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    TRANSISTOR 2N06L35 Search Results

    TRANSISTOR 2N06L35 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2N06L35 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N06L35

    Abstract: 68w smd transistor 2N06L35 BSPD26N06S2L-35 SPD26N06S2L-35 smd 68w INFINEON PART MARKING to252 68w diode
    Text: SPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 35 mΩ ID 30 A • Logic Level • 175°C operating temperature P- TO252 -3-11 • Avalanche rated • dv/dt rated Type SPD26N06S2L-35


    Original     		SPD26N06S2L-35 Q67060-S7426 2N06L35 BSPD26N06S2L-35, SPD26N06S2L-35 2N06L35 68w smd transistor 2N06L35 BSPD26N06S2L-35 smd 68w INFINEON PART MARKING to252 68w diode PDF

    2n06l35

    Abstract: transistor 2N06L35 IPD26N06S2L-35 PG-TO252-3-11 10026a
    Text: IPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 35 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD26N06S2L-35 PG-TO252-3-11 2N06L35 2n06l35 transistor 2N06L35 IPD26N06S2L-35 PG-TO252-3-11 10026a PDF

    2N06L35

    Abstract: No abstract text available
    Text: IPG20N06S2L-35A OptiMOS Power-Transistor Product Summary VDS 55 V RDS on ,max4) 35 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPG20N06S2L-35A PG-TDSON-8-10 2N06L35 2N06L35 PDF

    2N06L35

    Abstract: 68w smd 2N06L Q67060-S7426 smd 68W
    Text: SPD26N06S2L-35 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 55 V R DS on 35 m ID 30 A P- TO252 -3-11 175°C operating temperature  Avalanche rated  dv/dt rated Type SPD26N06S2L-35 Package Ordering Code


    Original     		SPD26N06S2L-35 SPD26N06S2L-35 Q67060-S7426 2N06L35 BSPD26N06S2L-35, 2N06L35 68w smd 2N06L Q67060-S7426 smd 68W PDF

    2N06L35

    Abstract: 2N06L v5856 GS6010 PCB REV 3.5 IPD26N06S2L-35 2N06L3
    Text: IPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 35 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD26N06S2L-35 PG-TO252-3-11 2N06L35 726-IPD26N06S2L-35 2N06L35 2N06L v5856 GS6010 PCB REV 3.5 IPD26N06S2L-35 2N06L3 PDF

    2n06l35

    Abstract: transistor 2N06L35 D26A 2N06L3 BSPD26N06S2L-35 INFINEON PART MARKING to252 SPD26N06S2L-35
    Text: SPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 35 m ID 30 A P- TO252 -3-11 Type Package Ordering Code Marking SPD26N06S2L-35


    Original     		SPD26N06S2L-35 Q67060-S7426 2N06L35 BSPD26N06S2L-35, SPD26N06S2L-35 2n06l35 transistor 2N06L35 D26A 2N06L3 BSPD26N06S2L-35 INFINEON PART MARKING to252 PDF

    IPG20N06S2L-35

    Abstract: 2N06L35 transistor 2N06L35 IPG20N06S2L-35 application note PG-TDSON-8-4 DD44
    Text: IPG20N06S2L-35 OptiMOS Power-Transistor Product Summary V DS 55 V R DS on ,max4) 35 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPG20N06S2L-35 2N06L35 IPG20N06S2L-35 2N06L35 transistor 2N06L35 IPG20N06S2L-35 application note PG-TDSON-8-4 DD44 PDF

    2N06L35

    Abstract: P-TO252-3-11 transistor 2N06L35 BSPD26N06S2L-35 SPD26N06S2L-35 26APulsed PTO252-3-11 2N06L3
    Text: SPD26N06S2L-35 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 35 m ID 26 A P-TO-252-3-11 P-TO252-3-11 Type Package


    Original     		SPD26N06S2L-35 P-TO-252-3-11 P-TO252-3-11 P-TO-252-3-11 Q67060-S7426 2N06L35 BSPD26N06S2L-35, SPD26N06S2L-35 2N06L35 P-TO252-3-11 transistor 2N06L35 BSPD26N06S2L-35 26APulsed PTO252-3-11 2N06L3 PDF