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    TRANSISTOR 2N2369 NOISE Search Results

    TRANSISTOR 2N2369 NOISE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2N2369 NOISE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Instruments

    Abstract: AN13F IC 7404 GP ttl ceramic oscillator using 7404 HP-HEMT-6000 precision Sine 1Mhz Wave Generator sinewave-generator of ic 7475 used in fastest finger first ttl 7474 sine wave 7404 ttl inverter photos
    Text: Application Note 13 April 1985 High Speed Comparator Techniques Jim Williams INTRODUCTION Comparators may be the most underrated and underutilized monolithic linear component. This is unfortunate because comparators are one of the most flexible and universally applicable components available. In large


    Original     		PDF 2N2369 HP5082-2810 2N3866 2N5160 LT1016 2N2369 an13f AN13-32 Instruments AN13F IC 7404 GP ttl ceramic oscillator using 7404 HP-HEMT-6000 precision Sine 1Mhz Wave Generator sinewave-generator of ic 7475 used in fastest finger first ttl 7474 sine wave 7404 ttl inverter photos

    2N2369 AVALANCHE PULSE GENERATOR

    Abstract: 2N2369 transistor pulse generator 2n2369 avalanche Avalanche Transistor Circuits for Generating nanosecond pulse generator Avtech PICO Electronics 1000V TD1110C ten pao transformer 2N2501
    Text: Application Note 94 May 2003 Slew Rate Verification for Wideband Amplifiers The Taming of the Slew Jim Williams INTRODUCTION Slew rate defines an amplifier’s maximum rate of output excursion. This specification sets limits on undistorted bandwidth, an important capability in A/D driver applications. Slew rate also influences achievable performance in


    Original     		PDF AN94-11 AN94-12 an94f 2N2369 AVALANCHE PULSE GENERATOR 2N2369 transistor pulse generator 2n2369 avalanche Avalanche Transistor Circuits for Generating nanosecond pulse generator Avtech PICO Electronics 1000V TD1110C ten pao transformer 2N2501

    AN72

    Abstract: AN72F PM-5771 2N2369 avalanche an7212 2N2369 AVALANCHE PULSE GENERATOR an7210 application circuits of ic 74121 LM733 2tx-849
    Text: Application Note 72 May 1998 A Seven-Nanosecond Comparator for Single Supply Operation Guidance for Putting Civilized Speed to Work Jim Williams INTRODUCTION In 1985 Linear Technology Corporation introduced the LT 1016 Comparator. This device was the first readily


    Original     		PDF LT1016 LT1016, LT1394, AN72-41 90VDC AN72-42 V-to-90V AN72-43 AN72-44 an72f AN72 PM-5771 2N2369 avalanche an7212 2N2369 AVALANCHE PULSE GENERATOR an7210 application circuits of ic 74121 LM733 2tx-849

    lm2311

    Abstract: 2N3546 PN2369 EQUIVALENT 2N3639 4N32 pinout "1N6263" AM79865 1N6263 2N2369 C6 FTP
    Text: Advanced Micro Devices FDDI on Copper with AMD PHY Components by Eugen Gershon Publication # 15923 Rev. Amendment A /0 Issue Date 6/91  1991 Advanced Micro Devices, Inc. FDDI on Copper with AMD PHY Components by Eugen Gershon and pin-out compatible with the MIC device found on


    Original     		PDF 6011A) solutiAm79866 LM361 1N6263 Am79865 5923A-007A lm2311 2N3546 PN2369 EQUIVALENT 2N3639 4N32 pinout "1N6263" 1N6263 2N2369 C6 FTP

    2N2369 avalanche

    Abstract: 2N2369 transistor pulse generator 2N2369 AVALANCHE PULSE GENERATOR Tektronix P6056 2N2501 MOTOROLA P-6056 CTX-02-16004 motorola transistor handbook 2N3866 application note crystal generator 1GHz
    Text: Application Note 122 January 2009 Diode Turn-On Time Induced Failures in Switching Regulators Never Has so Much Trouble Been Had By so Many with so Few Terminals Jim Williams David Beebe Introduction A potential difficulty due to diode turn-on time is that


    Original     		PDF AN122 350ps an122f AN122-19 AN122-20 2N2369 avalanche 2N2369 transistor pulse generator 2N2369 AVALANCHE PULSE GENERATOR Tektronix P6056 2N2501 MOTOROLA P-6056 CTX-02-16004 motorola transistor handbook 2N3866 application note crystal generator 1GHz

    HP 2602

    Abstract: hp2602 LM11 op amp HP-2602 "Secret Life of Capacitors" 2N2222-2N2369 Cambridge KELVIN-VARLEY voltage DIVIDER dielectric absorption KELVIN-VARLEY DIVIDER
    Text: National Semiconductor Application Note 260 January 1981 By combining an ‘‘inferior’’ 20 year old A D conversion technique with a microprocessor a developmental A D converter achieves 1 part-per-million 20-bit linearity The absolute accuracy of the converter is primarily limited by the


    Original     		PDF 20-bit) HP 2602 hp2602 LM11 op amp HP-2602 "Secret Life of Capacitors" 2N2222-2N2369 Cambridge KELVIN-VARLEY voltage DIVIDER dielectric absorption KELVIN-VARLEY DIVIDER

    HP 2602

    Abstract: LM11 op amp HP2602 HP-2602 2n22222 "Secret Life of Capacitors" LM11 OP KELVIN-VARLEY DIVIDER LM11 national INS8070
    Text: National Semiconductor Application Note 260 January 1981 By combining an “inferior”, 20 year old A/D conversion technique with a microprocessor, a developmental A/D converter achieves 1 part-per-million 20-bit linearity. The absolute accuracy of the converter is primarily limited by the voltage


    Original     		PDF 20-bit) HP 2602 LM11 op amp HP2602 HP-2602 2n22222 "Secret Life of Capacitors" LM11 OP KELVIN-VARLEY DIVIDER LM11 national INS8070

    lm733

    Abstract: tunable crystal oscillator cd4051 space C-2350N-14 LT1004-2 LT1016 LT1394 T1116 1N4148 2N2369
    Text: DESIGN FEATURES A 7ns, 6mA, Single-Supply Comparator Fabricated on Linear’s 6GHz Complementary Bipolar Process by Jim Williams and Brian Hamilton Introduction The LT1394 is an ultrafast 7ns , low power (6mA), single-supply comparator designed to operate on either 5V


    Original     		PDF LT1394 LT1394 LTC1401 LTC1404 CD4051, 74HC4051 LTC1391) LTC1401 lm733 tunable crystal oscillator cd4051 space C-2350N-14 LT1004-2 LT1016 T1116 1N4148 2N2369

    16f73

    Abstract: 74ACH14 cd4040 application note 16f73 rs232 LT1150 74ACH74 LSK389 equivalent 2N2369 avalanche 2N2369 AVALANCHE PULSE GENERATOR Notebook lcd inverter schematic
    Text: Application Note 113 August 2007 Power Conversion, Measurement and Pulse Circuits Tales From the Laboratory Notebook, 2005-2007 Jim Williams INTRODUCTION This ink marks LTC’s eighth circuit collection publication.1 We are continually surprised, to the point of near mystification, by these circuit amalgams seemingly limitless


    Original     		PDF an113f AN113-19 AN113-20 16f73 74ACH14 cd4040 application note 16f73 rs232 LT1150 74ACH74 LSK389 equivalent 2N2369 avalanche 2N2369 AVALANCHE PULSE GENERATOR Notebook lcd inverter schematic

    2N2477

    Abstract: 2N2222 2N2219 transistor 2N2938 2N2221 2N2483 FF2221E FF2221J FF2222E FF2222J
    Text: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium


    OCR Scan     		PDF FF3725J FF2221E FF2221J 2N2221 FF2222E FF2222J 2N2222 FF2483E FF2483J 2N2907A 2N2477 2N2222 2N2219 transistor 2N2938 2N2483

    diode D07-15

    Abstract: diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 1N814 D07 15 DIODE 1N3605
    Text: SILICON SIGNAL DIODES 100 MA TYPFS SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification


    OCR Scan     		PDF 1N251 1N252 1N461 1N625 1N62G 1N814 1N903 1N903A 1N904 1N914 diode D07-15 diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 D07 15 DIODE 1N3605

    PNP Transistor 2N2222 equivalent

    Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching
    Text: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification Sheet No. 1 35.90 1N914B M46P-X510


    OCR Scan     		PDF 1N914 1N914A 1N914B M46P-X510 1N3064 M46P-X507 1N3600 1N3605 M46P-X516 1N4150 PNP Transistor 2N2222 equivalent DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching

    marking code ff SMD Transistor

    Abstract: SMD MARKING CODE C2U SMD MARKING CODE C1G C2U SOT-89 transistor smd 2N4403 c1g smd 2N3904 TRANSISTOR SMD SOT23 transistor 2N2222A RF transistor marking IN SOT-89 2N3640
    Text: CENTRAL SE MI C ON D UC T O R ÜË dI~ § M a n ta 00G0430 3 f r-z 7 -2 ? ~ @§nijg§£3S Cestirai liüiie@ndugf@? gsrp. ♦I Central semiconductor Corp. Ï S tfii s@rusüG mö©g @? @@pp. SURFACE MOUNTED DEVICES TRANS I St OÄ: SOT- 23, SOT-89 145 Adams Avenue


    OCR Scan     		PDF DDQD43D OT-23, OT-89 OT-23 CMPT918 2N918 CMPT2222A CXT390A CXT3904 2N3904 marking code ff SMD Transistor SMD MARKING CODE C2U SMD MARKING CODE C1G C2U SOT-89 transistor smd 2N4403 c1g smd 2N3904 TRANSISTOR SMD SOT23 transistor 2N2222A RF transistor marking IN SOT-89 2N3640

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    SS321 equivalent

    Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
    Text: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4


    OCR Scan     		PDF MA1703 MA1704 SS321 SS322 SS324 SS325 SS334 SS337 SE708 DZ800 SS321 equivalent DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 2N2222 chip 2N2369 transistor

    bc109 Transistor Equivalent list

    Abstract: npn transistor w6 2N2484 equivalent transistors transistor equivalent table bc109 transistor BC109 ZTX341 f021 2N930 BAW63 BFS36
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A bc109 Transistor Equivalent list npn transistor w6 2N2484 equivalent transistors transistor equivalent table bc109 transistor BC109 ZTX341 f021

    2N2219 transistor substitute

    Abstract: 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan     		PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2219 transistor substitute 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    mps 2369 M

    Abstract: 2N3117 MPS 3117 2n2405 2N5769 JSW 70 2n2484 2N2586 mps 2369 AM 27533 DC
    Text: FAIRCHILD SEMICONDUCTOR n ra n B B A4 DE I BLl b ci b 7 4 UUdí'iJdb n I 2N/PN/MPS/FTS02369 2N/PN/MPS/FTS02369A. 2N/FTS05769 i FAIRCHILD A Schlum berger C om pany NPN High Speed Saturated Switches • • • • PACKAGE 2N2369 2N2369A 2N5769 PN2369 PN2369A


    OCR Scan     		PDF 2N/PN/MPS/FTS02369 2N/PN/MPS/FTS02369A. 2N/FTS05769 2N2369 2N2369A 2N4209 2N5771 2N5769 PN2369 PN2369A mps 2369 M 2N3117 MPS 3117 2n2405 JSW 70 2n2484 2N2586 mps 2369 AM 27533 DC

    2N2926 equivalent

    Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan     		PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2926 equivalent beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent

    beta transistor 2N2222

    Abstract: 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 2N2714 1N9148 beta transistor 2N2712 2N2905 2N2219 2n3390 equivalent beta transistor 150
    Text: N PN SILICON SIG N AL G E N E R A L P U R P O S E A M P LIF IER S A N D SWITCHES V CE iat Type 2N2711 30*90 2N2712 75-225 2N2713 30-90 2N2714 75-225 2N2923 90-180 ' 2N2924 150-300 < 2N2925 235-470' 2N2926 35-470 ’ 2N3390 400-800 2N3391 250-500 Ccb @ 10V


    OCR Scan     		PDF 2N2711 2N2712 2N2713 2N2714 150mA 2N2923 2N2924 2N2925 2N3976 M23P-XS16 beta transistor 2N2222 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 1N9148 beta transistor 2N2712 2N2905 2N2219 2n3390 equivalent beta transistor 150

    beta transistor 2N2222

    Abstract: 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 GET3S3B GET3638A 2NSOOO 2N6001 2N6003 2N6000 2N6002 2N60D2 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003


    OCR Scan     		PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 beta transistor 2N2222 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002

    sg3526 application note

    Abstract: sg1526 power supply 24v dc power supply with sg3526 application note sg3526 12v dc power supply with sg3526 SG3526 SG3526 boost sg1526 sg3526 pwm power supply sg3526 power supply
    Text: SG1526/SG2526/SG3526 SILICON GENERAL LINEAR INTEG RATED CIRCUITS REGULATING PULSE WIDTH MODULATOR D E S C R IP T IO N FEATURES The SG1526 is a high performance monolithic pulse width modulator circuit designed forfixed-frequency switching regulators and other power


    OCR Scan     		PDF SG1526/SG2526/SG3526 SG1526 18-pin ease1526F 20-PIN SG1526L/883B SG1526L sg3526 application note sg1526 power supply 24v dc power supply with sg3526 application note sg3526 12v dc power supply with sg3526 SG3526 SG3526 boost sg3526 pwm power supply sg3526 power supply

    ci sn7402

    Abstract: 10GHz OSCILLATOR pulse generator LT1017 failure rate LT1017 LM111 LT1011 Transistor 2N3866 1Hz-10MHz AM6012 LT1016CS8
    Text: r r m r LT1011/LTlOl 1A n TECHNOLOGY Voltage Com parator FCftTURCS D6SCRIPTIOI1 • Pin-Compatible with LM111 Series Devices ■ Guaranteed Max. 0.5mV Input Offset Voltage ■ Guaranteed Max. 25nA Input Bias Current ■ Guaranteed Max. 3nA Input Offset Current


    OCR Scan     		PDF LM111 250ns LT1011/LT1011A LT1011 LM111. HP5082-2810 RL1123-4 1N4148 g10kt 2N3904 ci sn7402 10GHz OSCILLATOR pulse generator LT1017 failure rate LT1017 Transistor 2N3866 1Hz-10MHz AM6012 LT1016CS8