3904 225 2N3906

    Untitled

    Abstract: No abstract text available
    Text: MPQ6700 SILICON COMPLEMENTARY QUAD TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPQ6700 is comprised of two 2N3904 NPN chips and two 2N3906 (PNP) chips to be used as dual complementary pairs for general purpose amplifier and switching


    Original     		PDF MPQ6700 MPQ6700 2N3904 2N3906 O-116

    Untitled

    Abstract: No abstract text available
    Text: 2N3904 NPN Silicon Transistor Descriptions PIN Connection • General sm all signal applicat ion • Swit ching applicat ion C Features B C B E • Low collect or sat urat ion volt age • Collect or out put capacit ance • Com plem ent ary pair wit h 2N3906


    Original     		PDF 2N3904 2N3906 KSD-T0A033-000

    2N3904

    Abstract: 2n3904 specification NPN Transistor TO92 40V 200mA TRANSISTOR 2N3904 E 25 2N3904 transistor free h 2n3904 2N3904G 2N3904-Y transistor NPN 2N3904 2n3904 datasheet
    Text: 2N3904 0.2A, 60V NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 Power Dissipation PCM: 625mW Ta=25°C Collector Current ICM: 200mA Collector – Base Voltage V(BR)CBO: 60V


    Original     		PDF 2N3904 625mW 200mA 2N3904-O 2N3904-Y 2N3904-G 31-Dec-2010 100MHz 2N3904 2n3904 specification NPN Transistor TO92 40V 200mA TRANSISTOR 2N3904 E 25 2N3904 transistor free h 2n3904 2N3904G 2N3904-Y transistor NPN 2N3904 2n3904 datasheet

    Untitled

    Abstract: No abstract text available
    Text: 2N3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V C e o = 4 0 V • Collector Dissipation: Pc max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO 60 40 6 200 625 150


    OCR Scan     		PDF 2N3904 625mW 100mA, 100MHz

    2N3904

    Abstract: 2N3906
    Text: SEMICONDUCTOR TECHNICAL DATA 2N3904 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c e x =50nA Max. , IBL=50nA(Max.) @ V ce =30V , Veb=3V. • Excellent DC Current Gain Linearity.


    OCR Scan     		PDF 2N3904 2N3906. 300ns 300//S, 2N3904 2N3906

    n3904

    Abstract: No abstract text available
    Text: 2N3904 NPN SMALL SIGNAL TRANSISTOR Features • • • • Epitaxial Planar Die Construction Available in both Through-Hole andSurface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Type Available . . . . r E"H r“A-H IT


    OCR Scan     		PDF 2N3904 2N3906) MIL-STD-202, 100MHz 100kHz 15000Hz 300ns, DS11102 N3904 n3904

    2n3904 transistor

    Abstract: 2N3904, transistor 2N3904 2n3904transistor ct 2N3904
    Text: Nnnam T O -9 2 P iasti -E n c a p s u la te T ra n s is to rs 2N3904 TRANSISTOR N P N FEATURE Powe dissipation Pcm : 0.625 W (Tamb=25°C) Collecto cu ent : 0-2 A 1c m Collecto -base voltage V(br)cbo •60 V Ope ating and storage junction temperature range


    OCR Scan     		PDF 2N3904 100UA, 100MHz 2N3904 2n3904 transistor 2N3904, transistor 2n3904transistor ct 2N3904

    transistor E 13009

    Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
    Text: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4I26 2N4400 2N4401 transistor E 13009 transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009

    2N3904

    Abstract: 2N3804 transistor ST 2N3904 transistor ST 2N3804 transistor 2n3903 2N3903 2n3904 225 ST 2n3904 transistor 2N 3904 N3903
    Text: 2 N3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR CoN edor-Em itter Voltage: V c e o * 4 0 V C o lle cto r D issipation: P c m ax -62Sm W ABSOLUTE MAXIMUM RATINGS {TA=25t) C h a ra c te ristic C o lle cto r-B ase Voltage Collector-E m itter Voltage


    OCR Scan     		PDF N3903/3904 -62Sm 100mA 100MHz 2N3903/3904 2N3904 2N3804 transistor ST 2N3904 transistor ST 2N3804 transistor 2n3903 2N3903 2n3904 225 ST 2n3904 transistor 2N 3904 N3903

    Untitled

    Abstract: No abstract text available
    Text: 2N3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCeo =40V • Collector Dissipation: Pc max =625mW T O -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF 2N3903/3904 625mW 2N3903 2N3904

    2N3903 transistor

    Abstract: No abstract text available
    Text: rt: N AMER PHILIPS/DISCRETE 25E D bbS'BTBl 0Q174b2 2 I A 2N3903 2N3904 T -3 £ ~ - SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for high-speed, saturated switching applications for industrial service.


    OCR Scan     		PDF 0Q174b2 2N3903 2N3904 2N3905 2N3906. 2N3903 transistor

    2N3903

    Abstract: No abstract text available
    Text: 2N3903 S / S TR ELECTRONICS GENERAL PURPOSE TRANSISTOR Collector-Emitter Voltage: V c e o = 4 0 V Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF 2N3903 625mW 2N3904 30jus, GQ3Dfl00 2N3903

    2N3904

    Abstract: 2N39D4 2N3304 pc 525 2N39Q4 2n3904 225 h 2n3904 2N3904S 2N3903 2N39Q3
    Text: 2N3904 S/S TR r-r. ELECTRONICS GENERAL PURPOSE TRANSISTOR Colledor-Emitter Voltage: VCEOm40V Collector Dissipation: ABSOLUTE MAXIMUM RATINGS TA=25t: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		PDF 2N39Q4 VCEOm40V 2N3904 2N3904 2N3904) 2N39D4 2N3304 pc 525 2n3904 225 h 2n3904 2N3904S 2N3903 2N39Q3