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    TRANSISTOR 2N 3906 18 Search Results

    TRANSISTOR 2N 3906 18 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2N 3906 18 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    7660 harris

    Abstract: transistor 2n 3906 -338 2N3906 MAX850 SOIC-16 TQ9142 TQ9142B rf power amplifier 850 MHZ Dual PNP Transistor diode 824
    Text: T R I Q U I N T S E M I C O N D U C T O R , I N C . WIRELESS COMMUNICATIONS TQ9142B VD2 TQ9142 VD3 ZO = 50Ω RF OUT RF IN VG1 VG2 VG3 High-Efficiency 3-Stage AMPS Power Amplifier IC GND The TQ9142B is a highly efficient 3-stage power amplifier developed for handsets and


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    TQ9142B TQ9142 TQ9142B 7660 harris transistor 2n 3906 -338 2N3906 MAX850 SOIC-16 TQ9142 rf power amplifier 850 MHZ Dual PNP Transistor diode 824 PDF

    transistor bel 187

    Abstract: bel 187 transistor of bel 187 transistor configuration bel 187 transistor BEL 187 transistor current gain 2N3906BU fairchild 2N3906BU 2N3906RA 2N3906 pnp transistor 2n 3906
    Text: MMBT3906 PZT3906 C C E E C B C TO-92 E SOT-23 B B SOT-223 Mark: 2A PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    2N3906 MMBT3906 PZT3906 2N3906 MMBT3906 OT-23 OT-223 O-92-3 transistor bel 187 bel 187 transistor of bel 187 transistor configuration bel 187 transistor BEL 187 transistor current gain 2N3906BU fairchild 2N3906BU 2N3906RA pnp transistor 2n 3906 PDF

    2n2646 ujt

    Abstract: applications of ujt with circuits applications of ujt UJT 2N2646 2N2646 TO-92 UJT 2N4870 UJT 2N2646 oscillators of UJT 2N2646 ujt transistor UJT 2N2646 RANGE
    Text: THOflSON/ DISTRIBUTOR SflE D • T0ELiA73 □□□573û ÛTE B i TCSK Discrete Transistors PNP Signal Transistor Selector Guide ■c Max. mA v (BR)CEO (Min.) V 2N 6076 2 N 4126 2N 4125 2N 3905 2N 3906 -1 0 0 -2 0 0 -2 0 0 -2 0 0 -2 0 0 -2 5 -2 5 -3 0 -4 0


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    2N6076 MPS2907A 2N4126 MPS-A55 2N4125 MPS-A56 2N3905 MPS-A93 2N3906 MPS-A92 2n2646 ujt applications of ujt with circuits applications of ujt UJT 2N2646 2N2646 TO-92 UJT 2N4870 UJT 2N2646 oscillators of UJT 2N2646 ujt transistor UJT 2N2646 RANGE PDF

    t1d6

    Abstract: PN3906 t1d6 transistor RXT3904 SST3904 UMT3904 SPEC-C37 r1a transistor 2N3904 MMST3904
    Text: Transistors I NPN General Purpose Transistor UM T3904/SST3904/M M S T3904/R XT3904/2N 3904 • F e a tu re s • E x te r n a l d im e n s io n s U n its : m m 1 ) B V ceo < 4 0 V (lc = 1 m A > 2 ) C o m p le m e n ts th e U M T 3 9 0 6 /S S T 3 9 0 6 /M M S T 3 9 0 6 /R X T 3 9 0 6 /P N 3906.


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    UMT3904/SST3904/MMST3904/RXT3904/2N3904 UMT3906/SST3906/MMST3906/RXT3906/PN3906 UMT3904 SST3904 V1MST3904 RXT3904 2N3904 t1d6 PN3906 t1d6 transistor SPEC-C37 r1a transistor 2N3904 MMST3904 PDF

    transistor pnp 3906

    Abstract: transistor c 3906 transistor 3906 3906 pnp transistor 2n 3906 Transistor 2n 3906 18 3906 2n 2N3906 3906 pnp 3906 TRANSISTOR
    Text: 2N3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Emitter Voltage: Veto* 40V • Collector DiMipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Sym bol Characteristic Collector-Base Voltage Collector-Emitter Voltage


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    2N3905/3906 625mW 2N3906 transistor pnp 3906 transistor c 3906 transistor 3906 3906 pnp transistor 2n 3906 Transistor 2n 3906 18 3906 2n 3906 pnp 3906 TRANSISTOR PDF

    transistor Bc 540

    Abstract: transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    BCW94 transistor Bc 540 transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310 PDF

    BC 540 TRANSISTOR

    Abstract: transistor Bc 540 NPN transistor 2n 3904 transistor 2N 3904 2907pn NPN transistor 2n 3906 2N3702P 2N 3904 transistor transistor 2n 2N3415
    Text: general purpose transistors — plastic case transistors usage général — boîtier plastique Type NPN M ax im u m ratings PIMP Ptot Characteristics at 25 °C VcEO h21E min 2N 3414 2 N 3 4 15 2N 3416 2 N 3 4 17 2N 2N 2N 2N 2N 3707 3708 3709 3710 3711 10/


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    2N3415 2N3711 30duit BC 540 TRANSISTOR transistor Bc 540 NPN transistor 2n 3904 transistor 2N 3904 2907pn NPN transistor 2n 3906 2N3702P 2N 3904 transistor transistor 2n PDF

    NPN switching transistor 2N4403

    Abstract: NPN transistor 2n 3904 transistor 2N 3904 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device b v CEO Type @ 1 0 m A - V Min. V CE(sat) E Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N 4 1 24


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    2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 150mA, NPN switching transistor 2N4403 NPN transistor 2n 3904 transistor 2N 3904 PDF

    n3904

    Abstract: NPN transistor 2n 3904 NPN switching transistor 2N4403 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device b v CEO Type @ 1 0 m A - V Min. V CE(sat) E M ax. @ l c (m A) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N 4 1 24


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    2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 -150mA, n3904 NPN transistor 2n 3904 NPN switching transistor 2N4403 PDF

    BCM 4359

    Abstract: transistor 4287 AB transistor 3901
    Text: 6091788 MICRO ELECTRONICS CORJP_ ña 82D 006^8 DEI bCm 7flfl D 7^* D 0 0 Gb 4 fl □ "7 J " TYPE V C E SA T FE C ASE Pd (mW) 'c (mA) V CEO (V) min max 'c (mA) max (V) ‘c (mA) fT min (MHz) Cob N.F. max max (pF) (dB) 3694 4249 4250 5138 N P P P T O -92A


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    O-237 MELF-002, MELF006 L0T17aa O-181LOW BCM 4359 transistor 4287 AB transistor 3901 PDF

    MPQ3906

    Abstract: pq3906
    Text: MAXIMUM RATINGS Rating C o lle cto r-E m itte r V o ltage Symbol Value Unit v CEO - 40 Vdc Vdc Vdc C ollector-Base Voltage v CBO _40 Em itter-Base V o ltage v EBO - 5.0 C o lle ctor C u rrent — C ontinuous 200 'c T otal Device D issipation Cai T a = 25°C


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    MPQ3906* O-116 PQ3906 1N916" MPQ3906 pq3906 PDF

    2N4401 die

    Abstract: dtc 22k 47k rohm "digital transistor" sst 2222A EQUIVALENT transistor digital 47k 22k PNP NPN TR 3906 PNP SM DTA214Y transistor digital 4.7k 4.7k PNP dta eel -16 sl 5510-1
    Text: Digital Transistors M APPLICATION: • Inverter , Driver & Interface C ircuits • FEATURES: • • • • Replaces up to three parts 1 transistor & 2 resistors w ith one part Available in a variety o f surface m ount or leaded (th ru -h o le ) packages


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    100mA 2N4401 die dtc 22k 47k rohm "digital transistor" sst 2222A EQUIVALENT transistor digital 47k 22k PNP NPN TR 3906 PNP SM DTA214Y transistor digital 4.7k 4.7k PNP dta eel -16 sl 5510-1 PDF

    lm 3904

    Abstract: 2N3904 T T3904 SST3904 ST3904 2n390 2N3904TA UMT3904 RXT3904 2N3904
    Text: Transistors I NPN General Purpose Transistor UMT3904/SST3904/MMST3904/RXT3904/2N3904 •F eatures •External dimensions Units : mm 1 ) B V ceo < 4 0 V (lo— 1mA) 2 ) Com plem ents the UM T3906/SST3906/M M ST3906/RXT3906/PN 3906 •Package, marking and packaging specifications


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    T3906/SST3906/M ST3906/RXT3906/PN UMT3904/SST3904/MMST3904/RXT3904/2N3904 T3904 ST3904 RXT3904 T3904, UMT3904 SST3904 MMST3904 lm 3904 2N3904 T 2n390 2N3904TA 2N3904 PDF

    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


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    Untitled

    Abstract: No abstract text available
    Text: E Comlinear Corporation Overdrive-Protected Wideband Op Amp CLC20 I APPLICATIONS: FEATURES: • • • • • • • • • • • • • fast, precision A /D conversion automatic test equipment input/output amplifiers .photodiode, CCD preamps IF processors


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    CLC20 170MHz 570mW CLC205 PDF

    TRANSISTOR MARKING CODE R2A

    Abstract: SST3905 PN3904 RXT3906 2N3906 UMT3906 a3s marking SPEC-A38 MMST3906 T100
    Text: Transistors i PNP General Purpose Transistor UMT3906/SST3906/MMST3906/RXT3906/2N3906 •F e a tu r e s 1 BV ceo< —40V lc = — 1mA) 2 ) Complements the UMT3904/SST3904/MMST3904/RXT3904/PN3904. •E x te r n a l di mansions (Units : mm) UMT3906 •P a c k a g e , marking and packaging specifications


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    UMT3906/SST3906/MMST3906/RXT3906/2N3906 UMT3904/SST3904/MMST3904/RXT3904/PN3904. UMT3906 UMT3906 SST390B MMST3906 RXT3906 2N3906 TRANSISTOR MARKING CODE R2A SST3905 PN3904 2N3906 a3s marking SPEC-A38 T100 PDF

    Transistors specification with hybrid

    Abstract: TRANSISTOR MARKING CODE R2A UMT3906 PN3904 2N3906 MMST3906 SST3906 T106 T10D T116
    Text: Transistors PNP General Purpose Transistor I U MT3906/SST3906/M M ST3906/RXT3906/2N3906 •Features 1 BVceo< - 4 0 V le— 1mA) 2 ) Complements the UMT3904/SST3904/MMST3904/RXT3904/PN3904. # External dimensions (Units : mm) U M T3906 •P ackage, marking and packaging specifications


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    UMT3906/SST3906/MMST3906/RXT3906/2N3906 UMT3904/SST3904/MMST3904/RXT3904/PN3904. UM13906 SST3906 MMST3906 BXT3906 2N3906 UMT3906 O-220FP O-220 Transistors specification with hybrid TRANSISTOR MARKING CODE R2A UMT3906 PN3904 2N3906 T106 T10D T116 PDF

    JE170

    Abstract: No abstract text available
    Text: Overdrive-Protected Wideband Op Amp APPLICATIONS: FEATURES: • • • • • • • • • • • • • • fast, precision A/D conversion automatic test equipment input/output amplifiers photodiode, CCD preamps IF processors high-speed modems, radios


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    CLC206 180MHz 70MHz 20VPP) CLC206 100mA) 100mA. JE170 PDF

    Untitled

    Abstract: No abstract text available
    Text: MP8780 CMOS 8-Bit Video Analog-to-Digital Converter JTE X A R March 1998-3 FEATURES BENEFITS 15 MHz Input Bandwidth -0.3 dB SNR > 44 dB @ Fin 2.4 MHz 1.2 to 5.0 Volts (Peak to Peak) Input Range 1/2 LSB Dynamic DNL at 14.4 MHz 3/4 LSB Dynamic DNL at 17.7 MHz


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    MP8780 MP8780 34E2blfl PDF

    HP5082-2835 diode

    Abstract: HP5082-2835 transistor 2SC 826 data FREE sync stripper 1N4148 2N3903 2N3904 2N3905 MP8780 MP8780JN
    Text: MP8780 ^ CMOS 8-Bit Video Analog-to-Digital Converter » C Y / I O March 1998-3 FEATURES BENEFITS • • • • • • • • • Optimized Combination of Performance, Power, Packaging and Cost for Video Digitizing Applications 15 MHz Input Bandwidth -0.3 dB


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    MP8780 MP8780 3422fe 34EEblfl 000777b HP5082-2835 diode HP5082-2835 transistor 2SC 826 data FREE sync stripper 1N4148 2N3903 2N3904 2N3905 MP8780JN PDF

    Untitled

    Abstract: No abstract text available
    Text: c Overdrive-Protected Wideband Op Amp i. -i- • ir „H i APPLICATIONS: FEATURES: • • • • • • • • • • • • • fast, precision A /D conversion automatic test equipment input/o u tp u t amplifiers photodiode, CCD preamps IF processors


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    LC205 170MHz 570mW CLC205 PDF

    TRANSISTOR tip122 CHN 949

    Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
    Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.


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    38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175 PDF

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175 PDF

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


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