TRANSISTOR 2N 4401
Abstract: transistor 4400 4401 transistor 2N4400 2N4401 4401 NPN 4401 transistor transistor 2n transistor 4401
Text: HN/2N 4400/4401 NPN EPITAXIAL SILICON TRANSISTOR General purpose transistor Collector Emitter Voltage: VCE0 = 40V Collector Dissipation: Pc max = 625mW On special request, these transistors can be manufactured in different pin configurations. Please refer to the “TO-92
|
OCR Scan
|
625mW
TRANSISTOR 2N 4401
transistor 4400
4401 transistor
2N4400
2N4401
4401
NPN 4401 transistor
transistor 2n
transistor 4401
|
PDF
|
2N4401 surface mount
Abstract: No abstract text available
Text: 2N4401 NPN SMALL SIGNAL TRANSISTOR Features • Epitaxial Planar Die Construction • Available in both Through-Hole and Surface Mount Packages Suitable for Switching and Amplifier Applications Complementary PNP Type Available 2N 4403 • • H-e -H h - M
|
OCR Scan
|
2N4401
IL-STD-202,
150mA,
300ns,
DS11103
2N4401 surface mount
|
PDF
|
2n4401
Abstract: TRANSISTOR 2N 4401 "cb it" 4400 transistor transistor 4400
Text: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: Veto=40V • Collector Dissipation: pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (T,=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage
|
OCR Scan
|
2N4400/4401
625mW
2N4401
lc50mA,
500mA,
100MHz
--100MHz
150mA
TRANSISTOR 2N 4401
"cb it"
4400 transistor
transistor 4400
|
PDF
|
TRANSISTOR 2N 4401
Abstract: No abstract text available
Text: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Em itter Voltage: VCEo=40V TO-92 • Collector D issipation: P c max =625mW ABSOLUTE MAXIMUM RATINGS (T,=25°C) Characteristic Sym bol Rating Unit Collector-Base Voltage
|
OCR Scan
|
2N4400/4401
625mW
002SQ27
00SS02Ã
TRANSISTOR 2N 4401
|
PDF
|
TRANSISTOR 2N 4401
Abstract: 2n4401
Text: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V c eo = 4 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage
|
OCR Scan
|
2N4400/4401
625mW
100MHz
100MHz
TRANSISTOR 2N 4401
2n4401
|
PDF
|
2N4401
Abstract: 2N4400 2N4401 transistor 2N4401 - TRANSISTOR
Text: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V c eo = 4 0 V * Collector Dissipation: P c max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Em itter Voltage
|
OCR Scan
|
2N4400/4401
625mW
100MA,
002S0H6
2N4401
2N4400
2N4401 transistor
2N4401 - TRANSISTOR
|
PDF
|
transistor c 4236
Abstract: K 3053 TRANSISTOR eco 4234 transistor 2N 4236 2N4141 08/bup 3110 transistor
Text: 6091788 MICRO ELECTRONICS CORP-u 82D 00664 P AS DEI bD^lTflö □□□Qbb4 ñ I ^ POLARITY Medium Power Amplifiers and Switches TYPE NO. M AXIM U M RATINGS V CE SAT FE CASE Pd (mW) 'c (A) V CEO (V) min max 'c Im A) V CE (V) max (V) 'c fT min (A) (MHz)
|
OCR Scan
|
O-106
O-92A
transistor c 4236
K 3053 TRANSISTOR
eco 4234
transistor 2N 4236
2N4141
08/bup 3110 transistor
|
PDF
|
transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
|
OCR Scan
|
AN-134
transistor c2060
Transistor Shortform Datasheet & Cross References
1N4465
C1906 transistor
Germanium itt
3N58
IN939
MC1230F
2N3866 MOTOROLA
C943 transistor
|
PDF
|
TRANSISTOR 2N 4401
Abstract: NEC 2N4400 2n4401
Text: NEC NPN SILICON TRANSISTORS ELECTRON DEVICE 2N4400,2N4401 GENERAL PURPOSE SWITCHING AND AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION 2N4400, 2N4401 are NPN transistors, designed for general purpose switching and amplifier applications, feature injection-molded plastic package for high reliability.
|
OCR Scan
|
2N4400
2N4401
2N4400,
2N4401
625mW
300at
150mA
2N4401)
2N4402,
2N4403
TRANSISTOR 2N 4401
NEC 2N4400
|
PDF
|
Y3 SOT23
Abstract: SOT23 MARK Y3 TRANSISTOR 2N 4401 2n4401 2n4401 cross W3 marking SOT-223
Text: 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 SOT-23 E B Mark: 2X NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
2N4401
MMBT4401
2N4401
OT-23
2N4401RM
2N4401RA
O-92-3
AN-9006:
Y3 SOT23
SOT23 MARK Y3
TRANSISTOR 2N 4401
2n4401 cross
W3 marking SOT-223
|
PDF
|
2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
|
OCR Scan
|
2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
|
PDF
|
BF195 equivalent
Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Text: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products
|
OCR Scan
|
|
PDF
|
IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
|
OCR Scan
|
|
PDF
|
1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
|
OCR Scan
|
|
PDF
|
|
sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
|
OCR Scan
|
|
PDF
|
triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
|
OCR Scan
|
SG73/D
triac zd 607
1n5204
CA2820 TRW
2N4427 equivalent bfr91
2N6823
842 317 SO8
BD243 PINOUT
BD529
bf506
BF845
|
PDF
|
transistors BC 557C
Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and
|
OCR Scan
|
|
PDF
|
MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
|
OCR Scan
|
|
PDF
|
Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
|
OCR Scan
|
|
PDF
|
ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
|
OCR Scan
|
CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
|
PDF
|
triac zd 607
Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published
|
OCR Scan
|
thT404
ZV15A
ZY33A
ZT696
ZV15B
ZY33B
ZT697
ZT706
ZV27A
ZY62A
triac zd 607
hep c6004
2sb504
2SC 968 NPN Transistor
sje 607
motorola c6004
diode BY127 specifications
K872
af118
Motorola Semiconductor hep c3806p
|
PDF
|
TRANSISTOR 2N 4401
Abstract: transistor 2n4401 2N4401 2N4401 - TRANSISTOR
Text: 2N4401 TO - 92 BIPOLAR TRANSISTORS TRANSISTOR NPN min. 0.49 (12.5) 0.18 (4.6) * Power dissipation O PCM: 0.6 W(Tamb=25 C) * Collector current ICM: 0.6 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC
|
Original
|
2N4401
-55OC
150OC
MIL-STD-202E
TRANSISTOR 2N 4401
transistor 2n4401
2N4401
2N4401 - TRANSISTOR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Transistors UMT4401 / SST4401 / MMST4401 /2N4401 NPN Medium Power Transistor Switching I UMT4401 /SST4401 /MMST4401 /2N4401 •Features •E xternal dimensions (Units : mm) 1 ) BV ceo< 40V (lc = 1 m A ) 2 ) Complements the UMT4403/SST4403/MMST4403/PN4403
|
OCR Scan
|
UMT4401
SST4401
MMST4401
/2N4401
/SST4401
/MMST4401
UMT4403/SST4403/MMST4403/PN4403
T4401
|
PDF
|
KT 819 transistor
Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e
|
OCR Scan
|
|
PDF
|