MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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Untitled
Abstract: No abstract text available
Text: 2731-20R1 2731-20 20Watts, 36 Volts, 100us, 10% Radar 2700-3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55KCR-1 Common Base The 2731-20is an internally matched, COMMON BASE bipolar transistor capable of providing 20Watts of pulsed RF output power at 100 pulse width,
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2731-20R1
20Watts,
100us,
55KCR-1
2731-20is
20Watts
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j378
Abstract: duroid 6010 breakdown voltage 2731-100M 100 watts transistor s-band transistor d1 391 J382 transistor frequency 30GHz gain 20 dB
Text: 2731-100MR1 2731-100M 100 Watts, 36 Volts, 250µs, 10% Radar 2700-3100 MHz CASE OUTLINE 55KS-1 Common Base GENERAL DESCRIPTION The 2731-100M is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts of pulsed RF output power at 250µs pulse
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2731-100MR1
2731-100M
55KS-1
2731-100M
2200uF
j378
duroid 6010 breakdown voltage
100 watts transistor s-band
transistor d1 391
J382
transistor frequency 30GHz gain 20 dB
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2731-100M
Abstract: 100 watts transistor s-band transistor frequency 30GHz gain 20 dB
Text: 2731-100MR3 2731-100M 100 Watts, 36 Volts, 200µs, 10% Radar 2700-3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55KS-1 Common Base The 2731-100M is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts of pulsed RF output power at 200µs pulse
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2731-100MR3
2731-100M
55KS-1
2731-100M
000pF
100pF
2200uF
25Mil,
100 watts transistor s-band
transistor frequency 30GHz gain 20 dB
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2731GN-200M
Abstract: 2731GN power transistor gan s-band J6 transistor Gan transistor j374
Text: 2731GN-200M Rev 1 2731GN – 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF
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2731GN-200M
2731GN
55-QP
2731GN
power transistor gan s-band
J6 transistor
Gan transistor
j374
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TRANSISTOR JC 515
Abstract: No abstract text available
Text: 2731-115MR1 2731-115M 115 Watts, 36 Volts, 200µs, 10% Radar 2700-3100 MHz Preliminary Data GENERAL DESCRIPTION CASE OUTLINE 55KS-1 Common Base The 2731-115M is an internally matched, COMMON BASE bipolar transistor capable of providing 115 Watts of pulsed RF output power at 200µs pulse
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2731-115MR1
2731-115M
55KS-1
2731-115M
TRANSISTOR JC 515
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2731GN
Abstract: No abstract text available
Text: 2731GN-110M Rev 1 2731GN – 110M 110 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-110M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 110 Watts of pulsed RF
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2731GN-110M
2731GN
55-QP
2731GN
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2731GN
Abstract: No abstract text available
Text: 2731GN-200M Rev 1 2731GN – 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF
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2731GN-200M
2731GN
55-QP
55-QP
2731GN
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B W4 Transistor
Abstract: transistor hemt TRANSISTOR W2 Stanford Microdevices 4 ghz
Text: Product Description SMW Series Stanford Microdevices’ SMW Series are high performance GaAs High Electron Mobility Transistor HEMT MMICs housed in thermally-efficient ceramic packages. These HEMT MMICs are fabricated using molecular beam epitaxial growth
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 2, 10/2008 MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with fre-
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MRF6P3300H
MRF6P3300HR3/HR5
MRFE6P3300HR3/HR5.
PCN12895
MRF6P3300HR3
MRF6P3300HR5
MRF6P3300HR3
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circuit drawing of digital multimeter
Abstract: transistor 9009 magnetic BUZZER CIRCUIT 12NP135B Buzzer buzzer circuit transistor 2731
Text: Hy-Q International MAGNETIC BUZZER MODEL 12NP135B 6.3 ±0.2 6.0 ±0.2 5.5 ±0.2 Ø0.6 x 2 + _ 13.7 ±0.3 0.5 ±0.2 Ø12.0 ±0.3 6.5 ±0.3 7.5 ±0.3 RECOMMENDED DRIVING CIRCUIT +V Rated Voltage SIGNAL PNP Transistor RESONANT FREQUENCY, 1/2 DUTY CYCLE, SQUARE WAVE.
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12NP135B
10kHz
circuit drawing of digital multimeter
transistor 9009
magnetic BUZZER CIRCUIT
12NP135B
Buzzer
buzzer circuit
transistor 2731
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UT-141C-50-SP
Abstract: 141c DVB-T Schematic ATC600S150FT250XT NIPPON CAPACITORS UT-141A-TP COAX AN1955 JESD22-A114 MRF6P3300H
Text: Document Number: MRF6P3300H Rev. 2, 10/2008 Freescale Semiconductor Technical Data MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. MRF6P3300HR3 MRF6P3300HR5 RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with fre-
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MRF6P3300H
MRF6P3300HR3/HR5
MRFE6P3300HR3/HR5.
PCN12895
MRF6P3300HR3
MRF6P3300HR5
MRF6P3300HR3
UT-141C-50-SP
141c
DVB-T Schematic
ATC600S150FT250XT
NIPPON CAPACITORS
UT-141A-TP
COAX
AN1955
JESD22-A114
MRF6P3300H
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MUN2111T1
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its
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MUN2111T1
SC-59
MUN2111T1
MUN2114T1
b3b7255
001350b
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UN2115T
Abstract: transistor 6J U 2113t1 MUN2111T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias R esistor Transistor MUN2111T1 SER IES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network M o to rola Preferred D e v ice s This new series of digital transistors is designed to replace a single device and its
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SC-59
MUN2111T1
MUN2114T1
UN2115T
transistor 6J U
2113t1
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Untitled
Abstract: No abstract text available
Text: Product Description SMW Series Stanford M icrodevices’ SM W Series are high performance GaAs High Electron Mobility Transistor HEMT MMICs housed in therm ally-efficient ceram ic packages. These HEMT MMICs are fabricated using m olecular beam epitaxial growth
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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Untitled
Abstract: No abstract text available
Text: Product Description SMW Series Stanford M icrodevices’ SM W Series are high performance GaAs High Electron Mobility Transistor HEMT MMICs housed in therm ally-efficient ceram ic packages. These HEMT MMICs are fabricated using m olecular beam epitaxial growth
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2PHX11136Q-17
Motorola transistors MRF 947
trimpots 3296
transistor C5386
1n4740
2N5591 Motorola
2N5688
CQ 542 Transistor npn motorola
equivalent transistor of 2sc3358
HB215/D
ic cd 2399 gp
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RF power amplifier MHz
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor . . . designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak
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MRF10500
376B-0erial
MRF10150
RF power amplifier MHz
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d2396
Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Text: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .
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2SK2503
RK7002
TC363TS
DTC314TS
TC114G
100mA
TA124G
DTC144G
d2396
TRANSISTOR PNP B1443
D2396 equivalent
B1569A
TRANSISTORS PNP 50 V 1 A B1443
B1186A
transistor c5147
b1344
transistor equivalent b1443
K2460
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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MRF547
Abstract: MRF549
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line PNP S ilicon High Frequency T ransisto r 1C = -600m A HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR PNP SILICON . . . desig n ed fo r h ig h -cu rre n t, h ig h -fre q u e n cy c o m m o n base a m p lifie rs used in m e diu m
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MRF549
-600m
MRF547
MRF547
MRF549
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Untitled
Abstract: No abstract text available
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode The M R F 5 0 0 3 is d e s ig n e d fo r b ro a d b a n d c o m m e rc ia l and in d u s tria l a p p lic a tio n s at fre q u e n c ie s to 520 M H z. The high gain and bro a d b a n d
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MRF5003
AN215A,
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