TRANSISTOR 25 Search Results

TRANSISTOR 25 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 25 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
Untitled Abstract: No abstract text available Text: UTC TIP31C NPN EXPITAXIAL PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP31C is a NPN expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. 1 FEATURE *Complement to tip32C TO-251	Original	TIP31C TIP31C tip32C O-251 Stor1000 QW-R213-005	PDF
369D Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic	Original	BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105	PDF
Untitled Abstract: No abstract text available Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic	Original	BUD42D D42DG BUD42D/D	PDF
Untitled Abstract: No abstract text available Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic	Original	BUD42D BUD42D BUD42D/D	PDF
369D Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic	Original	BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG	PDF
Untitled Abstract: No abstract text available Text: UTC TIP31C NPN EXPITAXIAL PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP31C is a NPN expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. 1 FEATURE *Complement to tip32C TO-251	Original	TIP31C TIP31C tip32C O-251 QW-R213-005	PDF
2SB1412 Abstract: 2SB1412L-TN3-F-R 2SB1412-TN3-F-R Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. 1 TO-252 FEATURES Excellent DC current gain characteristics Low VCE SAT	Original	2SB1412 2SB1412 O-252 2SB1412L 2SB1412-TN3-F-R 2SB1412L-TN3-F-R QW-R209-021 2SB1412L-TN3-F-R 2SB1412-TN3-F-R	PDF
2FK transistor Abstract: No abstract text available Text: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units	Original	MMBT2907AK MMBT2907AK OT-23 2FK transistor	PDF
Untitled Abstract: No abstract text available Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units	Original	MMBT3904K MMBT3904K OT-23	PDF
SOT-23 2xk Abstract: 2xk transistor npn Text: MMBT4401K NPN Epitaxial Silicon Transistor MMBT4401K NPN Epitaxial Silicon Transistor Switching Transistor Marking 3 2XK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO	Original	MMBT4401K MMBT4401K OT-23 SOT-23 2xk 2xk transistor npn	PDF
d1708 Abstract: 2SC4346 2SC4346-Z Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4346,4346-Z NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING ORDERING INFORMATION DESCRIPTION The 2SC4346 is a mold power transistor developed for PART NUMBER PACKAGE 2SC4346 TO-251 MP-3	Original	2SC4346 4346-Z 2SC4346 O-251 2SC4346-Z O-252 d1708 2SC4346-Z	PDF
TIP41C Abstract: TIP42C TIP42CL TIP42C-TA3-T TIP42C-TN3-R TIP42C-TN3-T hFE is transistor to220 Text: UNISONIC TECHNOLOGIES CO., LTD TIP42C PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR 1 DESCRIPTION TO-220 The UTC TIP42C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURES 1 TO - 252	Original	TIP42C O-220 TIP42C TIP41C TIP42CL TIP42C-TA3-T TIP42CL-TA3-T TIP42C-TN3-R TIP42CL-TN3-R TIP42C-TN3-T TIP41C TIP42CL TIP42C-TA3-T TIP42C-TN3-R TIP42C-TN3-T hFE is transistor to220	PDF
2FK transistor Abstract: MMBT2907AK fairchild sot-23 Device Marking pc PNP Epitaxial Silicon Transistor sot-23 a/smd 2fk transistor Text: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units	Original	MMBT2907AK MMBT2907AK OT-23 2FK transistor fairchild sot-23 Device Marking pc PNP Epitaxial Silicon Transistor sot-23 a/smd 2fk transistor	PDF

D42DG Abstract: BUD43D transistor 369D BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic	Original	BUD42D BUD42D BUD42D/D D42DG BUD43D transistor 369D BUD42DT4 MPF930 MTP8P10 MUR105	PDF
Untitled Abstract: No abstract text available Text: MMBTSB1198KLT1 PNP Silicon Epitaxial Planar Transistor Low-frequency Transistor -80V, -0.5A The transistor is subdivided into two groups Q and R, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 oC) Symbol Value	Original	MMBTSB1198KLT1 OT-23 -50mA 100MHz	PDF
2sc4346 Abstract: 2SC4346-Z Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4346,4346-Z NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING ORDERING INFORMATION DESCRIPTION The 2SC4346 is a mold power transistor developed for PART NUMBER PACKAGE 2SC4346 TO-251 MP-3	Original	2SC4346 4346-Z 2SC4346 O-251 2SC4346-Z O-252 2SC4346-Z	PDF
2tk transistor Abstract: No abstract text available Text: MMBT4403K PNP Epitaxial Silicon Transistor MMBT4403K PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2TK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO	Original	MMBT4403K MMBT4403K OT-23 2tk transistor	PDF
Untitled Abstract: No abstract text available Text: MMBTSB1198KLT1 PNP Silicon Epitaxial Planar Transistor Low-frequency Transistor -80V, -0.5A The transistor is subdivided into two groups Q and R, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 oC) Symbol Value	Original	MMBTSB1198KLT1 OT-23 -50mA 100MHz	PDF
d1708 Abstract: 2SC4346 2SC4346-Z NEC PART NUMBER MARKING Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4346,4346-Z NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING ORDERING INFORMATION DESCRIPTION The 2SC4346 is a mold power transistor developed for PART NUMBER PACKAGE 2SC4346 TO-251 MP-3	Original	2SC4346 4346-Z 2SC4346 O-251 2SC4346-Z O-252 d1708 2SC4346-Z NEC PART NUMBER MARKING	PDF
mcl610 Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601 Text: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR	OCR Scan	MCT210 MCT26 MCT66 MCL600 MCL610 MCT81 MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601	PDF
MCT8 opto Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35 Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR	OCR Scan	MCT210 MCT26 MCT66 C1255 10TT1. MCT8 opto c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35	PDF
97CC Abstract: transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18 Text: ESM 18 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE High current fast switching transistor Transistor de commutation rapide fort courant V CEO 100 V Amplification BF ou H F grands signaux •c 25 A Thermal fatigue inspection	OCR Scan	CB-19 97CC transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18	PDF
BSY59 Abstract: TRANSISTOR W 59 Text: BSY59 Not for new developm ent PNP Transistor for switching applications The transistor B S Y 59 is an epitaxial silicon planar PNP transistor in a plastic case 11 A 3 DIN 41869 SO T-25 . The transistor is especially designed for use as switch of medium speed as well as for universal application.	OCR Scan	BSY59 BSY59 -S157 TRANSISTOR W 59	PDF

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TRANSISTOR 25 Search Results

TRANSISTOR 25 Result Highlights (5)

TRANSISTOR 25 Datasheets Context Search

MN1280

Untitled

369D

Untitled

Untitled

369D

Untitled

2SB1412

2FK transistor

Untitled

SOT-23 2xk

d1708

TIP41C

2FK transistor

D42DG

Untitled

2sc4346

2tk transistor

Untitled

d1708

mcl610

MCT8 opto

97CC

BSY59