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    TRANSISTOR 2A SOT23 Search Results

    TRANSISTOR 2A SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2A SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter


    Original     		PDF OT-23 MMBT3906LT1 MMBT3904LT1 -10mA -50mA 100MHz -10mA

    MMBT3904 jiangsu

    Abstract: MMBT3904 MMBT3906 MMBT3906 SOT-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 SOT–23 TRANSISTOR PNP FEATURES z Complementary Type The NPN Transistor MMBT3904 is Recommended z Epitaxial Planar Die Construction MARKING: 2A 1. BASE 2. EMITTER


    Original     		PDF OT-23 MMBT3906 MMBT3904 MMBT3904 jiangsu MMBT3906 MMBT3906 SOT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR PNP SOT-23 FEATURES z As complementary type the NPN transistor MMBT3904 is recommended z Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER


    Original     		PDF OT-23 MMBT3906 OT-23 MMBT3904 -10mA -50mA -100mA -50mA, -10mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		PDF OT-23 MMBT3906LT1 MMBT3904LT1 -10mA -50mA 100MHz -10mA

    ZXT10P40DE6

    Abstract: ZXT10P40DE6TA ZXT10P40DE6TC MARKING 720 NS435 DSA0037441
    Text: ZXT10P40DE6 SuperSOT 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 105m ; IC= -2A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		PDF ZXT10P40DE6 OT23-6 OT23-6 ZXT10P40DE6 ZXT10P40DE6TA ZXT10P40DE6TC MARKING 720 NS435 DSA0037441

    SMD TRANSISTOR MARKING 2A pnp

    Abstract: MARKING SMD TRANSISTOR P CMBT3906 MARKING SMD PNP TRANSISTOR 2a
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE


    Original     		PDF ISO/TS16949 OT-23 CMBT3906 C-120 SMD TRANSISTOR MARKING 2A pnp MARKING SMD TRANSISTOR P CMBT3906 MARKING SMD PNP TRANSISTOR 2a

    Marking 2A

    Abstract: 2a transistor sot 23 MMBT3906 SOT-23 SOT-23 2A 2A marking MMBT3906 transistor SOT23 2A MMBT3906 sot-23 2A transistor 2A MARKING SOT23
    Text: MMBT3906 SOT-23 Transistor PNP 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features — As complementary type, the NPN transistor MMBT3904 is Recommended — Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF MMBT3906 OT-23 OT-23 MMBT3904 -10mA -50mA -100mA -50mA, -10mA, 100MHz Marking 2A 2a transistor sot 23 MMBT3906 SOT-23 SOT-23 2A 2A marking MMBT3906 transistor SOT23 2A MMBT3906 sot-23 2A transistor 2A MARKING SOT23

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A


    Original     		PDF OT-23 CMBT3906 C-120

    SMD TRANSISTOR MARKING 2A pnp

    Abstract: CMBT3906
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF OT-23 CMBT3906 C-120 SMD TRANSISTOR MARKING 2A pnp CMBT3906

    MMBT8550

    Abstract: No abstract text available
    Text: MMBT8550 2A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. SOT-23 Plastic Package


    Original     		PDF MMBT8550 OT-23 MMBT8550

    MMBT8050

    Abstract: MMBT8050 BR mmbt8050 sot-23
    Text: MMBT8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. SOT-23 Plastic Package


    Original     		PDF MMBT8050 OT-23 MMBT8050 MMBT8050 BR mmbt8050 sot-23

    KST3906

    Abstract: WH*s
    Text: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage


    Original     		PDF KST3906 OT-23 KST3906 WH*s

    Untitled

    Abstract: No abstract text available
    Text: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage


    Original     		PDF KST3906 OT-23

    Untitled

    Abstract: No abstract text available
    Text: ZXT10P40DE6 SuperSOT 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUM M ARY V CEO=-40V; RSAT = 105m ; IC= -2A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex m atrix structure com bined w ith advanced assem bly techniques to give


    Original     		PDF ZXT10P40DE6 OT23-6

    Untitled

    Abstract: No abstract text available
    Text: “SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR FMMT634 ISSUE 1 – APRIL 97 FEATURES * 625mW POWER DISSIPATION * Highest current capability SOT23 Darlington * Very high hFE - specified at 2A 5K minimum - typically 600 at 5A COMPLEMENTARY TYPE – FMMT734


    Original     		PDF FMMT634 625mW FMMT734 100mA 100us

    ZXTN19100CFF

    Abstract: TS16949 ZXTP19100CFF ZXTP19100CFFTA
    Text: ZXTP19100CFF 100V, SOT23F, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -2A VCE(sat) < 120mV @ 1A RCE(sat) = 95m⍀ PD = 1.5W Complementary part number: ZXTN19100CFF Description C Packaged in the SOT23 outline this new low saturation 100V PNP


    Original     		PDF ZXTP19100CFF OT23F, -100V 120mV ZXTN19100CFF D-81541 ZXTN19100CFF TS16949 ZXTP19100CFF ZXTP19100CFFTA

    Untitled

    Abstract: No abstract text available
    Text: ZXTP19100CFF 100V, SOT23F, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -2A VCE(sat) < 120mV @ 1A RCE(sat) = 95m⍀ PD = 1.5W Complementary part number: ZXTN19100CFF Description C Packaged in the SOT23 outline this new low saturation 100V PNP


    Original     		PDF ZXTP19100CFF OT23F, -100V 120mV ZXTN19100CFF D-81541

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT493 100V NPN MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > 100V   IC = 1A High Continuous Collector Current  Case material: Molded Plastic. “Green” Molding Compound.  ICM = 2A Peak Pulse Current


    Original     		PDF FMMT493 500mW J-STD-020 FMMT593 MILSTD-202, DS33093

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT591 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > -60V   IC = -1A High Continuous Collector Current  Case Material: molded plastic, “Green” Molding Compound  ICM = -2A Peak Pulse Current


    Original     		PDF FMMT591 J-STD-020 FMMT491 AEC-Q101 DS33104

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT494 120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data • • • • • • • • • • • • • • BVCEO > 120V IC = 1A Continuous Collector Current ICM = 2A Peak Pulse Current


    Original     		PDF FMMT494 500mW AEC-Q101 J-STD-020 MIL-STD-202, DS33095

    Untitled

    Abstract: No abstract text available
    Text: DSS20200L 20V PNP LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > -20V • • IC = -2A Continuous Collector Current • • ICM = -4A Peak Pulse Current Case: SOT23 Case Material: molded plastic, “Green” molding compound UL Flammability Classification Rating 94V-0


    Original     		PDF DSS20200L -120mV DSS20201L AEC-Q101 J-STD-020 DS31604

    all diodes ratings

    Abstract: FMMT619TA SOT23 marking 619 marking 619 sot23 marking 619 FMMT619 led driver sot-23
    Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • VCEO > 50V IC cont = 2A 625mW Power dissipation Low Equivalent On Resistance


    Original     		PDF FMMT619 625mW OT-23 J-STD-020 DS33236 all diodes ratings FMMT619TA SOT23 marking 619 marking 619 sot23 marking 619 FMMT619 led driver sot-23

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT491 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data • BVCEO > 60V • • IC = 1A Continuous Collector Current • • ICM = 2A Peak Pulse Current Case: SOT23 Case Material: molded plastic, “Green” molding compound


    Original     		PDF FMMT491 500mW FMMT591 AEC-Q101 DS33091

    PPAP

    Abstract: FMMT495 FMMT495TA
    Text: A Product Line of Diodes Incorporated FMMT495 150V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data • • • • • • • • • • • • • • BVCEO > 150V IC = 1A Continuous Collector Current ICM = 2A Peak Pulse Current


    Original     		PDF FMMT495 500mW AEC-Q101 J-STD-020 MIL-STD-202, DS33096 PPAP FMMT495 FMMT495TA