transistor 2n1711
Abstract: 2N1711 BP317 st 2n1711 "2N1711" 2N1711 philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification NPN medium power transistor
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M3D111
2N1711
MAM317
SCA54
117047/00/02/pp8
transistor 2n1711
2N1711
BP317
st 2n1711
"2N1711"
2N1711 philips
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage, RBE < 10Ω Ω
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2N1711
C-120
2N1711Rev
040406E
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2N1711
Abstract: transistor 2n1711 ts 4141 TRANSISTOR
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage, RBE < 10Ω Ω
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2N1711
C-120
2N1711Rev
040406E
2N1711
transistor 2n1711
ts 4141 TRANSISTOR
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transistor 2N1711
Abstract: 2N1711 cdil 2N1711 2N1711 Data Sheet equivalent transistor 2N1711 RS510
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package N-P-N Double Diffused Transistor in a TO-39 Metal Package for a Wide Variety of Applications Such As d.c. and Wideband Amplifiers.
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2N1711
C-120
2N1711Rev250701
transistor 2N1711
2N1711 cdil
2N1711
2N1711 Data Sheet
equivalent transistor 2N1711
RS510
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Untitled
Abstract: No abstract text available
Text: 2N1711 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1711 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE
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2N1711
2N1711
150mA,
150mA
500mA
20MHz
100kHz
23-April
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Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package N-P-N Double Diffused Transistor in a TO-39 Metal Package for a Wide Variety of Applications Such As d.c. and Wideband Amplifiers.
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2N1711
C-120
2N1711Rev250701
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BC108 characteristic
Abstract: BC237 c 2026 y transistor msc2295 marking 7m SOT-323
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors MUN5211DW1T1 SERIES NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a
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MUN5211DW1T1
Reduc218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC108 characteristic
BC237
c 2026 y transistor
msc2295
marking 7m SOT-323
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BC237
Abstract: equivalent to BC177 2n6431
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5111DW1T1 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a monolithic
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MUN5111DW1T1
Reduc218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
equivalent to BC177
2n6431
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BC237
Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device
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SC-70/SOT-323
Spa218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
level shifter 2N5401
2771 040 0002
MUN5214T1
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transistor BF245
Abstract: BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN SmallĆSignal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The
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OT-223
PZTA14T1
inch/1000
U218A
MSC1621T1
MSC2404
MSD1819A
MV1620
transistor BF245
BC237
transistor motorola 2n3053
MMBF5486
TRANSISTOR REPLACEMENT FOR 2N3053
855 sot363
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its
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Red218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
BC237
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Transistor 2N2905A
Abstract: BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 SERIES Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a
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MUN5311DW1T1
Red218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
Transistor 2N2905A
BC237
applications of Transistor BC108
transistor c-1000
transistor equivalent 2n5551
2N2904 transistor TO92
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SOT23 JEDEC standard orientation pad size
Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is
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OT-223
PZT2222AT1
PZT2907AT1
inch/1000
PZT2907AT3
inch/4000
uni218A
MSC1621T1
SOT23 JEDEC standard orientation pad size
sot-23 npn marking code VD
BC237
p2f sot-23
transistor 2N5458
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its
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70/SOT
Spa218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
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transistor 2N5458
Abstract: BC237 BC848 2N930 NPN transistor FREE
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its
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Red218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
transistor 2N5458
BC237
BC848
2N930 NPN transistor FREE
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BF245 TRANSISTOR
Abstract: transistor BF245 BC237 transistor motorola 2n3053 Transistor BC107b motorola transistor 2N3819
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA64T1 PNP SmallĆSignal Darlington Transistor Motorola Preferred Device This PNP small-signal darlington transistor is designed for use in preamplifiers input applications or wherever it is necessary to have a high input impedance.
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OT-223
PZTA64T1
inch/1000
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
BF245 TRANSISTOR
transistor BF245
BC237
transistor motorola 2n3053
Transistor BC107b motorola
transistor 2N3819
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2N2222A motorola
Abstract: BC237 H2A transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon General Purpose Amplifier Transistor MSB1218A-RT1 Motorola Preferred Devices This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC–70/SOT–323 package
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70/SOT
inch/3000
MSB1218A-RT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
2N2222A motorola
BC237
H2A transistor
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BC237
Abstract: bc547 marking transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon General Purpose Amplifier Transistor 2SA1774 This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT–416/SC–90 package which is designed for low power
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416/SC
inch/3000
2SA1774
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
bc547 marking transistor
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EQUIVALENT FOR zt751
Abstract: zt751 TRANSISTOR zt751 BC237 transistor BF245
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZT751T1 PNP Silicon Planar Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for
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PZT751T1
inch/1000
PZT751T3
inch/4000
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
EQUIVALENT FOR zt751
zt751
TRANSISTOR zt751
BC237
transistor BF245
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transistor npn double
Abstract: TO-39 CASE to ambient 2N1711 D73 transistor
Text: N AUER PHILIPS/DISCRETE b^E T> • bbS3*131 GD2ÔD73 275 2N1711 SILICON PLANAR TRANSISTOR N-P-N double diffused transistor in a TO-39 metal envelope designed fora wide variety of applications such as d.c. and wideband amplifiers. QUICK REFERENCE DATA Collector-base voltage open emitter
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2N1711
7Z593220
bb53T31
002007b
transistor npn double
TO-39 CASE to ambient
2N1711
D73 transistor
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bRE D APX bbSB'iai 0 0 2 S 0 7 3 272 2N1711 SILICON PLANAR TRANSISTOR N-P-N double diffused transistor inaTO-39 metal envelope designed for a wide variety of applications such as d.c. and wideband amplifiers. QUICK REFERENCE DATA Collector-base voltage open emitter
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2N1711
inaTO-39
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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